16 results about "Exposure latitude" patented technology

To provide an onium salt for use in a chemically amplified resist composition that exhibits high solvent solubility, high sensitivity, and high contrast in photolithography using high-energy radiation, while also offering superior lithography properties such as exposure latitude (EL) and line width roughness (LWR); a chemically amplified resist composition comprising the onium salt as a photoacid generator; and a pattern forming process using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by formula (1).SELECTED DRAWING: None

The purpose of the present invention is to provide: a radiation-sensitive composition from which it is possible to form a resist film that can exhibit, at sufficient levels, sensitivity, exposure latitude, depth of focus, pattern rectangularity, storage stability, development defect performance, and dry-etching resistance; and a pattern formation method. This radiation-sensitive composition comprises: a polymer (A) having a structural unit (I) that has a phenolic hydroxyl group and a structural unit (II) represented by formula (2); a compound (B) represented by formula (1); a crosslinking agent (Q); and a solvent (E). (In formula (1), R11, R14, R15, and R18 each independently represent a hydrogen atom or a monovalent organic group having 1-40 carbon atoms. R12 and R13 each independently represent a hydrogen atom or a monovalent organic group having 1-40 carbon atoms, or R12 and R13 are bonded together and form, together with a carbon atom bonded thereto, an alicyclic structure having 3-10 carbon atoms. R16 and R17 each independently represent a hydrogen atom or a monovalent organic group having 1-40 carbon atoms, or R16 and R17 are bonded together and form, together with a carbon atom bonded thereto, an alicyclic structure having 3-10 carbon atoms. R21 represents a halogen atom, a cyano group, a nitro group, a hydroxy group, or a monovalent organic group having 1-40 carbon atoms. When R21 exists in a quantity of more than one, such R21s are identical to each other or are different from each other. n represents an integer of 1-5. p represents 0 or 1. R22 represents a monovalent organic group having 1-40 carbon atoms. X represents -O-, -S-, -SO2-, or -CO-.) (In formula (2), RA1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. n1 represents an integer of 0-5. X1 represents a halogen atom, a cyano group, a nitro group, an alkyl group, a carboxy group, or a fluorinated alkyl group. When X1 exists in a quantity of more than one, such X1s are identical to each other or are different from each other.)

The present invention relates to a sulfonium salt compound, a photoacid generator, and a resist composition, the sulfonium salt compound having a structure represented by general formula (1): # imgabs0 # wherein R1, R2, and R3 each independently represent a hydrocarbon group having 1 to 20 carbon atoms and containing a hydrogen atom or a heteroatom, R4 represents a hydrocarbon group having 1 to 20 carbon atoms and containing a hydrogen atom or a heteroatom, and n represents an integer of 1 to 5. When the sulfonium salt compound with the structure is used as a photoacid generator to be applied to a resist composition, the substituted adamantane structure has a relatively large steric effect, so that the acid diffusion length can be effectively reduced, pattern defects are reduced, and the yield of the resist composition is improved. The photolithography properties such as sensitivity, exposure latitude (EL), line width roughness (LWR), mask error factor (MEF), defect density and the like of the resist composition are effectively improved.

The onium salt can be used for a chemically amplified resist composition. The resist composition exhibits a high sensitivity, high resolution, having improved lithography properties such as LWR of line patterns, CDU of hole patterns, exposure latitude (EL), and depth of focus (DOF), and capable of suppressing collapse of resist patterns in photolithography using high-energy radiation such as a far ultraviolet ray, EUV, or an electron beam (EB) independent of whether it is of positive or negative tone, and to provide a pattern forming process. The onium salt having the formula (1).

The invention relates to an onium salt, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing: a photolithographic film which has excellent solvent solubility, high sensitivity, and excellent photolithographic properties in optical lithography using high-energy rays; the present invention relates to an onium salt for use in a chemically amplified resist composition having excellent photolithography properties such as exposure latitude (EL) and LWR, having a high contrast, a chemically amplified resist composition containing the onium salt as a photoacid generator, and a method for forming a pattern using the chemically amplified resist composition. The onium salt is represented by the following formula (1).

The invention relates to an onium salt, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing: an onium salt which is used in a chemically amplified resist composition having excellent solvent solubility, high sensitivity, high contrast, and excellent lithography performance such as exposure latitude (EL) and LWR in optical lithography using high-energy rays; a chemically amplified resist composition containing the onium salt as a photoacid generator; and a pattern forming method using the chemically amplified resist composition. [Solution] An onium salt represented by formula (1). In the # imgabs0 # formula, one of R13 and R14 is a group having a partial structure represented by formula (1a). # imgabs1 #

An onium salt monomer consists of a sulfonic acid anion containing a polymerizable group and being free of iodine and a triarylsulfonium cation containing iodine and fluorine. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern with satisfactory exposure latitude, edge roughness, dimension uniformity and depth of focus when processed by photolithography using high-energy radiation, as well as collapse resistance.

An onium salt monomer consists of a fluorosulfonic acid anion containing an aromatic ring structure substituted with a polymerizable group and iodine and a triarylsulfonium cation containing iodine and fluorine. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern with satisfactory exposure latitude, edge roughness, dimension uniformity and depth of focus when processed by photolithography using high-energy radiation, as well as collapse resistance and etch resistance.

