Photosensitive planography printing plate

A lithographic printing plate, printing plate technology, applied in lithographic printing equipment, printing, printing process and other directions, can solve the problems of inability to meet the sensitivity, developing ink acceptability, color resistance and printing durability.

CN1519649AActive Publication Date: 2004-08-11FUJIFILM CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2004-08-11

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Abstract

The object of the invention is to solve the problems in the related art, and to provide a photosensitive lithographic printing plate which is processable for image formation thereon with argon ion laser, FD-YAG laser, violet laser or the like, which has high sensitivity, which satisfies both the requirement of staining resistance in printing and the requirement of printing durability, and which has good developability, good ink acceptability, good image formability and broad exposure latitude.
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Description

technical field

[0001] The invention relates to a photosensitive planographic printing plate containing a photopolymerization layer, especially a photosensitive planographic printing plate for CTP. More specifically, the present invention relates to a photosensitive lithographic printing plate that is highly sensitive to the irradiation of Ar ion lasers, FD-YAG lasers, violet lasers, short-wave semiconductor lasers, etc., and at the same time meets the pollution resistance requirements in printing and printing durability requirements, the photosensitive lithographic printing plate has good developability, good ink acceptance, good image formation and wide exposure latitude. Background technique

[0002] So far, various methods of imaging by photopolymerization are known, and these methods are widely used in various fields such as printing plates, printed circuits, holographic recording, and three-dimensional imaging.

[0003] For example, for the manufacture of printing pla...

Examples

Embodiment approach 1

[0230] Sulfuric acid concentration: 100-200 g / liter (more preferably 130-180 g / liter).

[0231] Aluminum ion concentration: 2-10 g / liter (more preferably 3-7 g / liter).

[0232] Liquid temperature: 15-40°C (more preferably 33-38°C).

Embodiment approach 2

[0234] Sulfuric acid concentration: 50-125g / liter (more preferably 80-120g / liter).

[0235] Aluminum ion concentration: 2-10 g / liter (more preferably 3-7 g / liter).

[0236] Liquid temperature: 40 to 70°C (more preferably 50 to 60°C).

[0237] Any one of the direct power system that directly energizes the aluminum plate through the conductive roller and the liquid power system that indirectly energizes the aluminum plate through the electrolyte can be used as the power source for anodizing the aluminum (alloy) plate.

[0238] For direct power systems, low-speed and low-current anodizing devices are generally used, in which aluminum (alloy) plates are conveyed at a lower line speed of 30m / min or less; as for indirect power systems, high-speed and high-current are generally used Anodizing plants where the plates are conveyed at high line speeds exceeding 30m / min.

[0239] For indirect power systems, gable or linear cell designs can be used, for example as described in Continuou...

Embodiment 1~6 and comparative example 1~4

[0633]

[0634] JIS-A-1050 aluminum plates with a thickness of 0.3 mm were processed into supports A, B, C, D and E in the following manner.

[0635] (Carrier A)

[0636] An aluminum plate (JIS-A-1050) with a thickness of 0.3mm was etched with a solution containing 30g / liter of sodium hydroxide and 10g / liter of aluminum ions at 60°C for 10 seconds, then washed with running water, and neutralized with nitric acid (12g / liter ), and then washed with water. Put the board into a treatment liquid containing 15 g / liter of hydrochloric acid and 10 g / liter of aluminum ions at 30° C., apply a 50 Hz sine wave alternating current, and perform electrolytic surface roughening. The current density is 16A / dm 2 , power is 400C / dm 2 . Then wash with water. Then, etch at 35°C for 10 minutes with a solution containing 36g / liter of sodium hydroxide and 10g / liter of aluminum ions, rinse with running water, and carry out desmutting for 10 seconds in a sulfuric acid aqueous solution containing...