Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resist underlayer film forming composition for lithography containing polyether structure-containing resin

a technology of polyether structure and composition, applied in the direction of plastic/resin/waxes insulators, instruments, photomechanical equipment, etc., can solve the problem of large influence of active ray diffused reflection on the substrate or standing wave, difficult to secure a resist pattern film thickness sufficient for processing the substrate, and reduce the effect of etching resistan

Inactive Publication Date: 2013-07-25
NISSAN CHEM IND LTD
View PDF9 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a resist underlayer film forming composition that can effectively form a pattern shape without intermixing with the upper layer of the resist. The composition has properties of effectively suppressing reflection on the substrate and providing an anti-reflective coating for exposure light. The composition can provide an excellent resist underlayer film that has a selection ratio of dry etching rate close to that of the resist, a selection ratio of a dry etching rate smaller than that of the resist, or a selection ratio of a dry etching rate smaller than that of the semiconductor substrate. The composition can thin the resist to prevent collapsing after development, and can be used as a planarization film, a resist underlayer film, a contamination preventing film for the resist layer, and a film having dry etching selectivity in the lithography process of semiconductor production. The composition includes a specific polymer that has high heat resistance and is difficult to cause thermal degradation even by the deposition of the deposited substance.

Problems solved by technology

Following such a tendency, the influence of diffused reflection of an active ray on a substrate or a standing wave has become a large problem.
Progress in refinement of the resist pattern will cause a problem of the resolution or collapse of a resist pattern after development; therefore, thinning of the resist will be required.
In this sense, it is difficult to secure a resist pattern film thickness sufficient for processing the substrate, which requires a process for imparting a function as a mask for processing the substrate not only to the resist pattern, but also to the resist underlayer film provided between the resist and the semiconductor substrate to be processed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resist underlayer film forming composition for lithography containing polyether structure-containing resin
  • Resist underlayer film forming composition for lithography containing polyether structure-containing resin
  • Resist underlayer film forming composition for lithography containing polyether structure-containing resin

Examples

Experimental program
Comparison scheme
Effect test

example

Synthesis Example 1

[0071]Into a flask equipped with a stirrer, a reflux apparatus, and a thermometer, 28.04 g of 9,9-bis(4-hydroxyphenyl)fluorene, 13.97 g of 4,4′-difluorobenzophenone, 12.32 g of potassium carbonate, and 162.56 g of N-methyl-2-pyrrolidinone were charged. Then, the inside of the flask was purged with nitrogen and the flask was heated until the inner temperature thereof became 140° C., followed by effecting the reaction for about 24 hours. The synthesized polymer was cooled down to room temperature and the reaction mixture was filtered for removing a precipitate to recover the resultant reaction filtrate. The reaction filtrate was mixed with about 10 mL of a mixture of N-methyl-2-pyrrolidinone and 2 mol / L hydrochloric acid in a volume ratio of 90:10. Then, the resultant reaction filtrate was charged into methanol to perform reprecipitation purification of the reaction filtrate.

[0072]Furthermore, the resultant precipitate was washed with water and methanol and was vacu...

synthesis example 2

[0073]Into a 100 mL three-neck flask, 6.76 g of 6,6′-(9H-fluorene-9,9-diyl)dinaphthalene-2-ole, 3.27 g of 4,4′-difluorobenzophenone, 42.72 g of N-methyl-2-pyrrolidinone, and 2.49 g of potassium carbonate were charged. Then, the inside of the flask was purged with nitrogen and the flask was heated to 170° C., followed by effecting the reaction for about 24 hours. Then, to the resultant reaction mixture, 0.65 g of 1-naphthol dissolved in 5.84 g of N-methyl-2-pyrrolidinone was added and the resultant reaction mixture was stirred further for 2 hours. After the completion of the reaction, the reaction mixture was diluted with 20 g of N-methyl-2-pyrrolidinone and a precipitate was removed by filtration. The recovered filtrate was dropped into a mixed solution of methanol / water / toluene (350 g / 50 g / 30 g) to perform reprecipitation. The resultant precipitate was filtered under reduced pressure and the filtered substance was dried under reduced pressure at 85° C. over one night. Then, 7.92 g ...

synthesis example 3

[0074]Into a 100 mL three-neck flask, 5.09 g of 4-(4-fluorophenylethynyl)phenol, 45.84 g of N-methyl-2-pyrrolidinone, and 3.65 g of potassium carbonate were charged. Then, the inside of the flask was purged with nitrogen and the flask was heated to 170° C., followed by effecting the reaction for about 24 hours. After the completion of the reaction, a precipitate was removed by filtration. The recovered filtrate was dropped into 400 g of methanol to perform reprecipitation. The resultant precipitate was filtered under reduced pressure and the filtered substance was dried under reduced pressure at 85° C. over one night. Then, 5.12 g of a polyether was obtained as a green color powder. The obtained polymer corresponded to Formula (3-3). By GPC, the obtained polymer had a weight average molecular weight Mw of 51,000 and a polydispersity Mw / Mn of 5.47 that were measured in terms of polystyrene.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
wavelengthaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1):O—Ar1  Formula (1)(in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2):O—Ar2—O—Ar3-T-Ar4  Formula (2)(in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.

Description

TECHNICAL FIELD[0001]The present invention relates to a resist underlayer film forming composition for lithography that is effectively used for processing of a semiconductor substrate, a resist pattern forming method employing the resist underlayer film forming composition, and a method for producing a semiconductor device.BACKGROUND ART[0002]Conventionally, in the production of semiconductor devices, fine processing by lithography using a photoresist composition has been performed. The fine processing is a processing method including: forming a thin film of a photoresist composition on a substrate to be processed such as a silicon wafer; irradiating the resultant thin film with an active ray such as an ultraviolet ray through a mask pattern in which a pattern of a semiconductor device is depicted for development; and etching the substrate to be processed such as a silicon wafer using the resultant photoresist pattern as a protecting film. Recently, however, the high integration of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/09H01L21/308
CPCG03F7/091H01L21/308G03F7/094C08G2650/40C08G65/4012C08L71/00C08G65/4006Y10T428/31942G03F7/11H01L21/0273C09D171/00G03F7/2059G03F7/32H01L21/3086
Inventor OKUYAMA, HIROAKISOMEYA, YASUNOBUKATO, MASAKAZUSHINJO, TETSUYAHASHIMOTO, KEISUKE
Owner NISSAN CHEM IND LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com