The present invention provides a photosensitive composition that can form a film with excellent exposure latitude, good development residue, and excellent surface smoothness. [Solution] The above problem can be solved by a photosensitive composition comprising a colorant (A), a polymerizable compound (B), a polymerization initiator (C), and a thiol compound (D), wherein the thiol compound (D) comprises a thiol compound (D1) represented by the following chemical formula (1), or its dimer (D2). The total content of the thiol compound (D1) represented by the chemical formula (1) and its dimer (D2) is preferably 0.05 to 5% by mass of the nonvolatile content of the photosensitive composition. Chemical formula (1) JPEG2026103014000070.jpg2354

Certain aspects relate to a method for improving a lithography configuration. In a lithography configuration, a source illuminates a mask to expose resist on a wafer. A processor determines a defect-based focused exposure window (FEW). The defect-based FEW is a region of depth of focus and exposure latitude for the lithography configuration with an acceptable defect level on the wafer. The defect-based FEW is determined based on a predicted probability distribution of defects occurring on the wafer. The processor also determines a critical dimension (CD)-based FEW. The CD-based FEW is a region of depth of focus and exposure latitude for the lithography configuration with an acceptable level of CD variation on the wafer. The CD-based FEW is determined based on a predicted CD on the wafer. The lithography configuration is modified based on increasing an overlap region between the defect-based FEW and the CD-based FEW.

The purpose of the present invention is to provide: a radiation-sensitive composition from which it is possible to obtain a resist film that can exhibit, at sufficient levels, sensitivity, CDU, pattern circularity, pattern rectangularity, exposure latitude, and depth of focus; a pattern-forming method; and a compound. This radiation-sensitive composition includes: a polymer (A) including a structure unit (I) having a phenolic hydroxyl group; a compound (C) represented by formula (1); a crosslinking agent (Q); and a solvent (E). (In said formula (1), R1 represents a monovalent organic group having 1-40 carbon atoms (excluding a group including an aromatic hydrocarbon). R21 and R22 each independently represent a monovalent organic group having 1-40 carbon atoms. R23 and R24 each independently represent a monovalent organic group having 1-40 carbon atoms, or R23 and R24 are combined with each other to form, together with a nitrogen atom which is bonded thereto, a cyclic structure having 3-10 ring members.)

To provide an onium salt used in a chemically amplified resist composition that has excellent solvent solubility, high sensitivity, and high contrast in photolithography using high-energy rays, and exhibits superior lithographic properties such as exposure latitude (EL) and LWR, a chemically amplified resist composition comprising the onium salt as a photoacid generator, and a patterning process using the chemically amplified resist composition.SOLUTION: An onium salt represented by formula (1). One of R13 and R14 is a group having a partial structure represented by formula (1a).SELECTED DRAWING: None

This invention relates to the field of photoresist technology, and in particular to a deep ultraviolet chemically amplified positive photoresist composition and a patterning method. The deep ultraviolet chemically amplified positive photoresist composition comprises the following components: a polymer, a phenyl-containing compound, a photoacid-generating agent, a nitrogen-containing compound, a surfactant, and a solvent; the polymer includes polymer A, which has a structure as shown in formula (I): where R1 is selected from any one of methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, cyclopentyl, and cyclohexyl; R2 is selected from any one of hydrogen, methyl, and ethyl; the molar percentage of structural unit x to structural unit y is 65–80 mol%: 20–35 mol%. This photoresist features a large photolithography process window, wide exposure tolerance, and large depth of focus. Photolithography on a high-reflectivity substrate without anti-reflective underlayer protection can obtain photoresist patterns with no standing waves, small CD fluctuations, and right-angled sidewalls.

The sulfonium salt monomer used for a chemically amplified resist composition has excellent solvent solubility, high sensitivity, and high contrast, and excellent lithography performance such as exposure latitude (EL), LWR, CDU, and depth of focus (DOF), particularly in photolithography using high-energy radiation such as KrF excimer laser light, ArF excimer laser light, an electron beam (EB), and EUV. The sulfonium salt monomer having the formula (A).

This invention discloses a photoresist and its preparation and photolithography methods. The photoresist comprises phenolic resin, a photosensitizer, a solvent, and additives. The solvent includes propylene glycol methyl ether, propylene glycol methyl ether acetate, low-boiling-point alcohol solvents, and aliphatic alkane solvents. In this invention, the photoresist uses a quaternary solvent system (PGME / PGMEA / alcohol / alkane), which establishes a rapid evaporation channel through the alcohol and alkane, enabling rapid solvent evaporation and low residue control during low-temperature baking, thus ensuring photosensitivity stability. The introduction of volatile alcohol solvents significantly reduces solvent residue after low-temperature baking, eliminating the influence of residual solvent on the quantum efficiency of the photosensitizer, resulting in a more stable exposure energy window and an exposure latitude (EL) controlled above 25%.

The present invention addresses the problem of providing a resist composition capable of forming a resist pattern with which sufficient resolution and exposure latitude can be obtained. The present invention also addresses the problem of providing: a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article. The present invention relates to: a resist composition containing a resin (A1) containing a structural unit having an acid-labile group, a photosensitizer (I), and an acid generator (B), the acid generator (B) containing a compound having a maximum molar absorption coefficient of 6000 (L / (mol.cm)) or less in the wavelength range of 355-375 nm; the content of the photosensitizer (I) is 10% by mass or less in the solid content of the resist composition, and when a film is formed using the resist composition with a film thickness, the minimum transmittance of the film for radiation in the wavelength range of 355-375 nm is 23% or more.