Semiconductor device
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Publication Date
- 2018-11-23
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Abstract
Description
Technical field
[0001] The present invention is related to reducing the self-inductance of semiconductor devices. Background technique
[0002] Regarding power modules such as IGBT modules and SiC modules, there is a structure in which a plurality of terminals (electrodes) are arranged so that the total currents of each other cancel each other and become approximately zero. In this structure, in order to reduce the self-inductance of the semiconductor device, a plurality of terminals are arranged close to each other with an insulating material interposed therebetween, or adjacent portions of the plurality of terminals are arranged in parallel (for example, refer to Patent Document 1).
[0003] Patent Document 1: Japanese Patent Application Publication No. 2013-21107
[0004] However, the terminals used to connect to the external circuit need to be opened from the inside of the insulating resin case to the outside. In order to ensure the creepage distance, the plurality of terminals ...