Resist underlayer film forming composition for lithography containing polyether structure-containing resin

a technology of polyether structure and composition, applied in the direction of plastic/resin/waxes insulators, instruments, photomechanical equipment, etc., can solve the problem of large influence of active ray diffused reflection on the substrate or standing wave, difficult to secure a resist pattern film thickness sufficient for processing the substrate, and reduce the effect of etching resistan

Inactive Publication Date: 2013-07-25
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0023]With the resist underlayer film forming composition of the present invention, an advantageous pattern shape of a resist can be formed without causing intermixing with an upper layer of the resist underlayer film.
[0024]The resist underlayer film forming composition of the present invention can have performance of effectively suppressing reflection on the substrate and provide an effect as an anti-reflective coating for exposure light in combination with other advantageous properties.
[0025]The resist underlayer film forming composition of the present invention can provide an excellent resist underlayer film having a selection ratio of a dry etching rate close to that of the resist, a selection ratio of a dry etching rate smaller than that of the resist, or a selection ratio of a dry etching rate smaller than that of the semiconductor substrate.
[0026]Due to refinement of the resist pattern, for preventing the resist pattern from collapsing after development, thinning of the resist is performed. For such a thin film resist, there is a process including: transferring a resist pattern to an underlayer film thereof by etching process; and processing the substrate using the underlayer film as a mask. There is another process in which a process including transferring a resist pattern to an underlayer film thereof by etching process and further transferring the pattern transferred to the underlayer film to an underlayer film thereof using a gas having a different gas composition is repeatedly performed so that the substrate is processed. The resist underlayer film and the forming composition thereof of the present invention are effective for these processes and when the substrate is processed using the resist underlayer film of the present invention, the resist underlayer film has satisfactory etching resistance relative to the substrate to be processed (for example, a thermally oxidized silicon film, a nitride silicon film, a polysilicon film, and the like on the substrate).
[0027]The resist underlayer film of the present invention can be used as a planarization film, a resist underlayer film, a contamination preventing film for the resist layer, and a film having dry etching selectivity. Use of the resist underlayer film of the present invention makes it possible to easily and accurately perform the formation of a resist pattern in a lithography process of the semiconductor production.
[0028]There is a process including: forming a resist underlayer film with a resist underlayer film forming composition on a substrate; forming a hardmask on the resist underlayer film; forming a resist film on the hardmask; forming a resist pattern by exposure and development; transferring the resist pattern to the hardmask; transferring the resist pattern transferred to the hardmask to the resist underlayer film; and processing the semiconductor substrate according to the resist underlayer film. In this process, there are a case where the formation of the hardmask is performed by a coating-type composition containing an organic polymer or an inorganic polymer and a solvent, and a case where the formation of the hardmask is performed by vacuum deposition of an inorganic substance. In vacuum deposition of an inorganic substance (for example, silicon nitride oxide), a deposited substance is deposited on the surface of the resist underlayer film and at this time, the temperature of the surface of the resist underlayer film is elevated to around 400° C. In the resist underlayer film forming composition of the present invention, the used polymer is a copolymer containing a polyether structure, for example, a unit structure of fluorene naphthol and a unit structure of arylene alkylene, so that the used polymer has extremely high heat resistance and is difficult to cause thermal degradation even by the deposition of the deposited substance.BEST MODES FOR CARRYING OUT THE INVENTION

Problems solved by technology

Following such a tendency, the influence of diffused reflection of an active ray on a substrate or a standing wave has become a large problem.
Progress in refinement of the resist pattern will cause a problem of the resolution or collapse of a resist pattern after development; therefore, thinning of the resist will be required.
In this sense, it is difficult to secure a resist pattern film thickness sufficient for processing the substrate, which requires a process for imparting a function as a mask for processing the substrate not only to the resist pattern, but also to the resist underlayer film provided between the resist and the semiconductor substrate to be processed.

