The application discloses a GaN HEMT high-precision
hybrid modeling method, first, the static characteristic data and dynamic
capacitance data of a GaN HEMT device are acquired through a
semiconductor parameter analyzer, and the
dynamic switching characteristic curve of the device is acquired through double-pulse testing; then, the static characteristics of the device are modeled based on ANN; further, based on the dynamic
capacitance test data, the input
capacitance C iss , output capacitance C oss and reverse transmission capacitance C
rss are converted to obtain C gs , C C gd and C ds , and the capacitances which change significantly with
voltage C gd and C ds are nonlinearly fitted in the form of
hyperbolic tangent function superposition, the dynamic capacitance model is realized in LT-spice by combining the
charge control relationship with a
behavior type voltage-controlled
current source; finally, the static conduction model and the dynamic capacitance model are embedded in the SPICE
equivalent model of the GaN HEMT, and high-precision
simulation of the forward output characteristics, reverse conduction characteristics and
dynamic switching process of the device is realized. The method can improve the
simulation precision of the GaN HEMT model under the conditions of a wide
voltage range and high-speed switching.