148results about How to "Control roughness" patented technology

An aspect of the present invention relates to a magnetic tape comprising, on one surface of a nonmagnetic support, a nonmagnetic layer containing a nonmagnetic powder and a binder, and thereon, a magnetic layer containing a ferromagnetic powder and a binder, wherein

• • the magnetic layer contains a nonmagnetic filler the average particle diameter φ of which satisfies relation (I) below with a thickness t of the magnetic layer:

1.0≦φ/t≦2.0  (I);

• • the thickness t of the magnetic layer ranges from 30 to 200 nm;
  • the nonmagnetic layer has a thickness ranging from 30 to 200 nm;
  • a composite elastic modulus as measured on a surface of the magnetic layer ranges from 6.0 to 8.0 GPa; and
  • a centerline average surface roughness Ra of the surface of the magnetic layer, as measured by an optical three-dimensional profilometer, ranges from 0.2 to 1.5 nm.

A diffusing film comprises a transparent resin in which scatterers are dispersed. The difference between the refractive index of the transparent resin and that of the scatterers is in the range of 0.04 to 1.5. The scatterers are flat particles having sizes of 0.1 to 50 mum.

A photoelectrochemical (PEC) etch is performed for chip shaping of a device comprised of a III-V semiconductor material, in order to extract light emitted into guided modes trapped in the III-V semiconductor material. The chip shaping involves varying an angle of incident light during the PEC etch to control an angle of the resulting sidewalls of the III-V semiconductor material. The sidewalls may be sloped as well as vertical, in order to scatter the guided modes out of the III-V semiconductor material rather than reflecting the guided modes back into the III-V semiconductor material. In addition to shaping the chip in order to extract light emitted into guided modes, the chip may be shaped to act as a lens, to focus its output light, or to direct its output light in a particular way.

A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes: pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon; and pressing a second polishing tape against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

An apparatus for treating a surface of a steal plate, sequentially comprising: a strip steel surface treatment unit (1) provided with a high-pressure ejection device (1-1) or a centrifugal throwing device (1-2), a strip steel surface cleaning unit (2), and a strip steel surface drying unit (3), one or both of the high-pressure ejection device and the centrifugal throwing device being arranged, and slurry, namely a mixture of solid abrasive and water, being sprayed onto the surface of the strip steel; and further comprising a slurry supply unit (4) and an abrasive filtering and recovery unit (5). Also disclosed is a method for treating a surface of a steal plate. In the treatment method, by spraying the solid mixed abrasive onto the surface of the strip steel, the surface roughness of the strip steel is controlled, and further, the oil, iron oxide scales and some dirty things on the surface of the strip steel can be cleared, thereby fully or partially replacing the smoothing process function.

A method of fabricating a turning mirror for an optical device includes the steps of depositing on a substrate, which defines a plane in which an optical signal propagates in a propagating direction, a photoresist layer sensitive to electrons and to UV radiation. The material in which the photoresist layer is formed, has a contrast not larger than 3. A first portion of the photoresist layer is exposed to an electron beam, wherein the electron dose of the electron beam exposure is varied within the first portion according to a selected pattern, and wherein the electron does to which a given region in the photoresist is exposed, depends on the resulting photoresist height in the given region after development. A second portion of the photoresist layer is exposed to UV radiation; the first and the second portions are overlapped at least in a third portion. The photoresist layer is developed so as to form in the third portion of the photoresist layer exposed to both electron beam and to UV radiation a first surface having an angle relative to the propagating direction. The substrate and the photoresist are etched so that a second angled surface is formed in the substrate in correspondence to the third portion. The second surface forms an angle with the propagating direction.

To provide a high-purity Yttria sintered bodies having a high strength, a low dielectric loss and high plasma corrosion resistance of halogen gas during wide range surface roughness (Ra).

