8 results about "Exposure latitude" patented technology

To provide an onium salt for use in a chemically amplified resist composition that exhibits high solvent solubility, high sensitivity, and high contrast in photolithography using high-energy radiation, while also offering superior lithography properties such as exposure latitude (EL) and line width roughness (LWR); a chemically amplified resist composition comprising the onium salt as a photoacid generator; and a pattern forming process using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by formula (1).SELECTED DRAWING: None

The onium salt can be used for a chemically amplified resist composition. The resist composition exhibits a high sensitivity, high resolution, having improved lithography properties such as LWR of line patterns, CDU of hole patterns, exposure latitude (EL), and depth of focus (DOF), and capable of suppressing collapse of resist patterns in photolithography using high-energy radiation such as a far ultraviolet ray, EUV, or an electron beam (EB) independent of whether it is of positive or negative tone, and to provide a pattern forming process. The onium salt having the formula (1).

The invention relates to an onium salt, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing: a photolithographic film which has excellent solvent solubility, high sensitivity, and excellent photolithographic properties in optical lithography using high-energy rays; the present invention relates to an onium salt for use in a chemically amplified resist composition having excellent photolithography properties such as exposure latitude (EL) and LWR, having a high contrast, a chemically amplified resist composition containing the onium salt as a photoacid generator, and a method for forming a pattern using the chemically amplified resist composition. The onium salt is represented by the following formula (1).

The present invention provides a photosensitive composition that can form a film with excellent exposure latitude, good development residue, and excellent surface smoothness. [Solution] The above problem can be solved by a photosensitive composition comprising a colorant (A), a polymerizable compound (B), a polymerization initiator (C), and a thiol compound (D), wherein the thiol compound (D) comprises a thiol compound (D1) represented by the following chemical formula (1), or its dimer (D2). The total content of the thiol compound (D1) represented by the chemical formula (1) and its dimer (D2) is preferably 0.05 to 5% by mass of the nonvolatile content of the photosensitive composition. Chemical formula (1) JPEG2026103014000070.jpg2354

The purpose of the present invention is to provide: a radiation-sensitive composition from which it is possible to obtain a resist film that can exhibit, at sufficient levels, sensitivity, CDU, pattern circularity, pattern rectangularity, exposure latitude, and depth of focus; a pattern-forming method; and a compound. This radiation-sensitive composition includes: a polymer (A) including a structure unit (I) having a phenolic hydroxyl group; a compound (C) represented by formula (1); a crosslinking agent (Q); and a solvent (E). (In said formula (1), R1 represents a monovalent organic group having 1-40 carbon atoms (excluding a group including an aromatic hydrocarbon). R21 and R22 each independently represent a monovalent organic group having 1-40 carbon atoms. R23 and R24 each independently represent a monovalent organic group having 1-40 carbon atoms, or R23 and R24 are combined with each other to form, together with a nitrogen atom which is bonded thereto, a cyclic structure having 3-10 ring members.)

The sulfonium salt monomer used for a chemically amplified resist composition has excellent solvent solubility, high sensitivity, and high contrast, and excellent lithography performance such as exposure latitude (EL), LWR, CDU, and depth of focus (DOF), particularly in photolithography using high-energy radiation such as KrF excimer laser light, ArF excimer laser light, an electron beam (EB), and EUV. The sulfonium salt monomer having the formula (A).

This invention discloses a photoresist and its preparation and photolithography methods. The photoresist comprises phenolic resin, a photosensitizer, a solvent, and additives. The solvent includes propylene glycol methyl ether, propylene glycol methyl ether acetate, low-boiling-point alcohol solvents, and aliphatic alkane solvents. In this invention, the photoresist uses a quaternary solvent system (PGME / PGMEA / alcohol / alkane), which establishes a rapid evaporation channel through the alcohol and alkane, enabling rapid solvent evaporation and low residue control during low-temperature baking, thus ensuring photosensitivity stability. The introduction of volatile alcohol solvents significantly reduces solvent residue after low-temperature baking, eliminating the influence of residual solvent on the quantum efficiency of the photosensitizer, resulting in a more stable exposure energy window and an exposure latitude (EL) controlled above 25%.

The present invention addresses the problem of providing a resist composition capable of forming a resist pattern with which sufficient resolution and exposure latitude can be obtained. The present invention also addresses the problem of providing: a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article. The present invention relates to: a resist composition containing a resin (A1) containing a structural unit having an acid-labile group, a photosensitizer (I), and an acid generator (B), the acid generator (B) containing a compound having a maximum molar absorption coefficient of 6000 (L / (mol.cm)) or less in the wavelength range of 355-375 nm; the content of the photosensitizer (I) is 10% by mass or less in the solid content of the resist composition, and when a film is formed using the resist composition with a film thickness, the minimum transmittance of the film for radiation in the wavelength range of 355-375 nm is 23% or more.