65results about How to "High graphic precision" patented technology

The invention discloses a microwave film resistor and a manufacturing method thereof, and belongs to the field of circuit elements. The microwave film resistor comprises a ceramic substrate, a film resistance layer which is adhered to the upper surface of the ceramic substrate and an electrode layer which is adhered to the film resistance layer. The film resistor has the advantages of high precision, high using frequency and high resistance stability. In addition, the invention also discloses a microwave film resistor network module and a manufacturing method thereof, wherein the microwave film resistor network module is formed by integrating three or more microwave film resistors on one module.

The invention discloses a K/Ka dual-band common-aperture antenna array, aiming to provide an antenna array surface capable of reducing the antenna profile, covering K and Ka bands and sharing a dual-band aperture. The invention is implemented by the following technical schemes: K-band patches are distributed on a dielectric substrate in the form of a uniform rectangular array, Ka-band patches areinterspersed in the center of the interval of adjacent K-band patches in an interpolation manner, the K-band patches are in orthogonal connection with a bonding pad located on the bottom surface of the dielectric substrate through a feeder pillar that penetrates through the dielectric substrate, the bonding pad is connected with a coaxial feeder, and the coaxial feeder penetrates through a metal base plate to connect with the bonding pad and feeds in a touch-type connection manner, wherein the K-band patches are combined with the metal base plate through the feeder pillar to form a K-band antenna array surface, the feeder pillar is connected with the coaxial feeder through the bonding pad to form a K-band channel; and the Ka-band patches are combined with the metal base plate through the feeder pillar to form a Ka-band antenna array surface, and the feeder pillar and the bonding pad conduct the coaxial feeder to form a Ka-band channel.

The invention discloses magnetic ink, and relates to an electronic material technology. The magnetic ink comprises a solvent and a solute, wherein the solvent consists of ethanol, isopropanol and deionized water in a volume ratio of A: B: C, wherein A is more than or equal to 1 and less than or equal to 4, B is more than or equal to 1 and less than or equal to 3, and C is more than or equal to 6 and less than or equal to 12; the solute comprises nano magnetic granules, dispersant, connecting agent, surfactant, wetting agent and defoaming agent; the mass ratio of the nano magnetic granules to the dispersant is x: y, wherein x is more than or equal to 4 and less than or equal to 25, and y is more than or equal to 1 and less than or equal to 3; the ratio of the solvent: the connecting agent: the surfactant: the wetting agent: the defoaming agent is a: b: c: d: e, wherein a is more than or equal to 86.95 and less than or equal to 99.199, b is more than or equal to 0.3 and less than or equal to 5, c is more than or equal to 0.5 and less than or equal to 5, d is more than or equal to 0 and less than or equal to 3, and e is more than or equal to 0.001 and less than or equal to 0.05; and the ratio of the mass of the nano magnetic granules to the volume of the solvent is 0.002 to 0.02 gram per milliliter. The method realizes low-cost production of the large-area electromagnetic wave absorption film and preparation of flexible wave absorption films with high output graph precision, clear graph boundary, uniform distribution and various complex components and images.

The present invention provides a plate burning process of a precise screen. The process employs a way of secondary exposure way to complete the film graphic transfer to the screen, and specifically comprises steps of: A) film production: first compensating the film, then adding composing and positioning to ensure a composing position deviation no more than 100 mum in a secondary plate burning of the screen; B) plate burning: carrying out composing and plate burning according to composing position required by printing, wherein the first plate burning energy set value is a minimum value of the exposure latitude, and the secondary plate burning energy value is set at a peak value of the optimum exposure. The method of the invention employs a parallel light plate burning machine to achieve clear text and effectively control edge jag and side virtual exposure; meanwhile, as the screen is treated with exposure for two times, the exposure energy is sufficient, and the pressrun of the screen film is improved.

