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Minute pattern photoetching method

A lithography pattern and micro technology, applied in microlithography exposure equipment, photolithography process exposure devices, electrical components, etc., can solve the problems of high price, high cost, increase the complexity of the production process, etc., to improve productivity, simplify The effect of mass production process and cost reduction

Inactive Publication Date: 2006-09-06
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the exposure equipment used for lithography is expensive, these methods are costly and will increase the complexity of the production process to varying degrees.

Method used

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  • Minute pattern photoetching method
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  • Minute pattern photoetching method

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Embodiment Construction

[0032] The present invention provides a method for fine photoetching patterns, which mainly includes coating a layer of bottom layer resin on the entire surface of the etched substrate layer; coating a layer of photoresist on the upper surface of the bottom layer resin layer; The layer is exposed to the required pattern and baked after the exposure; the photoresist layer and the bottom resin layer are developed in the developer, and the photoresist pattern is formed on the photoresist and the bottom resin layer; the photoresist and the bottom resin layer are used as the etching The etching stop layer is selectively etched to transfer the pattern to the substrate.

[0033] According to the method of the present invention, the substrate material can be any thin film material that is usually used in the manufacture of semiconductors such as DRAM, which is etched or ion implanted to transfer a pattern or form a desired pattern in a specific area.

[0034] According to the present inve...

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Abstract

With improved DUV photoresist and bottom resin, this invention can decrease photoresist thickness to less than 0.11ª–m for safe height-width ratio to improve picture resolution and size evenness, exposure tolerance and focusing depth of key parts, and reduces cost.

Description

Technical field [0001] The present invention relates to a micro-lithography pattern method, in particular to a method of using a deep ultraviolet (Deep UltraViolet) photoresist (hereinafter referred to as DUV photoresist) and an underlying resin to perform a micro-lithography pattern. Background technique [0002] In the production process of semiconductor devices such as VLSI, lithography is one of the most important steps. All the patterns and doping regions of the thin films related to the structure of the MOS device are determined by photolithography. [0003] In photolithography, the photosensitive material photoresist is applied to the semiconductor wafer substrate, and the photoresist is irradiated on the photoresist through a specific photomask, because the photomask has patterns that reflect the incident light from the light source , The light beam that has not been reflected and passed through the photomask also has the same pattern as the photomask, and the photoresist...

Claims

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Application Information

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IPC IPC(8): G03F7/20H01L21/027
Inventor 崔彰日
Owner SEMICON MFG INT (SHANGHAI) CORP
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