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204results about How to "High color temperature" patented technology

Broad-spectrum A1(1-x-y)InyGaxN light emitting diodes and solid state white light emitting devices

A broad-spectrum Al(1-x-y)InyGaxN light emitting diode (LED), including: a substrate, a buffer layer, an N-type cladding layer, at least one quantum dot emitting layer, and a P-type cladding layer. The buffer layer is disposed over the substrate. The N-type cladding layer is disposed over the buffer layer to supply electrons. The quantum dot emitting layer is disposed over the N-type cladding layer and includes plural quantum dots. The dimensions and indium content of the quantum dots are manipulated to result in uneven distribution of character distribution of the quantum dots so as to increase the FWHM of the emission wavelength of the quantum dot emitting layer. The P-type cladding layer is disposed over the quantum dot emitting layer to supply holes. A broad-spectrum Al(1-x-y)InyGaxN yellow LED may thus be made from the LED structure of this invention, with an emission wavelength at maximum luminous intensity falling within a range of 530˜600 nm, and FWHM within a range of 20˜150 nm. After packaging an Al(1-x-y)InyGaxN blue LED to form a solid state white light emitting device, the mixing of blue light and yellow light would generate white light with a high CRI index, high luminous intensity and capable of various color temperature modulation.
Owner:GENESIS PHOTONICS

Single-chip white light emitting device

ActiveUS20050194608A1Enhance color temperature modulation capabilityReduce packaging costsNanoinformaticsSolid-state devicesQuantum dotLength wave
A single-chip white light emitting device, including: a substrate, a buffer layer, a first conductive cladding layer, a second conductive cladding layer, at least one broad-spectrum blue-complimentary light quantum dot emitting layer and at least one blue light emitting layer. The buffer layer is disposed over the substrate. The first conductive cladding layer is disposed over the buffer layer. The broad-spectrum blue-complimentary light quantum dot emitting layer is disposed between the first conductive cladding layer and the second conductive cladding layer. The blue-complimentary light quantum dot emitting layer includes plural quantum dots with an uneven character distribution, so as to increase FWHM of emission wavelength of the quantum dot emitting layer. The blue light emitting layers is disposed between the first and second conductive cladding layers, such that mixing of blue light and blue-complimentary light would generate white light. According to the single-chip white light emitting device of this invention, a single LED laminar structure is provided therein with a broad-spectrum blue-complimentary light quantum dot emitting layer and a blue light emitting layer, which are mixed to form an Al(1-x-y)InyGaxN single-chip white light emitting device with a high CRI, and high emission and are capable of color temperature modulation.
Owner:GENESIS PHOTONICS

Broad-spectrum A1(1-x-y)InyGaxN light emitting diodes and solid state white light emitting devices

A broad-spectrum Al(1-x-y)InyGaxN light emitting diode (LED), including: a substrate, a buffer layer, an N-type cladding layer, at least one quantum dot emitting layer, and a P-type cladding layer. The buffer layer is disposed over the substrate. The N-type cladding layer is disposed over the buffer layer to supply electrons. The quantum dot emitting layer is disposed over the N-type cladding layer and includes plural quantum dots. The dimensions and indium content of the quantum dots are manipulated to result in uneven distribution of character distribution of the quantum dots so as to increase the FWHM of the emission wavelength of the quantum dot emitting layer. The P-type cladding layer is disposed over the quantum dot emitting layer to supply holes. A broad-spectrum Al(1-x-y)InyGaxN yellow LED may thus be made from the LED structure of this invention, with an emission wavelength at maximum luminous intensity falling within a range of 530˜600 nm, and FWHM within a range of 20˜150 nm. After packaging an Al(1-x-y)InyGaxN blue LED to form a solid state white light emitting device, the mixing of blue light and yellow light would generate white light with a high CRI index, high luminous intensity and capable of various color temperature modulation.
Owner:GENESIS PHOTONICS

Semitransparent fluorescent powder/glass composite luminescent ceramic wafer and preparation method thereof

