131results about How to "Pattern in good shape" patented technology

A dispersion composition is provided in which the dispersibility of titanium black is high, the sedimentation of titanium black over time is suppressed, and overall dispersibility and storage stability are high. Further, a polymerizable composition is provided in which favorable coating property on a substrate and even film thickness can be obtained, generation of residue in an unexposed region when a pattern is formed can be suppressed, and favorable pattern shape having any steps after exposure / development can be obtained. The dispersion composition contains (A) titanium black, (B) a graft copolymer and (C) a solvent.

Provided are an actinic-ray-sensitive or radiation-sensitive resin composition which has improved development defect and is capable of forming a good pattern shape, an actinic-ray-sensitive or radiation-sensitive film formed using the composition, and a pattern forming method using the composition.The actinic-ray-sensitive or radiation-sensitive resin composition includes (A) a compound which generates an acid represented by the following general formula (I) or (I′) upon irradiation with an actinic-ray or a radiation, and (B) a resin which decomposes by an action of an acid to increase a solubility of the resin in an alkaline developer [each of the symbols in the general formulae (I) and (I′) indicates the meaning described in Claims].

Disclosed is a process for the production of a fine structure through nanoimprinting a photocurable resin composition. The process includes the steps of (1) forming a photocurable resin composition for nanoimprint into a film on a support and transferring a pattern to the film by pressing the film with a nanostamper at a pressure of 5 to 100 MPa, in which the photocurable resin composition contains a curable compound component including at least one cationically polymerizable compound and / or at least one free-radically polymerizable compound; and (2) curing the patterned film to obtain the fine structure.

There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1):O—Ar1  Formula (1)(in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2):O—Ar2—O—Ar3-T-Ar4  Formula (2)(in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.

A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and / or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.

[Problem] To provide a resist underlayer film forming composition for forming a resist underlayer film that has dry etching resistance and heat resistance at the same time. [Solution] A resist underlayer film forming composition which contains a polymer that has a unit structure represented by formula (1). In formula (1), it is preferable that R3 is a hydrogen atom, and both n1 and n2 are 0. A method for manufacturing a semiconductor device, which comprises: a step wherein an underlayer film is formed on a semiconductor substrate with use of a resist underlayer film forming composition of the present invention; a step wherein a hard mask is formed on the underlayer film; a step wherein a resist film is formed on the hard mask; a step wherein a resist pattern is formed by irradiation of light or electron beams and development; a step wherein the hard mask is etched with use of the resist pattern; a step wherein the underlayer film is etched with use of the patterned hard mask; and a step wherein the semiconductor substrate is processed with use of the patterned underlayer film.

A radiation-sensitive resin composition includes a polymer, an acid-labile group-containing resin, a radiation-sensitive acid generator, and a solvent, the polymer including repeating units shown by following general formulas (1) and (2).wherein R1 and R2 represent a hydrogen atom, a methyl group, or a trifluoromethyl group, R3 represents a linear or branched alkyl group having 1 to 6 carbon atoms or an alicyclic hydrocarbon group having 4 to 20 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom, or a derivative thereof, and Z represents a group that includes a group that generates an acid upon exposure to light. The radiation-sensitive resin composition produces an excellent pattern shape, reduces the amount of elution into an immersion liquid upon contact during liquid immersion lithography, ensures that a high receding contact angle is formed by a resist film and an immersion liquid, and rarely causes development defects.

[Object] To provide a coating-type underlayer coating forming composition that is applied for multi-ply coating process by thin film resist in order to prevent collapse of resist pattern after development with miniaturization of resist pattern, and that shows a sufficient etching resistance against a semiconductor substrate to be processed on processing of the substrate by having a low dry etching rate compared with the photoresist and substrate.[Means for solving problems] A coating-type underlayer coating forming composition that is used for lithography process by multiply coating, comprising a polymer containing a vinylnaphthalene based structural unit and an acrylic acid based structural unit containing an aromatic hydroxy group or a hydroxy-containing ester. A coating-type underlayer coating forming composition further comprising an acrylic acid based structural unit containing an aliphatic cyclic compound-containing ester or an aromatic compound-containing ester.

[Problem] To provide a resist underlayer film-forming composition for use in a lithography process for the production of a semiconductor device, said composition having heat resistance. [Solution] A resist underlayer film-forming composition which contains a polymer that has a unit structure represented by formula (1). In the formula, both ring A and ring B represent benzene rings; n1, n2 and n3 are 0; each of R4 and R6 represents a hydrogen atom; and R5 represents a naphthyl group. A method for producing a semiconductor device, which comprises: a step of forming an underlayer film on a semiconductor substrate using the above-described resist underlayer film-forming composition; a step of forming a hard mask on the underlayer film; a step of forming a resist film on the hard mask; a step of forming a resist pattern by irradiation of light or an electron beam and development; a step of etching the hard mask with use of the resist pattern; a step of etching the underlayer film with use of the patterned hard mask; and a step of processing the semiconductor substrate with use of the patterned underlayer film.