The invention discloses a three-dimensional ceramic substrate comprising a cavity structure. The three-dimensional ceramic substrate comprises a planar ceramic substrate and the cavity structure attached onto the planar ceramic substrate. The invention also discloses a fabrication method of the three-dimensional ceramic substrate. The fabrication method comprises the steps of firstly, fabricating the planar ceramic substrate with a surface comprising a metal circuit, designing and fabricating a die according to the cavity structure and the size requirement, and fabricating low-temperature cured ceramic paste; secondly, combining the die after the planar ceramic substrate and a plastic die are aligned, and uniformly filling the ceramic paste in a die cavity by modes such as mechanical vibration, pressure injection or vacuum pumping; and finally, allowing to stand for 15-60 minutes under a room temperature or a low temperature (lower than 100 DEG C), and removing the die after the paste is cured. The three-dimensional ceramic substrate has good thermal resistance, corrosion resistance and sealing performance; and the fabrication method of the three-dimensional ceramic substrate has the advantages of low material cost, simple process and high pattern accuracy, particularly, the ceramic paste can be cured under the room temperature or the temperature lower than 100 DEG C, and the hermetical package demands of white-light LED, ultraviolet-light LED and other electrical devices are satisfied.

The invention discloses a zinc oxide film imaging method comprising the following steps of firstly, cleaning a substrate, photoetching and developing to obtain an imaged photoresist; secondly, placing the substrate into a vacuum chamber to deposit a ZnO film with the thickness of 100-200nm; finally, ultrasonically stripping the substrate in an organic solvent to obtain an imaged zinc oxide film. The zinc oxide film imaging method is simple in process; the imaged zinc oxide film is high in image precision, favorable in dielectric property and good in application prospect and has favorable conductivity and light transparency.

The invention provides an integrated photoelectric receiving module containing a low noise amplifier and a production process thereof. The module adopts the design of a hybrid integration structure ofa high-speed photodiode die and a low noise amplifier chip; compared with a split structure, the structure has the advantages that the size is reduced, the radio frequency performance is improved andthe reliability is improved. The hybrid integration process is a common-substrate micro-assembly process and the high-speed photodiode die, the low noise amplifier chip and micro-strip lines are aligned, bonded and baked at a time through an epoxy silver glue process, and the process is simple, the process time is reduced and the process efficiency is high; a hybrid integration circuit substrateis made of AlN substrate material with good surface finish and high thermal conductivity; the hybrid integration circuit substrate adopts a thin film circuit process and a gold wire wedge welding process is utilized for welding, so that the influence of parasitic inductance is effectively reduced and the requirement of high-speed module packaging is better satisfied; the whole packaging structureis simple and practical in design, is high in process production feasibility and is suitable for batch production.

The invention relates to a method for preparing field emission display anode panel fluorescent powder coating, which comprises the following steps: selecting photosensitive fluorescent powder; adding hydroxyl dimethyl siloxane as a foam killer; taking Texanol alcohol as a solvent; adding acrylic resin and an activator which takes a pyrolysis type initiator as the primary ingredient; applying to anode baseplate glass in a printing manner; subjecting the baseplate glass on which photosensitive paint is printed to drying and baking to enable the coating layer to solidify as a film; exposing with ultraviolet light, and developing; after developing, carrying out solidification treatment; and after cleaning, blow-drying with nitrogen. When being applied to the screen printing coating technology, the invention can produce an anode fluorescent powder coating with clear images; the accuracy of the produced images is high; the manufacture process is simple; and the paint has a low cost. The invention combines the screen printing technology and the developing technology, and achieves the effects of saving time and improving the display resolution when being applied to the technology for manufacturing a field emission display.

