Ceramic substrate for a semiconductor production/inspection device

a ceramic substrate and semiconductor technology, applied in the direction of ohmic-resistance heating, hot plate heating arrangements, coatings, etc., can solve the problem that the breakdown voltage of ceramic dielectric films cannot be easily kept at a high level, and achieve the effect of high temperature and sufficient breakdown voltag

Inactive Publication Date: 2005-05-10
IBIDEN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0004]As this ceramic dielectric film, a nitride ceramic has been conventionally used. Hitherto, however, the dielectric film has been formed by sintering without addition of an oxide and the like. Therefore, almost all of pores made inside the dielectric film interconnect with each other, and the number of open pores is also large. If such pores are present and the volume resistivity of the dielectric layer decreases at high temperature, electrons easily fly or jump over the air in the pores by application of a voltage so that the so-called spark is caused. Therefore, unless the pore diameter of the maximum pore is made small, there remains a problem that the sufficient breakdown voltage of the ceramic dielectric film cannot be easily kept at a high level.
[0007]As a result of eager investigation for solving the above-mentioned problem, the inventors have newly found out that by adding an oxide to a nitride ceramic and firing the resultant product, sintering can be advanced so that interconnecting pores are not practically generated and independent pores are formed, and that by incorporating the oxide into boundaries between particles of the ceramic, a sufficient breakdown voltage at high temperature can be ensured even if the diameter of the pores is large.

Problems solved by technology

Therefore, unless the pore diameter of the maximum pore is made small, there remains a problem that the sufficient breakdown voltage of the ceramic dielectric film cannot be easily kept at a high level.
It has been found out that such a problem is caused in not only an electrostatic chuck but also a ceramic substrate for a semiconductor-producing / examining device, wherein a conductor is formed on a surface of the ceramic substrate or inside the ceramic substrate.

Method used

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  • Ceramic substrate for a semiconductor production/inspection device
  • Ceramic substrate for a semiconductor production/inspection device
  • Ceramic substrate for a semiconductor production/inspection device

Examples

Experimental program
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example 4

Production of an Electrostatic Chuck 401 (Reference to FIG. 6)

[0256]The steps (1) to (5) (with the condition in the first line in Table 3) in Example 2 were carried out and then nickel was thermally sprayed onto the bottom surface. Thereafter, a lead / tellurium type Peltier device was jointed thereto, so as to obtain an electrostatic chuck 401.

[0257]The thus-produced electrostatic chuck was superior in temperature-falling property. Thus, when the chuck was cooled by means of the Peltier device, the temperature fell from 450 ° C. to 100° C. in 3 minutes.

example 5

Production of a Wafer Prober 601 (Reference to FIG. 11)

[0258](1) The following paste was used to conduct formation by a doctor blade method to obtain a green sheet of 0.47 mm in thickness: a paste obtained by mixing 1000 parts by weight of aluminum nitride powder (made by Tokuyama Corp., average particle diameter: 1.1 μm) fired at 500° C. for 1 hour in the air, 40 parts by weight of yttria (average particle diameter: 0.4 μm), 10 parts by weight of SiC and 530 parts by weight of mixed alcohols of 1-butanol and ethanol.[0259](2) Next, this green sheet was dried at 80° C. for 5 hours, and subsequently through holes for conductor-filled through holes for connecting external terminals pins to heating elements were made by punching.[0260](3) The following were mixed to prepare a conductor containing paste A: 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, 3.5 parts by weight of α-terpineol solvent, an...

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Abstract

The present invention provides a ceramic substrate which can keep a sufficiently large breakdown voltage even if the pore diameter of its maximum pore is 50 μm or less to be larger than that of conventional ceramic substrates, can give a large fracture toughness value because of the presence of pores, can resist thermal impact, and can give a small warp amount at high temperature. The ceramic substrate of the present invention is a ceramic substrate for a semiconductor-producing / examining device having a conductor formed on a surface of the ceramic substrate or inside the ceramic substrate, wherein: the substrate is made of a non-oxide ceramic containing oxygen; and the pore diameter of the maximum pore thereof is 50 μm or less.

Description

FIELD OF THE INVENTION[0001]The present invention relates to a ceramic substrate for a semiconductor-producing / examining device, used mainly in the semiconductor industry, particularly to a ceramic substrate which has a high breakdown voltage, is superior in the capability of absorbing a silicon wafer when used as an electrostatic chuck, and is also superior in temperature-rising and temperature-falling property when used as a hot plate (ceramic heater) or a ceramic plate for a wafer prober.BACKGROUND ART[0002]Semiconductors are very important products necessary in various industries. A semiconductor chip is produced, for example, by slicing a silicon monocrystal into a given thickness to produce a silicon wafer, and then forming plural integrated circuits and the like on this silicon wafer.[0003]In the process for producing this semiconductor chip, a silicon wafer put on an electrostatic chuck is subjected to various treatments such as etching and CVD to form a conductor circuit, a...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/68H01L21/67H01L23/498H01L23/48
CPCH01L21/6732H01L21/6835H01L21/68757H01L23/49894H01L2924/0002H01L2924/19041H01L2924/00
Inventor HIRAMATSU, YASUJIITO, YASUTAKA
Owner IBIDEN CO LTD
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