The present invention provides an alkali-soluble polymer, a photosensitive resin composition comprising the same, and uses of the same, in particular, the invention provides the alkali-soluble polymer with low curing shrinkage (high plastic residue rate in curing), the photosensitive resin composition capable of forming an excellent pattern shape after curing, a method of manufacturing a curing bas-relief pattern by using the composition, and a semiconductor device and a light-emitting device containing the curing bas-relief pattern. The alkali-soluble polymer has a structure composing of a multicomponent amino compound and at least a carboxyl acid compound selected from a group composed of free polybasic carboxylic acid and derivatives thereof, and a structure containing a crosslinked group formed by reacting with said polybasic carboxylic acid or derivatives thereof.

The invention provides a good combination which has the photocurablity, sealing property, mold release, residual film, pattern figure, coating properties and the etching adaptation. The invention adopts a curable combination used for nano impressing photoetching, which is characterized by comprising 88-99 mass% of polymerized unsaturated monomer, 0.1-11 mass% of photopolymerization initiator and at least one of a 0.001-5 mass% of surfactant containing fluorin, a siloxane surfactant and a fluorin-siloxane surfactant. The polymerized unsaturated monomer comprises one 1-functional group polymerized unsaturated monomer of not less than 10 mass%, wherein the 1-functional group polymerized unsaturated monomer has a portion containing the olefinic unsaturated bond and a portion containing at least a heteroatom.

There is provided an active light sensitive or radiation sensitive composition which contains (A) a compound that generates an acid by irradiation with active light or radiation, (P) a compound of which the solubility in alkali developers is increased due to the action of an acid, and (N) at least one specific compound, and which can satisfy high resolving power, an excellent pattern shape, and low line width roughness (LWR) at the same time to a high level in formation of a very fine pattern (for example, a line width of 50 nm or less), and a resist film, a pattern forming method, a resist-coated mask blank, a method for producing a photomask, a photomask, a method for manufacturing an electronic device, and an electronic device, each of which uses this active light sensitive or radiation sensitive composition.

A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance.

A process for producing a photoresist composition which is capable of suppressing the occurrence of defects, and displays excellent foreign matter characteristics, and superior storage stability as a resist solution. This process involves passing a photoresist composition, comprising a resin component (A) that satisfies a condition (1) below, an acid generator component (B), and an organic solvent (C), through a first filter including a first filtration membrane that satisfies a condition (2) below. (1) The resin component (A) comprises a structural unit (a1) represented by a general formula (I) shown below, and a structural unit (a2) containing an acid dissociable, dissolution inhibiting group. (wherein, R represents a hydrogen atom or a methyl group, and m represents an integer from 1 to 3). (2) The first filtration membrane has a critical surface tension of at least 70 dyne / cm, and has not been subjected to charge modification.

An immersion upper layer film-forming composition includes [A] a polymer component that includes a polymer (A1), and [B] a solvent, the polymer (A1) including a structural unit (I) that includes a group represented by the following formula (i). The structural unit (I) is preferably a structural unit (I-1) represented by the following formula (1). The polymer component [A] preferably further includes a structural unit (II-1) represented by the following formula (2), the structural unit (II-1) being included in the polymer (A1) or a polymer other than the polymer (A1). The polymer component [A] preferably further includes a structural unit (III) that includes a carboxyl group, the structural unit (III) being included in the polymer (A1) or a polymer other than the polymer (A1).

Disclosed is a photocurable resin composition for nanoimprint, which contains a curable monomer, or alternatively a curable monomer and a binder resin. The photocurable resin composition for nanoimprint is characterized by further containing 0.001-5 parts by weight of a compound, which has a reactive functional group and a hydrophobic functional group in the same molecular structure, per 100 parts by weight of the total of the curable monomer and the binder resin. The reactive functional group is preferably composed of at least one functional group selected from the group consisting of a hydroxyl group, an epoxy group, a vinyl ether group, an oxetanyl group, an alkoxysilane group and a radically polymerizable vinyl group. The hydrophobic functional group is preferably composed of at leastone functional group selected from the group consisting of a fluorine atom-containing group, an alkylsilane group, an alicyclic hydrocarbon group, and an aliphatic hydrocarbon group having 4 or more carbon atoms.

[Object] To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative.[Means for Solving Problems] A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1):wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.

An airbag is disposed over almost the entire length along a roof side rail. The airbag comprises a duct formed with a gas introduction hole and a plurality of chambers communicating with the duct. The duct comprises a long first duct part and a short second duct part arranged with the gas introduction hole being provided therebetween. The inlet of a chamber closest to the gas introduction hole in the first duct part has a shape that becomes narrower gradually from the upper part toward the lower part. The passage width of the uppermost part of the inlet of the closest chamber is greater than the depth to the narrowest part thereof, and the passage width of the narrowest part is narrower than the passage width of the first duct part around the inlet thereof.

