Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing grey mask

A technology of gray-tone mask and manufacturing method, which is applied in the photoengraving process of the pattern surface, the manufacture of semiconductor/solid-state devices, the original for opto-mechanical processing, etc. Calibrate offsets, reduce time, ensure quality results

Inactive Publication Date: 2005-02-09
HOYA CORP
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, even with this method, although there is a difference in the degree of offset compared to the previous method, it cannot solve the problem of graphic offset

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing grey mask
  • Method for producing grey mask
  • Method for producing grey mask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Hereinafter, embodiments of the present invention will be described in detail.

[0038] figure 1 This is a schematic cross-sectional view showing the first embodiment of the method for producing a gray-tone mask of the present invention, and showing the production steps in the order of the steps.

[0039] The mask blanks used in this embodiment are as figure 1 As shown in (a), a semi-transparent film 22 and a light-shielding film 23 are sequentially formed on a transparent substrate 21 such as quartz. Here, as the material of the light-shielding film 23, a thin film and a material capable of obtaining high light-shielding properties are preferable, and examples thereof include Cr, Si, W, Al, and the like. In addition, as the material of the semi-transparent film 22, a thin film is preferable and a semi-transmissive material having a transmittance of about 50% is obtained when the transmittance of the light-shielding portion is 0%. oxides, nitrides, oxynitrides, flu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

PURPOSE: A manufacturing method of a gray tone mask is provided to improve preciseness with a simplified imaging process, and thus to ensure the quality of the resulted product, while reducing imaging processing time, through only single number of imaging process, thereby being suitably used in TFT-LCD. CONSTITUTION: The manufacturing method of a gray tone mask comprised of a light shield part, projection part, a transmission part and a semi-transmission part comprises: preparing a mask blank where at least a semi-transmission film(22) and a light shield part(23) are formed in this order on a transparent substrate(21); forming a resist film(24) on the mask blank; light exposing the resist film in order to expose patterns that are below the resolution limit of a light exposure device to the part forming the semi-transmission part of the resist film; developing the resist film and forming resist patterns(24a) in a way that the residual film values become different between the part forming the light shield part and the part forming the semi-transmission part; etching the light shield film(23a) and semi-transmission film with the resist patterns as a mask to form the transmission part; removing only resist patterns present on the semi-transmission part; and etching a part of the light shield film and the semi-transmission film with the residual resist patterns as a mask to form the semi-transmission part(22a).

Description

technical field [0001] The present invention relates to a method of manufacturing a gray tone mask (graytone mask) suitable for manufacturing a thin film transistor liquid crystal display device (Thin Film Transistor Liquid Crystal Display: hereinafter referred to as TFT-LCD) and the like. Background technique [0002] Compared with CRT (cathode ray tube), TFT-LCD has the advantages of easy thinning and low power consumption, so commercialization is rapidly advancing at present. TFT-LCD has a TFT substrate in which TFTs are arranged in each pixel arranged in a matrix, and a schematic structure of a color filter in which red, green, and blue pixel patterns are superimposed and arranged corresponding to each pixel with a liquid crystal phase interposed therebetween. . In the TFT-LCD, the number of manufacturing steps is large, and 5 to 6 photomasks are required to be used only for the manufacture of the TFT substrate. [0003] Under such circumstances, a method of manufactur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/68G03F1/80G03F7/20H01L21/00H01L21/027
CPCG02F1/1335G03F1/32G03F1/34G03F1/50G03F1/54G03F1/80
Inventor 井村和久
Owner HOYA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com