Etching solution for use in wet etching of bismuth-based thin films

A wet etching and etching solution technology, applied in the field of materials, can solve problems such as difficulty in etching bismuth-based thin film materials, inability to guarantee pattern accuracy, etc., and achieve the effect of effective control of pattern precision, clear pattern and clean surface

Inactive Publication Date: 2010-05-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] The invention aims at the technical problem that it is difficult to etch the bismuth-based thin film material by using HF aqueous soluti...

Method used

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  • Etching solution for use in wet etching of bismuth-based thin films
  • Etching solution for use in wet etching of bismuth-based thin films
  • Etching solution for use in wet etching of bismuth-based thin films

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Embodiment Construction

[0034] The chemicals used in this method include but are not limited to the following raw materials: concentrated hydrofluoric acid (analytical pure, ≥40%), concentrated nitric acid (analytical pure, 65~68%), ammonium fluoride crystals (analytical pure, ≥98%), Deionized water.

[0035] 1) First weigh an appropriate amount of HF (analytical pure) solution with a plastic measuring cylinder and pour it into a plastic beaker, then weigh the required amount of deionized water in the formula and pour it into the beaker together. Stir the solution well with a plastic stick.

[0036] 2) Weigh NH with an electronic balance 4 F (analytical pure), the weighed NH4F is added in the HF aqueous solution, and it is fully dissolved.

[0037] 3) Weigh the required amount of nitric acid (concentration: 65-68%) with a glass calciner and add the prepared HF, NH 4 F aqueous solution.

[0038] 4) Putting the prepared substrate into the etching solution for etching.

[0039] The specific experim...

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Abstract

Aiming at the technical problem that aqueous solution of HF, serving as etching solution, cannot etch a bismuth-based thin film material, nor ensure the accuracy of patterns, the invention provides etching solution for use in the wet etching of bismuth-based thin films, belongs to the technical field of materials and relates to micro machining technology, in particular to etching solution for use in a photoetching process. The etching solution is mixed solution comprising HF serving as an etching agent, NH4F serving as a complexing agent and H2O serving as a diluting agent in a molar ratio of 1: (0.5-1.5): (1.26-5.5). To enhance the etching effect of the etching solution on the bismuth-based thin film material and increase etching speed, HNO3 serving as an assistant can be added into the etching solution, wherein the ratio of the HF to the NH4F to the HNO3 to the H2O is 1: (0.5-1.5): (0.36-1.6): (1.26-5.5). The wet etching of the bismuth-based thin film material by the etching solution has the advantages of clean etched surface, clear patterns, high precision and no residual precipitate. After the HNO3 assistant is added, the speed of the wet etching of the bismuth-based thin films is increased, and the etching process and the pattern precision can be controlled effectively.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a microfabrication technology, that is, an etching solution in a photolithography process, and specifically refers to an etching solution for patterning a bismuth-based thin film material by a chemical wet etching method. Background technique [0002] Microwave dielectric tunable materials are widely used in microwave voltage-controlled devices. Currently, the materials used in the microwave tunable field are mainly barium strontium titanate Ba 1-x Sr0 x TiO 3 (BST) film material. Recently discovered bismuth-based structural materials such as: zinc bismuth niobate Bi 1.5 Zn 1.0 Nb 1.5 o 7 (BZN), and magnesium bismuth niobate Bi 1.5 MgNb 1.5 o 7 (BMN) has dielectric tunable properties, moderate dielectric constant, and very low dielectric loss. These characteristics make it a promising microwave dielectric tunable material. However, it is found in the microfabrication pr...

Claims

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Application Information

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IPC IPC(8): C09K13/08
Inventor 蒋书文高莉彬李言荣李汝冠
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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