A colored radiation-sensitive composition contains (A) a dye multimer, (B) a pigment, (C) a polymerizable compound, (D) a photopolymerization initiator, and (E) a dispersion resin obtained by reacting a polymer, which has a hydroxyl group on one terminal, with an acid anhydride.

A chemical amplification resist composition according to the present invention includes (A) a compound including a triarylsulfonium cation having one or more fluorine atoms and capable of generating an acid with a volume of 240 Å3 or higher by irradiation of active rays or radiation; and (B) a compound including a phenolic hydroxyl group.

The invention provides a light-sensitive black composition, containing (a) carbon black, (b) dispersant, (c) pigment derivatives, (d) photo-polymerization initiator, and (e) olefinic-bond unsaturated compound. The carbon black (a) has the average primary particle-size of 15 to 25nm, specific surface area of 100 to 180m<2> / g, and absorption capacity to dibutyl phthalate of less than 55cm<3> / 100g. The dispersant (b) is composed of phosphate esters pigment dispersant or specific acidic dispersant. The pigment derivatives (c) are composed of specific alkaline pigment derivatives.

An airbag is disposed over almost the entire length along a roof side rail. The airbag comprises a duct formed with a gas introduction hole and a plurality of chambers communicating with the duct. The duct comprises a long first duct part and a short second duct part arranged with the gas introduction hole being provided therebetween. The inlet of a chamber closest to the gas introduction hole in the first duct part has a shape that becomes narrower gradually from the upper part toward the lower part. The passage width of the uppermost part of the inlet of the closest chamber is greater than the depth to the narrowest part thereof, and the passage width of the narrowest part is narrower than the passage width of the first duct part around the inlet thereof.

A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1):whereinR1 represents a hydrogen atom, a methyl group, or a halogen atom;R2 and R3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group;L represents a divalent linking group or a single bond;Y represents a substituent excluding a methylol group;Z represents a hydrogen atom or a substituent;m represents an integer of 0 to 4;n represents an integer of 1 to 5; andm+n is 5 or less.

The present invention provides a positive resist composition wherein at least a polymer included in a base resin has a repeating unit with an acid labile group having absorption at the 248 nm wavelength light and the repeating unit is included with a ratio of 1 - 10 % of all repeating units of polymers included in the base resin. There can be provided a positive resist composition with equal or higher sensitivity and resolution than those of conventional positive resist compositions, and in particular, by which a pattern profile on a substrate with high reflectivity is excellent and generation of a standing wave and line edge roughness are reduced.

The invention provides an alkali-developable photosensitive resin composition which can prevent from being compatible with printing ink, and produce films of which the surface has excellent appearance and pattern and excellent ink resistance even after long time use or frequent watching. The alkali-developable photosensitive resin composition contains a fluorine-containing resin (A) serving as an ink-resistant agent and an alkali-developable photosensitive component reacting under ultraviolet light having a wavelength within 300-450 nm, wherein the fluorine-containing resin (A) is a prescribed random or block copolymer, of which the average molecular weight Mw is within the range of 2000-20000. Moreover, the fluorine-containing resin (A) accounts for 0.05-1 mass part relative to total 100 mass parts except the solvent.

There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.

The invention provides a developing solution which can be used suitably for the development of a thick resist comprising a chemically amplified resist. Disclosed is a photoresist developing solution comprising an aqueous quaternary ammonium compound solution containing an anionic surfactant and a cationic surfactant, wherein the anionic surfactant is represented by the formula (1) and is containedin an amount of 0.1 to 5% by mass and the cationic surfactant is contained in an amount of 0.01 to 2% by mass relative to 100% by mass of the total mass of the photoresist developing solution. (1) wherein R<1> represents a hydrogen atom or a methyl group; R<2> represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; A represents an alkylene group having 1 to 4 carbon atoms, provided that AO's may be the same as each other or may be a combination of different two or more groups in the molecule; p is an integer of 1 to 3; m is an integer of 5 to 30; and M represents a hydrogen atom or an ammonium ion.

The problem of the present invention is to provide an etching solution composition that can etch with high accuracy a metal-laminated film pattern comprising thin films of copper and a copper alloy, can form an excellent pattern shape, and has practically excellent and stable characteristics with long solution life, and to provide an etching method using such etching solution composition. The present invention relates to an etching method for etching a metal-laminated film having a layer consisting of copper and a layer consisting of a copper alloy containing copper, using an etching solution composition comprising phosphoric acid, nitric acid, acetic acid and water, as well as to said etching solution composition.

To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative.A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1):wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.