44results about How to "Ease concentration" patented technology

A MOSFET includes a silicon carbide substrate, a buffer layer made of silicon carbide formed on the silicon carbide substrate, a drift layer made of silicon carbide of an n conductivity type formed on the buffer layer, a p type body region of a p conductivity type formed in the drift layer to include a main surface of the drift layer opposite to the buffer layer, a source contact electrode formed on the p type body region, and a drain electrode formed on a main surface of the silicon carbide substrate opposite to the buffer layer. A current path region having an impurity concentration higher than that of another region in the drift layer is formed in a region in the drift layer sandwiched between the buffer layer and the body region.

To prevent decrease in assembling precision of the differential device and enable avoiding decrease in transmission efficiency even when a tooth portion is formed in an outer peripheral portion of an input member. The differential device includes: a differential case; and a differential mechanism housed in the differential case and distributively transmitting rotational force of the differential case to a pair of mutually-independent output shafts. The differential case includes the input member including an input part which receives the rotational force, an end portion of the input member on at least one side in an axial direction thereof being opened, and at least one cover portion covering the opened end portion of the input member on the one side in the axial direction. The input member includes a fitting hole opened in an outer side surface of the input member, an outer peripheral portion of the cover portion being fitted in the fitting hole, and a support wall portion facing an inner side surface of the cover portion fitted in the fitting hole. The cover portion and the support wall portion are joined together by lap welding from outside of the cover portion, in a position separating inward in a radial direction of the input member from a fitting portion between the fitting hole and the cover portion.

A semiconductor apparatus includes a semiconductor substrate of a first conductivity type, a base region of a second conductivity type formed on a principal surface of the semiconductor substrate, a trench formed in a periphery of the base region, and an endless source region of the first conductivity type formed on a surface of the base region along the trench. In this semiconductor apparatus, the principal planes on side surfaces of the trench are composed of planes [100] and [110]. The interior angle of intersection of adjacent side surfaces of the trench is 135°. A minimum distance between the base region and the plane [110] facing each other through the source region is shorter than a minimum distance between the base region and the plane [100] facing each other through the source region.

There is provided a cartridge for a medication dispensing apparatus having a roll-rotating drum, the cartridge including a cartridge case having an open outlet formed on a bottom thereof so as to dispense medication; a drum installed inside of the cartridge case so as to selectively open and/or close the outlet; and a cartridge base having the cartridge case installed thereto, wherein projections projected downward and grooves recessed upward are formed on a bottom of the drum, alternatively, and a concave-convex part having protruding portion protruding upward are formed on a bottom surface of the cartridge case at intervals.

The present invention provides a non-aqueous electrolyte secondary battery that can suppress a drop in a flash point of an electrolyte solution even if the non-aqueous electrolyte secondary battery is used for a long time. The non-aqueous electrolyte secondary battery includes: an electrode body having a structure in which a positive electrode including a positive-electrode active material and a negative electrode including a negative-electrode active material are stacked with a separator interposed therebetween; a non-aqueous electrolyte solution containing a flame retardant; and an outer casing accommodating the electrode body and the non-aqueous electrolyte solution. The non-aqueous electrolyte solution in the electrode body has a flame retardant concentration lower than a flame retardant concentration in the non-aqueous electrolyte solution between the electrode body and the outer casing.

The present invention enables the rigidity of a bending load that acts on a T-shaped joining section to be improved. The joining structure has a second member 20 joined to a side section of the first member 10, forms a T shape, and has a first upper surface 11a and a flange 25 that are joined at a joining section 30. A long rib 15a is provided on the rear surface of the first upper surface 11a. The total length of the long rib 15a is set to at least twice the length to a joining section 30a from a contact section between the first member 10 and the second member 20. Of the angles formed between the extension directions of the long rib 15a and the longitudinal direction of the second member 20, the angle formed on the opposite side to the second member 20 is acute.

There has heretofore been a problem that desired withstanding characteristics cannot be obtained since a buried diffusion layer climbs up more than necessary in other heat treatment steps. In the present invention, after an N-type buried diffusion layer is formed, dry etching is performed in order to round off corner portions of a groove used for inter-element isolation and the like. Moreover, the groove is filled up with an NSG film formed by use of a CVD method, for example. Furthermore, a trench forming an isolation region is filled up with a HTO film and a polycrystalline silicon film, which are formed by use of the CVD method, for example. By use of the manufacturing method described above, it is possible to realize a semiconductor device capable of obtaining desired withstanding characteristics by preventing the N-type buried diffusion layer from climbing up more than necessary.

The invention provides a semiconductor device and a method of manufacturing same. The semiconductor device includes an element region and an end region, the element region having a semiconductor element formed therein, and the end region surrounding the element region. The semiconductor device includes a semiconductor substrate, a trench, an insulating layer, and a field plate conductive layer. The trench is formed in the semiconductor substrate so as to surround the element region in the end region. The field plate conductive layer is formed in the trench via the insulating layer.

The invention discloses a fortified vitamin beverage with zero pigment addition. The fortified vitamin beverage is prepared from components of water, high fructose corn syrup, white granulated sugar,crystalline trehalose, erythritol, passion fruit juice, pineapple juice, citric acid, sodium citrate, edible essence, a guarana extract, taurine, coffee powder, sodium cyclamate, acesulfame potassium,potassium sorbate, edible salt, nicotinic acid, and vitamins C, B6 and B12. The fortified vitamin beverage with zero pigment addition is adopted, no pigment is added, thus environmental friendlinessand safety are achieved, and the fortified vitamin beverage has the functions of sleepiness relieving, refreshing and energy supplementing.

The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.

This heat exchanger comprises: a pair of tanks that are provided at both ends of a plurality of stacked tubes (21) and have a longitudinal direction along the direction in which the tubes are stacked; and a connector (40) on the side surface of a connection tank (30), which is at least one of the pair of tanks, the connector being for connecting a pipe to the connection tank. The connection tank has a tubular shape having a flat portion (36) on at least a portion of the side surface. The connector is joined to the flat portion such that at least a portion of the facing surface (42) facing the flat portion projects from the flat portion in the lateral direction of the connection tank.