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939 results about "Semiconductor production" patented technology

Semiconductor production line self-adaptation dynamic dispatching device

The invention relates to a semiconductor production line self-adaptation dynamic dispatching device which is connected with a manufacturing execution system. The dispatching device comprises a dispatching management device, a learning device and a display device. The dispatching management device is connected with the manufacturing execution system, and the dispatching management device, the learning device and the display device are connected in sequence. The dispatching management device acquires a list of current workpieces to be dispatched through the manufacturing execution system and transmits the list of the current workpieces to be dispatched to the learning device, the learning device calculates machining priorities of the current workpieces to be dispatched according to a dispatching rule stored in the learning device and transmits the priorities of the current workpieces to be dispatched to the display device, and the display device displays the priorities of the current workpieces to be dispatched. Compared with the prior art, the semiconductor production line self-adaptation dynamic dispatching device has the advantages of being capable of improving workpiece machining efficiency and bottleneck equipment use ratios, good in dynamic regulation performance, and the like.
Owner:TONGJI UNIV

Scheduling method for semiconductor production line based on multi-ant-colony optimization

The invention relates to a scheduling method for a semiconductor production line based on multi-ant-colony optimization. The method comprises the following steps of: determining bottleneck processing areas of the semiconductor production line, wherein processing areas, of which average utilization rate exceeds 70 percent, of equipment are regarded as the bottleneck processing areas; setting the number of ant colonies as the number of the bottleneck processing areas, and initializing a multi-ant-colony system; parallelly searching scheduling schemes of all bottleneck processing areas by all ant colony systems; restraining and integrating the scheduling schemes of all bottleneck processing areas into one scheduling scheme for all bottleneck processing areas according to a procedure processing sequence, and deducing the scheduling schemes of other non-bottleneck processing areas by using the scheduling scheme and the procedure processing sequence as restraint to obtain the scheduling scheme of the whole semiconductor production line; and judging whether program ending conditions are met, if so, inputting the scheduling scheme which is optimal in performance, otherwise, updating pheromones of the ant colonies by using the scheduling scheme which is current optimal in performance, and guiding a new round of searching process. The method has the advantages that: an important practical value is provided for solving the optimal dispatching problem of the semiconductor production line; and important instructional significance is provided for improving the production management level of semiconductor enterprises of China.
Owner:TONGJI UNIV

Graphite matrix flawless TaC coating and manufacturing method thereof

InactiveCN101445392AImprove corrosion resistanceImprove diffusion resistanceGraphite substrateThermal stability
The invention discloses a graphite matrix flawless TaC coating and a manufacturing method thereof. A tie coat is deposited on a graphite matrix. A TaC main coating is deposited on the outer layer of the tie coat. The tie coat is composed of a SiC-TaC codeposition coating or compounded by two transition layers of the SiC-TaC codeposition coating and a SiC-TaC laminated coating. When the tie coat is compounded by two transition layers of the SiC-TaC codeposition coating and the SiC-TaC laminated coating, the SiC-TaC codeposition coating serves as a first transition layer, and the SiC-TaC laminated coating serves as a second transition layer; and then the deposition of the tie coat is ended; or the SiC-TaC codeposition coating and the SiC-TaC laminated coating are alternatively deposited many times. Good TaC coating which has small heat stress, no macroscopic cracking, corrosion-resistance, and good thermal stability is deposited out of the surface of the graphite material. The method is suitable for preparing graphite substrate, graphite crucible, graphite windpipe, graphite guide shell coating in the crystal and semiconductor production, protecting and cleaning coating such as antisepsis, anti-pollution, anti-infiltration, anti-oxidation of graphite parts in other various hot environments.
Owner:CENT SOUTH UNIV

Vaporizer and apparatus for vaporizing and supplying

InactiveUS20030209201A1Reduce and stabilize pressure fluctuation in and flow rate fluctuationAvoid depositionMixing methodsUsing liquid separation agentVaporizationProduct gas
The present invention provides a vaporizer comprising a vaporization chamber for a CVD material, a CVD material feed portion supplying the CVD material for the vaporization chamber, a vaporized gas exhaust port and a heating means for heating the vaporization chamber, characterized in that the CVD material feed portion has passageways for the CVD material and for a carrier gas respectively and the passageway for the CVD material has a pressure loss-inducing means for the CVD material. At the same time, the present invention provides an apparatus for vaporizing and supplying that feeds a CVD material to a vaporizer via a liquid flow controller, and after vaporizing the CVD material that supplies the vaporized gas for a semiconductor production apparatus, characterized in having a pressure loss-inducing means for the CVD material between the liquid flow controller and the vaporizer. According to the present invention, even in the case of vaporizing and supplying with a decrease in a feed amount of a carrier gas to be supplied accompanying the CVD material employing a solid CVD material, reducing and stabilizing both the pressure fluctuation in the vaporizer and the flow rate fluctuation in the liquid flow controller and efficiently vaporizing a CVD material at a desirable concentration and flow rate without causing deposit or adhesion of the solid material in the vaporization chamber can be achieved.
Owner:JAPAN PIONICS
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