10results about How to "Inhibition reflex" patented technology

The invention discloses a hybrid photomultiplier coaxial output structure based on a microstrip line. The hybrid photomultiplier coaxial output structure comprises a semiconductor detector, a bonding wire, the microstrip line, a ground electrode, a lead pin, a medium, an outer conductor base and a detector lead pin. The semiconductor detector is used for receiving the photoelectrons converted by the photoelectric cathode and generating a current signal; the bonding wire is used for electrically connecting the semiconductor detector and the microstrip structure; the microstrip line and the ground electrode adopt gold-plated kovar alloy parts to form an in-tube microstrip structure; the guide pin and the detector guide pin are kovar alloy guide pins and form an inner conductor with a coaxial structure; the outer conductor base is a kovar alloy disc and forms an outer conductor with a coaxial structure; the medium is glass or ceramic. According to the coaxial output structure, a vacuum tube is of a 50-ohm microstrip structure, the exterior of the vacuum tube is of a 50-ohm SMA coaxial structure, and a complete 50-ohm coaxial line is formed by connecting a microstrip line and a guide pin together. The structure provided by the invention has the advantages of high transmission speed, small signal reflection and oscillation and the like, and is more beneficial to detection of ultrafast optical pulse signals.

A power supply system of a plasma processing apparatus disclosed in the present invention includes a high-frequency power supply, a bias power supply, and a power supply control section. The high-frequency power supply generates high-frequency electric power for plasma generation. The bias power supply supplies electric bias to a substrate support section. The power supply control section determines the frequency of the high-frequency electric power in each of a plurality of designated phase periods among a plurality of phase periods within a waveform period for the electric bias, so as to suppress reflection of the high-frequency electric power. The power supply control section determines the frequency of the high-frequency electric power in each of the phase periods other than the plurality of designated phase periods among the plurality of phase periods, by using an interpolation of the frequencies of the high-frequency electric power in each of the plurality of designated phase periods.

The invention provides a local oscillation noise suppression device for a superconductive tunnel junction mixer, and belongs to the technical field of terahertz detection. The device comprises a local oscillator signal source, a local oscillator light path, a superconductive tunnel junction mixer and a quasi-optical filter. The local oscillator signal source provides a local oscillator signal to the superconductive tunnel junction mixer through a local oscillator light path; the quasi-optical filter is located between the local oscillator signal source and the local oscillator light path and used for attenuating local oscillator power and reducing reflection of signals in the local oscillator light path. The quasi-optical filter is formed by machining an integrated metal plate, circular grooves are formed in the symmetrical positions of the two sides of the metal plate, and through holes are formed in the centers of the grooves and serve as attenuation windows. The environment adaptability is high, and normal-temperature / low-temperature stable work is supported; signal reflection and sideband noise are effectively suppressed by the composite design of the conical structure and the black body absorbing coating; and realizing accurate power matching based on a Gaussian beam theory.

The utility model relates to the technical field of I2C communication, in particular to a long-distance I2C bus signal enhancement circuit capable of intelligently inhibiting signal reflection. The circuit comprises a micro-control unit, an I2C bus and a slave, the slave is connected with the I2C bus through a common mode choke, the I2C bus is connected with the micro-control unit sequentially through a resistance matching network and a repeater, and a data line of the I2C bus is further connected with the micro-control unit through a differential voltage feedback circuit and used for dynamically monitoring data signals of the I2C bus. And the driving end of the resistance matching network is connected with the micro-control unit. According to the utility model, common-mode interference is suppressed through the common-mode choke, and parasitic capacitance and parasitic inductance are isolated through the repeater, so that the edge slope of a signal is optimized; through the resistance matching network and the differential voltage feedback circuit, the circuit resistance value is adjusted in real time, the signal reflection and offset phenomena are inhibited, and the signal quality is effectively improved.

The power supply system of the plasma processing apparatus of the present invention includes a high-frequency power supply, a bias power supply, and a power control unit. The high-frequency power supply is capable of generating high-frequency electrical power for plasma generation. The bias power supply is capable of supplying electrical bias to the substrate support. The power control unit is capable of periodically modulating the power level of the high-frequency electrical power during repetitions of a modulation cycle comprising at least two sub-periods. The power control unit is capable of adjusting the frequency of the high-frequency electrical power used in the nth phase period within the modulation cycle included in the feedback period continuing from the start time of each of the at least two sub-periods, based on changes in the frequency of the high-frequency electrical power in the nth phase period during repetitions of the preceding modulation cycle and changes in the degree of reflection of the high-frequency electrical power.