Provided in the invention is a method for utilizing ultraviolet oxidation in implementing and regulating graphene film patterning, comprising: a step 1: utilizing a xenon lamp excimer ultraviolet oxidation method and a hard mask in implementing graphene film microstructure graphic patterning; a step 2: by applying a nonuniform magnetic field in the perpendicular direction to the surface of a graphene film, controlling oxygen excitons to move in the direction of the magnetic field towards the graphene film, thus enhancing the directionality of etching the graphene film in the perpendicular direction, and increasing the quality of graphene film microstructure patterning; and a step 3: by adjusting the strength and direction of the magnetic field (such as in the horizontal direction), controlling the directionality of the movement of the oxygen excitons, and regulating the shape being etched on the graphene film graphic structure, thus achieving the goal of regulating graphene film patterning. The method of the invention implements and regulates a micrometer graphic structure array, is suitable for large-area graphene film patterning, free of photoresist contamination, and inexpensive, and provides a patterned graphene film of high quality.

The invention provides a memory and a forming method thereof. A bit line and an insulating line are used for defining a first grid array, after the bit lines and the insulating lines are formed, the isolation layer is used for further defining the second lattice array corresponding to the first lattice array, so that the first lattice array and the second lattice array can be combined to define the node contact window, and then the node contact structure can be filled in the node contact window in a self-aligned mode. Therefore, according to the memory and the forming method thereof, when a node contact structure is prepared, a graphical process does not need to be executed on a conductive material used for forming the node contact structure, thus, the etching process in the patterning process of the conductive material with high hardness can be omitted, the pattern precision of the formed node contact structure can be improved, polymers can be prevented from being generated, and the polymers are prevented from being attached to the node contact structure.

The invention discloses a method for preparing a grating with a submicron structure, which belongs to the technical field of microstructures in semiconductors, and particularly comprises the followingsteps of: spin-coating an electron beam resist on a silicon wafer, and performing electron beam exposure to obtain an electron beam resist layer; performing dry etching by taking the electron beam resist layer as a mask to prepare a nanoimprint template; transferring the submicron structure on the nanoimprint template to a thermocuring transparent soft film; spin-coating an ultraviolet curing imprinting adhesive on the substrate for preparing the grating; transferring the submicron structure on the thermocuring transparent soft film to an ultraviolet curing imprinting adhesive through a nanoimprinting method; and transferring the submicron pattern on the ultraviolet curing impressing adhesive to a substrate for preparing the grating by using a dry etching method. The nanoimprint templateprepared through electron beam exposure and dry etching is high in pattern precision and smooth in surface. The sub-micron structure grating prepared through soft film transfer printing, nanoimprint lithography and dry etching is good in uniformity, high in yield, accurate in size and low in cost.

PURPOSE: A manufacturing method of a gray tone mask is provided to improve preciseness with a simplified imaging process, and thus to ensure the quality of the resulted product, while reducing imaging processing time, through only single number of imaging process, thereby being suitably used in TFT-LCD. CONSTITUTION: The manufacturing method of a gray tone mask comprised of a light shield part, projection part, a transmission part and a semi-transmission part comprises: preparing a mask blank where at least a semi-transmission film(22) and a light shield part(23) are formed in this order on a transparent substrate(21); forming a resist film(24) on the mask blank; light exposing the resist film in order to expose patterns that are below the resolution limit of a light exposure device to the part forming the semi-transmission part of the resist film; developing the resist film and forming resist patterns(24a) in a way that the residual film values become different between the part forming the light shield part and the part forming the semi-transmission part; etching the light shield film(23a) and semi-transmission film with the resist patterns as a mask to form the transmission part; removing only resist patterns present on the semi-transmission part; and etching a part of the light shield film and the semi-transmission film with the residual resist patterns as a mask to form the semi-transmission part(22a).

The invention discloses an exposure development method for a circuit board and solves problems of deficient exposure, poor graph precision and poor graph uniformity existing during groove bottom graph exposure in the prior art. The method comprises steps that, a circuit board having a step groove is provided; a pad is made, the size of the pad is in matching with the step groove, and the pad is provided with a hollowed-out graph identical to a design graph of the bottom of the step groove; the circuit board is coated with a photosensitive material, and the photosensitive material covers the bottom of the step groove; the pad is arranged in the step groove, exposure of the circuit board is carried out, and exposure of the photosensitive material coated at the bottom of the step groove is realized through the hollowed-out graph; the pad is taken out, development of the photosensitive material on the circuit board is carried out, and the required graph is formed on the circuit board.