Method used

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  • Resist underlayer film forming composition for lithography containing polyether structure-containing resin
  • Resist underlayer film forming composition for lithography containing polyether structure-containing resin
  • Resist underlayer film forming composition for lithography containing polyether structure-containing resin

Examples

Experimental program
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example

Synthesis Example 1

[0071]Into a flask equipped with a stirrer, a reflux apparatus, and a thermometer, 28.04 g of 9,9-bis(4-hydroxyphenyl)fluorene, 13.97 g of 4,4′-difluorobenzophenone, 12.32 g of potassium carbonate, and 162.56 g of N-methyl-2-pyrrolidinone were charged. Then, the inside of the flask was purged with nitrogen and the flask was heated until the inner temperature thereof became 140° C., followed by effecting the reaction for about 24 hours. The synthesized polymer was cooled down to room temperature and the reaction mixture was filtered for removing a precipitate to recover the resultant reaction filtrate. The reaction filtrate was mixed with about 10 mL of a mixture of N-methyl-2-pyrrolidinone and 2 mol / L hydrochloric acid in a volume ratio of 90:10. Then, the resultant reaction filtrate was charged into methanol to perform reprecipitation purification of the reaction filtrate.

[0072]Furthermore, the resultant precipitate was washed with water and methanol and was vacu...

synthesis example 2

[0073]Into a 100 mL three-neck flask, 6.76 g of 6,6′-(9H-fluorene-9,9-diyl)dinaphthalene-2-ole, 3.27 g of 4,4′-difluorobenzophenone, 42.72 g of N-methyl-2-pyrrolidinone, and 2.49 g of potassium carbonate were charged. Then, the inside of the flask was purged with nitrogen and the flask was heated to 170° C., followed by effecting the reaction for about 24 hours. Then, to the resultant reaction mixture, 0.65 g of 1-naphthol dissolved in 5.84 g of N-methyl-2-pyrrolidinone was added and the resultant reaction mixture was stirred further for 2 hours. After the completion of the reaction, the reaction mixture was diluted with 20 g of N-methyl-2-pyrrolidinone and a precipitate was removed by filtration. The recovered filtrate was dropped into a mixed solution of methanol / water / toluene (350 g / 50 g / 30 g) to perform reprecipitation. The resultant precipitate was filtered under reduced pressure and the filtered substance was dried under reduced pressure at 85° C. over one night. Then, 7.92 g ...

synthesis example 3

[0074]Into a 100 mL three-neck flask, 5.09 g of 4-(4-fluorophenylethynyl)phenol, 45.84 g of N-methyl-2-pyrrolidinone, and 3.65 g of potassium carbonate were charged. Then, the inside of the flask was purged with nitrogen and the flask was heated to 170° C., followed by effecting the reaction for about 24 hours. After the completion of the reaction, a precipitate was removed by filtration. The recovered filtrate was dropped into 400 g of methanol to perform reprecipitation. The resultant precipitate was filtered under reduced pressure and the filtered substance was dried under reduced pressure at 85° C. over one night. Then, 5.12 g of a polyether was obtained as a green color powder. The obtained polymer corresponded to Formula (3-3). By GPC, the obtained polymer had a weight average molecular weight Mw of 51,000 and a polydispersity Mw / Mn of 5.47 that were measured in terms of polystyrene.

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Abstract

There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1):O—Ar1  Formula (1)(in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2):O—Ar2—O—Ar3-T-Ar4  Formula (2)(in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.

Description

TECHNICAL FIELD[0001]The present invention relates to a resist underlayer film forming composition for lithography that is effectively used for processing of a semiconductor substrate, a resist pattern forming method employing the resist underlayer film forming composition, and a method for producing a semiconductor device.BACKGROUND ART[0002]Conventionally, in the production of semiconductor devices, fine processing by lithography using a photoresist composition has been performed. The fine processing is a processing method including: forming a thin film of a photoresist composition on a substrate to be processed such as a silicon wafer; irradiating the resultant thin film with an active ray such as an ultraviolet ray through a mask pattern in which a pattern of a semiconductor device is depicted for development; and etching the substrate to be processed such as a silicon wafer using the resultant photoresist pattern as a protecting film. Recently, however, the high integration of ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/09H01L21/308
CPCG03F7/091H01L21/308G03F7/094C08G2650/40C08G65/4012C08L71/00C08G65/4006Y10T428/31942G03F7/11H01L21/0273C09D171/00G03F7/2059G03F7/32H01L21/3086
Inventor OKUYAMA, HIROAKISOMEYA, YASUNOBUKATO, MASAKAZUSHINJO, TETSUYAHASHIMOTO, KEISUKE
Owner NISSAN CHEM IND LTD
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