Solution

An Yttria sintered body having a dielectric loss tan δ of 1×10⁻⁴ or less in the frequency range from 1 to 20 GHz, wherein the Yttria sintered body contains Yttria of 99.9% by mass or more, has a porosity of 1% or less and an average crystal grain size of 3 μm or less, and the cumulative frequency ratio calculated from the following formula (1) is 3 or less:

Cumulative frequency ratio=D90/D50   (1)

In the above-described formula (1), the meanings of the individual symbols are as follows:

D90: The crystal grain size (μm) at which the cumulative number of grains as calculated from the smaller grain size side is 90% in the grain size distribution of the crystal grains in terms of the number of grains.

D50: The crystal grain size (μm) at which the cumulative number of grains as calculated from the smaller grain size side is 50% in the grain size distribution of the crystal grains in terms of the number of grains.

The invention discloses steel with a stable oxide layer for a pretreatment-free high-strength container and a manufacture method of the steel disclosed by the invention. The steel disclosed by the invention comprises the following chemical components in percentage by weight: 0.01-0.03% of C, 0.05-0.25% of Si, 1.4-1.6% of Mn, less than or equal to 0.008% of S, less than or equal to 0.05% of P, 0.25-0.40% of Cu, 0.25-0.50% of Cr, 0.22-0.30% of Ni, 0.02-0.03% of Nb and the balance of iron and inevitable impurities. The manufacture method of the steel disclosed by the invention is carried out according to the general pure steel process and comprises the following steps of: desulfurizing molten iron, smelting via a converter, refining via an LF (ladle furnace), refining via an RH (Rockwell Hardness) furnace, heating plate blanks, performing hot continuous rolling, cooling back section and reeling. The practice proves that the steel disclosed by the invention has the advantages of good integral corrosion resistance and high strength; meanwhile, the steel disclosed by the invention can be directly used for coating in the process of manufacturing the container without the pre-treating non-environmentally friendly pretreatment processes of blasting sand and blasting shots and has no negative influence on the coating quality and the coating property; and an oxide iron layer and a coating system are closely combined, so that the steel is good in compatibility. The manufacture method of the steel disclosed by the invention is simple in process flows and low in production cost.

The invention relates to a processing method of high-pressure exterior cylinder component of million grade super critical steam turbine, especially to a processing method of S2099*P50 giant nonstandard trapezoidal thread. A processing method of giant nonstandard trapezoidal thread uses a numerically controlled machine to execute processing, which is carried out according to the following sequences: executing mathematics modeling to the screw thread type wire; using coarse and fine processing methods, determining suitable radius lathe cutters respectively adopted by the coarse and fine processing methods according to required processing wire and required surface accuracy and roughness concentration, and determining suitable deepness allowance of the line face after the coarse processing; determining the coarse processing lathe cutter center track area and the fine processing lathe cutter center track area, and modeling for the cutter center track boundary; determining spacing of every layer during processing and spacing of every cutter in a same layer according to the material to be cut, the selected cutter, machine performance and cutting position; programming the coarse and fine processing lathe cutter walking procedure; and executing the process according to the programmed procedure. The inventive processing method has high process efficiency and high machine precision.

A method of forming a dielectric film by an organic metal CVD method, comprising the step of supplying an organic metal compound into a treating container having a substrate to be treated held therein to form the dielectric film on the substrate, wherein the dielectric film forming step comprises the first step of depositing, in the treating container, the dielectric film under a first condition so set as to allow the residence time of the organic metal compound to extend to a first value, and the second step of further depositing, after the first step and in the treating container, the dielectric film under a second condition so set as to allow the residence time of the organic metal compound to extend to a second value smaller than the first value.

The object of the invention is a process for detecting latent flatness defects in a band product (2) applied under tensile load to an angular sector (A) of measuring roll (1) comprising a plurality of detection zones (4) spaced apart each comprising a transmission sensor (3), at each rotation, of a measurement signal having a value under load (i) which is compared, at each rotation, with a reference value, in order to assess, in each longitudinal zone of the band (2), information representative of the tensile load applied in this zone. According to the invention, two values in empty condition (i1, i2) of the signal transmitted by each sensor (3) are measured, respectively before and after the corresponding detection zone passes through the angular application sector (A) of the band and the reference value (i0) to which is compared, at each rotation, the value under load (i) of the signal transmitted by each sensor is obtained by combination of said values in empty condition, respectively preceding (i1) and subsequent (i2).