The invention provides a positioning nanoimprint lithography system for preparation of a patterned substrate by utilizing an AFM (Atomic Force Microscope) probe. The positioning nanoimprint lithography system comprises an ultrahigh vacuum chamber compatible with other vacuum growth equipment, an AFM fixed at the bottom of the ultrahigh vacuum chamber, a substrate holder fixing device fixed on the AFM, a substrate holder positioned in a hole formed in the middle of the substrate holder fixing device, a mechanical arm fixed on the ultrahigh vacuum chamber and used for transmitting of the substrate holder, a probe replacement cavity fixed in the side wall of the ultrahigh vacuum chamber and used for replacement of the probe of the AFM, and a monitoring system used for control to the preparation of the imprinted patterned substrate by the AFM. The positioning nanoimprint lithography system has the characteristics of high patterned substrate precision (more than 50 nm), small extension damage, capability of facilitating preparation of high-integration-level arrays of photoelectronic devices and the like.

The invention discloses a mask layout correction method and a mask layout. The method comprises the steps that a first mask layout which comprises a plurality of first patterns extending along a first direction is formed; second mask layout information is obtained, the second mask layout information comprises a second mask layout, the second mask layout comprises a plurality of second patterns extending in the second direction, and after the first mask layout and the second mask layout are overlapped, the second patterns stretch across one or more first patterns, the second direction is perpendicular to the first direction; and the plurality of first patterns are compensated and corrected according to the layout information of the second mask. Therefore, the performance of the semiconductor structure is improved.

Aiming at the technical problem that aqueous solution of HF, serving as etching solution, cannot etch a bismuth-based thin film material, nor ensure the accuracy of patterns, the invention provides etching solution for use in the wet etching of bismuth-based thin films, belongs to the technical field of materials and relates to micro machining technology, in particular to etching solution for use in a photoetching process. The etching solution is mixed solution comprising HF serving as an etching agent, NH4F serving as a complexing agent and H2O serving as a diluting agent in a molar ratio of 1: (0.5-1.5): (1.26-5.5). To enhance the etching effect of the etching solution on the bismuth-based thin film material and increase etching speed, HNO3 serving as an assistant can be added into the etching solution, wherein the ratio of the HF to the NH4F to the HNO3 to the H2O is 1: (0.5-1.5): (0.36-1.6): (1.26-5.5). The wet etching of the bismuth-based thin film material by the etching solution has the advantages of clean etched surface, clear patterns, high precision and no residual precipitate. After the HNO3 assistant is added, the speed of the wet etching of the bismuth-based thin films is increased, and the etching process and the pattern precision can be controlled effectively.

The invention relates to a silicone carbide friction pair used for a non-contact mechanical seal and a manufacturing method of the silicon carbide friction pair. Concave points or geometry-shaped grooves are evenly distributed in the friction end face of the silicon carbide friction pair used for the mechanical seal, and the depth of the groove can be evenly changed gradually. The concave points or the geometry-shaped grooves evenly distributed in the friction end face of the silicon carbide friction pair are manufactured through laser processing.

The invention discloses a semiconductor structure and a forming method of the semiconductor structure. The method comprises the following steps that a substrate is provided; a plurality of separated fork-shaped structures are formed on the substrate, a first opening is formed between every two adjacent fork-shaped structures, each fork-shaped structure comprises a fin part structure located on the surface of the substrate, a composite nanosheet structure located on the fin part structure, and a second opening penetrating through the composite nanosheet structure, the second opening extends into the fin part structure, and the depth of the second opening is lower than that of the first opening; and an isolation structure is formed in the second openings. Therefore, the performance of the semiconductor structure is improved.