Semiconductor device

A semiconductor and housing technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problem of reducing the self-inductance of semiconductor devices, and achieve the effect of reducing the self-inductance and easing the concentration of magnetic flux.

Active Publication Date: 2018-11-23
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Or, since the upper surface of the resin case is provided with unevenness in order to ensure the creepage distance, it is difficult to further reduce the self-inductance of the semiconductor device after reaching a certain level.

Method used

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  • Semiconductor device
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Embodiment approach 1

[0026] Hereinafter, the first embodiment of the present invention will be described with reference to the drawings. figure 1 Is a perspective view of the semiconductor device according to the first embodiment, figure 2 It is a perspective view of the parallel plate 3 and the electrodes 6 and 7 of the semiconductor device according to the first embodiment.

[0027] Such as figure 1 with figure 2 As shown, the semiconductor device is a power module such as an IGBT module or a SiC module, and has a resin case 1, a parallel flat plate 3, and electrodes 6, 7. The resin case 1 is formed in a box shape, and a semiconductor element (not shown) is accommodated inside. Regarding the resin case 1, the upper surface of the front portion is formed to be located at a higher height position than the upper surface of the rear portion. A cover 2 is arranged at the upper end of the rear part of the resin case 1, and the cover 2 forms the upper surface of the rear part of the resin case 1.

[0028...

Embodiment approach 2

[0043] Next, the semiconductor device according to Embodiment 2 will be described. Image 6 It is a perspective view of the parallel plate 3 and the electrodes 6 and 7 of the semiconductor device according to the second embodiment. In addition, in the second embodiment, the same components as those described in the first embodiment are assigned the same reference numerals, and the description is omitted.

[0044] Such as Image 6 As shown, in Embodiment 2, the distance between the upper portions of the parallel plate 3 located between the two electrode lead-out portions 4a, 5a is greater than the distance between the portions other than the upper portion located between the two electrode lead-out portions 4a, 5a. width. More specifically, the upper part of the plate 5 that constitutes the parallel plate 3 between the electrode lead-out parts 4a, 5a is provided with a projecting part 12 projecting outward, so that the parallel plate 3 is located between the electrode lead-out part...

Embodiment approach 3

[0049] Next, a semiconductor device according to Embodiment 3 will be described. Figure 7 It is a perspective view of the parallel plate 3 and the electrodes 6, 7 of the semiconductor device according to the third embodiment, Picture 8 It is a plan view showing a portion of the parallel flat plate 3 of the semiconductor device according to the third embodiment located between the electrode lead-out portions 4a and 5a. In addition, in Embodiment 3, the same components as those described in Embodiments 1 and 2 are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0050] Such as Figure 7 , Picture 8 As shown, in Embodiment 3, the extension 11 is provided on the upper part of the plate 4 between the electrode lead-out parts 4a, 5a, and the extension 12 is provided on the plate 5 between the electrode lead-out parts 4a, 5a. Upper part. Therefore, the interval between the upper portions of the parallel plate 3 located between the electrode lead-out...

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PUM

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Abstract

The object is to provide a semiconductor device capable of reducing self-inductance. The semiconductor device has: a resin case (1), which accommodates a semiconductor element; a parallel plate (3), which is connected to the semiconductor element and arranged in the resin case (1), and is parallel to each other through an insulating material (10). and two electrodes (6, 7), which are respectively drawn out from the upper ends of the parallel plates (3), and arranged in the resin case (1) at predetermined intervals. ) on the upper surface. The upper ends of the parallel plates (3) between the two electrode lead-out parts (4a, 5a) from which the two electrodes (6, 7) lead out are respectively bent outward in directions away from each other.

Description

Technical field [0001] The present invention is related to reducing the self-inductance of semiconductor devices. Background technique [0002] Regarding power modules such as IGBT modules and SiC modules, there is a structure in which a plurality of terminals (electrodes) are arranged so that the total currents of each other cancel each other and become approximately zero. In this structure, in order to reduce the self-inductance of the semiconductor device, a plurality of terminals are arranged close to each other with an insulating material interposed therebetween, or adjacent portions of the plurality of terminals are arranged in parallel (for example, refer to Patent Document 1). [0003] Patent Document 1: Japanese Patent Application Publication No. 2013-21107 [0004] However, the terminals used to connect to the external circuit need to be opened from the inside of the insulating resin case to the outside. In order to ensure the creepage distance, the plurality of terminals ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/492
CPCH01L23/492H01L23/645H01L23/055H01L23/552
Inventor 塚本英树田畑光晴
Owner MITSUBISHI ELECTRIC CORP
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