A method of preparing polyethylene glycerol film, which comprises the following procedures: firstly, mix polyethylene glycerol resin and addition agent to produce plasticized polyethylene glycerol resin; secondly, add the plasticized polyethylene glycerol resin produced in the procedure (1) to an extruding machine to smelt, and proceed flux extruding; the extruded flux is delivered into a extruding plate module head, a polyethylene glycerol film is extruded between the two module lips of the extruding plate module head, the gap between the module lips is controlled between 0.65 to 0.95mm during the process, at the same time control the temperature of the surface of the module lips lower by 20 to 55 DEG C. than the flux. The method provided in the invention can conveniently realize the surface decoration design and roughness of the PVB film, which doesn't need special assistance operation, and realize the control to the decoration design and roughness of the film.

Methods for controlling crystal size in bulk tungsten layers are disclosed herein. Methods for depositing a bulk tungsten metal layer can include positioning a substrate with a barrier layer in a processing chamber, forming a tungsten nucleation layer, post-treating the nucleation layer with one or more treatment gas cycles including an activating gas and a purging gas, heating the substrate to a deposition temperature, and depositing a bulk tungsten layer with alternating nitrogen flow on the nucleation layer. The post-treatment cycling can be applied optionally to the bulk metal deposition with alternating nitrogen flow.

The invention discloses an adaptive event trigger control method for a nonlinear uncertain system, which comprises the steps of firstly, for an input saturation phenomenon, adopting a smooth hyperbolic tangent function to approximate the saturation characteristic of system control input so as to avoid the phenomenon of unsmooth control input and facilitate the subsequent design; secondly, for an uncertain part of the system, improving the traditional Fuzzy Logic Systems (FLSs) to a certain extent, and taking the time-varying approximation error of an approximation system into consideration; finally, providing an event trigger control mechanism of a dynamic threshold for the bandwidth constraint existing in the actual system, wherein the trigger threshold changes along with the change of the control quantity at the last moment, so that more precise and flexible control can be realized, and the system bandwidth resources can be better saved on the basis of ensuring the control effect.

The invention provides a manufacturing method for AG panel display glass, belonging to the technical field of deep processing of glass. An automatic AG panel display glass production line is adopted in the invention. The manufacturing method comprises the following process flow: feeding; pickling; etching; turnover of panels; washing; thinning and polishing; washing and drying through sucking; and air drying. Through pickling, impurities adhered on the surface of a glass flake can be cleaned, so a clean glass surface is obtained for acid etching. Through corrosion of strong acid, honeycomb corrosion pits are formed in the surface of glass, so surface roughness of glass is improved. Chemical polishing is employed for fine processing control of the acid etched surface of the AG glass, and a DCS control system is used for realization of automatic operation of whole flow; thus, accurate control of technological parameters is realized, and product quality is improved.

A plasma display panel comprising first and second substrates positioned substantially parallel to each other, facing each other and separated from each other by a predetermined distance is disclosed. A plurality of address electrodes are formed on the first substrate. A first dielectric layer covers the address electrodes on the first substrate. A plurality of barrier ribs having predetermined heights are mounted on the first dielectric layer, creating discharge spaces between the first and second substrates. Phosphor layers are formed within the discharge spaces. A plurality of discharge sustain electrodes are formed on the second substrate and are positioned perpendicular to the address electrodes on the first substrate. A second dielectric layer is formed on the second substrate covering the discharge sustain electrodes. A MgO protection layer having a surface roughness (Rms) ranging from about 60 to about 250 {acute over (Å)} covers the second dielectric layer.