Disclosed is an organic light emitting diode that suppresses external light reflection while reducing loss of light generated in an organic light emitting layer. The organic light emitting diode includes a substrate, an anode on the substrate, a bank on the anode and exposing a portion of the anode to define an emission area, an organic light emitting layer on the emission area and the bank, a cathode on the organic light emitting layer, a plurality of light-shielding patterns on the cathode and overlapping the bank, and a light loss inducing layer on the same plane as the plurality of light-shielding patterns and disposed between a pair of light-shielding patterns among the plurality of light-shielding patterns, the light loss inducing layer having a thickness identical to that of the plurality of light-shielding patterns and overlapping the emission area.

The application provides a semiconductor device defect testing system and a semiconductor device defect analysis method, which comprise a waveform generator and a semiconductor analyzer. The output end of the waveform generator is connected to the gate of a semiconductor device to be detected through a gate probe. The first input end of the semiconductor analyzer is connected to the source of the semiconductor device to be detected through a source probe, and is also connected to the drain of the semiconductor device to be detected through a drain probe. The second input end of the semiconductor analyzer is connected to the substrate of the semiconductor device to be detected through a substrate probe. Since the ground end of the waveform generator and the ground end of the semiconductor analyzer are both connected to a common ground end, the waveform generator and the semiconductor analyzer do not introduce noise due to connection to different ground ends, thereby improving the accuracy of the semiconductor analyzer in detecting source-drain current and substrate current, and further enabling the semiconductor analyzer to detect a small current of the order of a few picoamperes.

The application discloses a kind of based on parasitic reflection inhibition method of multi-frequency phase shift method, comprising: obtaining the deformed fringe image after object reflection;According to intensity information, using phase shift method, calculate truncated phase and generate modulation curve;Truncated phase is expanded into continuous phase per frequency;Judge whether there is minimum value in modulation curve, if yes, use auxiliary function peak position search continuous phase in which the fringe frequency that phase error is zero;Extract the truncated phase corresponding to the fringe frequency that phase error is zero, carry out phase expansion, and with the minimum number of 0 in modulation curve as the demarcation line, the phase order of the best frequency in the fringe frequency that phase error is zero is corrected in regional, to obtain correction result;According to correction result, calculate upper surface screen coordinate;Otherwise, according to maximum fringe frequency, calculate upper surface screen coordinate.

This invention discloses a low-axial-ratio, high-power-capacity circularly polarized antenna with an isolation structure, belonging to the field of high-power microwave measurement technology. This invention adds an isolation structure between the antenna's circular polarization generation structure and the feeding structure to suppress the influence of different connection structures at the antenna's rear end. A typical isolation structure is a rearward-expanding metal surface. On the one hand, through appropriate tilt angle design, it effectively suppresses the forward reflection of the isolation structure itself, reducing its impact on the front-end circular polarization generation structure and ensuring low-axial-ratio characteristics. On the other hand, by adopting appropriate depth and size design, it effectively suppresses the backward propagation of surface current and reflection from the rear-end metal surface, reducing the impact of the rear-end connection structure on the antenna's low-axial-ratio characteristics. Finally, experimental verification shows that a circularly polarized antenna with an ultra-low axial-ratio is obtained. The isolation structure added in this invention effectively suppresses the backward propagation of surface current and the reflection from the rear-end metal surface without affecting the antenna's low-axial-ratio characteristics.

The utility model discloses a bipolar attenuator adopting a specifically packaged PIN diode, relates to the technical field of attenuators, and solves the technical problem that a traditional attenuator is difficult to consider both the size and the performance at the same time. The circuit comprises a positive-phase attenuation circuit and a negative-phase attenuation circuit which are vertically symmetrical, the input ends of the positive-phase attenuation circuit and the negative-phase attenuation circuit are electrically connected with a radio-frequency signal input end through a balun, and the output ends of the positive-phase attenuation circuit and the negative-phase attenuation circuit are electrically connected with a radio-frequency signal output end. The positive-phase attenuation circuit is electrically connected with a positive-phase control voltage, the negative-phase attenuation circuit is electrically connected with a negative-phase control voltage, and only one of the positive-phase attenuation circuit and the negative-phase attenuation circuit is conducted during use; according to the utility model, the performance requirement is met, the miniaturization requirement is also met, the application scene is diversified, and the circuit can be effectively protected.