Wet method pattern technology of chrome-nickel alloy thin film

A nickel-chromium alloy and patterning technology, which is applied in the direction of removing conductive materials by chemical/electrolytic methods, can solve problems affecting device quality, photoresist carbonization, and high temperature resistance, and achieve high pattern accuracy.

Inactive Publication Date: 2007-02-28
KUNMING INST OF PHYSICS
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its disadvantages are obvious. Dry etching must be done with an expensive etching machine. The price of this etching machine is more than hundreds of thousands of yuan. The etching is achieved by bombarding the surface of the silicon wafer to be etched by particles such as ions
As a result, it is inevitable that the temperature on the surface of the silicon wafer will rise, and the photoresist used for protection is an organic substance that is not resistant to high temperatures. As a result, the photoresist is carbonized, making it difficult to remove the photoresist in subsequent processes. Clean, and eventually pollute the surface of the nickel-chromium upper electrode, which will bring difficulties to the next process and affect the quality of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wet method pattern technology of chrome-nickel alloy thin film
  • Wet method pattern technology of chrome-nickel alloy thin film
  • Wet method pattern technology of chrome-nickel alloy thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0016] Potassium permanganate 2%, cerium sulfate 50%, hydrochloric acid 11%, ammonium chloride 8%, distilled water.

Embodiment 3

[0018] Potassium permanganate 6%, cerium sulfate 40%, hydrochloric acid 7%, ammonium chloride 10%, distilled water.

[0019] The above three examples represent the prepared corrosive solutions, all of which can meet the requirements of the present invention, and can produce qualified nickel-chromium alloy thin film patterned products, and other examples within the range of proportions will not be listed one by one.

[0020] In process B, examples of the temperature of the corrosive liquid in the beaker are kept at 40°C, 45°C, 50°C, 60°C, 70°C, 80°C, and 90°C, all of which can meet the needs of the present invention and can produce qualified nickel-chromium Alloy thin film patterned products.

[0021] With reference to Fig. 2, the nickel-chromium alloy film corrosion system of the present invention is made up of: corrosion solution 1, water bath 2, warm water 3, the silicon wafer 4 that has nickel-chromium alloy film long, beaker 5, electric furnace 6.

[0022] Potassium perma...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses the nickel-chromium thin film liquid graphic-arts technique. The technology comprises 2-10% kalii permangana, 30-505 cerous sulfate, 5-11% chlorhydric acid, 5-10% ammoniation ammonia and distilled water. The technology has the advantages of low cost, clear line and high accuracy.

Description

1. Technical field [0001] The invention relates to a patterning technology for realizing nickel-chromium alloy thin film materials, which is mainly applicable to the wet patterning of nickel-chromium alloy thin films on upper electrodes in infrared detectors, and can also be used for wet patterning of other nickel-chromium alloy thin films . 2. Background technology [0002] In infrared detectors, the patterning technology of nickel-chromium alloy upper electrode film is one of the key technologies in the fields of optoelectronics and VLSI. Infrared detectors based on ferroelectric thin films are processed by wet patterning of nickel-chromium upper electrodes, which occupies a very important position in the entire preparation process of ferroelectric thin film focal plane detectors. For a long time, the micro-patterning technology of this kind of functional thin film mainly adopts techniques such as dry or wet etching, physical lift-off, laser heating scanning and screen pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/02C23F1/30H05K3/06
Inventor 杨明珠普朝光李振豪杨培志
Owner KUNMING INST OF PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products