The invention relates to a semitransparent fluorescent powder/glass composite luminescent ceramic wafer and a preparation method thereof. The semitransparent fluorescent powder/glass composite luminescent ceramic wafer is obtained by carrying out 'pelletizing, compression moulding and sintering' on fluorescent powder and low-melting-point glass powder, wherein content of the fluorescent powder is 30-85wt%, and the content of the low-melting-point glass powder is 70-15wt%. The preparation method of the semitransparent fluorescent powder/glass composite luminescent ceramic wafer comprises the following steps: firstly, uniformly mixing fluorescent powder with glass powder in certain proportion, and adding a binding agent required by pelletizing and demoulding, so that pelletized powder of 60-100 meshes is obtained; secondly, carrying out compression moulding on the obtained pelletized powder by virtue of a mould, so that a green body of a certain shape is obtained; thirdly, carrying out heat treatment, namely carrying out glue drainage on the green body for 2-4 hours at the temperature of 300-395 DEG C, and sintering for 1-2 hours at the temperature of 395-410 DEG C, wherein the whole heat treatment process is carried out in the air atmosphere; and finally the fluorescent powder/glass composite luminescent ceramic wafer is obtained.
Owner:厦门百嘉祥微晶材料科技股份有限公司

Single-chip white light emitting device

A single-chip white light emitting device, including: a substrate, a buffer layer, a first conductive cladding layer, a second conductive cladding layer, at least one broad-spectrum blue-complimentary light quantum dot emitting layer and at least one blue light emitting layer. The buffer layer is disposed over the substrate. The first conductive cladding layer is disposed over the buffer layer. The broad-spectrum blue-complimentary light quantum dot emitting layer is disposed between the first conductive cladding layer and the second conductive cladding layer. The blue-complimentary light quantum dot emitting layer includes plural quantum dots with an uneven character distribution, so as to increase FWHM of emission wavelength of the quantum dot emitting layer. The blue light emitting layers is disposed between the first and second conductive cladding layers, such that mixing of blue light and blue-complimentary light would generate white light. According to the single-chip white light emitting device of this invention, a single LED laminar structure is provided therein with a broad-spectrum blue-complimentary light quantum dot emitting layer and a blue light emitting layer, which are mixed to form an Al(1−x−y)InyGaxN single-chip white light emitting device with a high CRI, and high emission and are capable of color temperature modulation.
Owner:GENESIS PHOTONICS

Red fluorophor as well as carbothermal reduction nitridation preparation method and application of red fluorophor

The invention relates to a red fluorophor as well as a carbothermal reduction nitridation preparation method and an application of the red fluorophor. The red phosphor is formed by carrying out solid solution on an activator A in the Ca[1-y]SryAlaSibNcOd substrate having the same crystal structure as that of the CaAlSiN3 crystalline phase, the chemical formula of red phosphor is Ca[1-vx / 2-y]SryAxAlaSibNcOd, wherein x is greater than 0 and less than or equal to 0.2, y is equal to or greater than 0 and less than or equal to 0.8, a is equal to or greater than 0.52 and less than or equal to 1, b is equal to or greater than 1 and less than or equal to 1.36, c is greater than 2.85 and less than or equal to 3 and d is equal to or greater than 0 and less than or equal to 0.2, the element A is at least one element selected from Eu, Mn, Yb, Ce, and Tb and v is representative of the electrovalence of the activator A ion and the preparation method of the red fluorophor comprises the following steps of maintaining CaCO3 powder and / or CaO powders and / or CaC2O4 powder, SrCO3 and / or SrO powder, Si3N4 powder and / or SiO2 powder, AlN powder, and single metal, oxide, nitride, fluoride, chloride, carbonate and / or nitrogen oxide powder of element A as starting materials in the presence of carbon powder as a reducing agent at a mixed atmosphere nitrogen and hydrogen or a mixed atmosphere of nitrogen, hydrogen and ammonia at a temperature range of 1550-1650 DEG C and sintering.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

Packaging method for realizing separation of fluorescent powder glue away from coating in light emitting diode (LED) package and application

The invention belongs to the light emitting diode (LED) packaging technology, and relates to a packaging method for realizing separation of fluorescent powder glue away from coating in LED package and an application of the method. The method is characterized in that: fluorescent powder glue is filled inside a gap between a primary lens and a secondary lens in the LED package, the thickness of the fluorescent powder glue is adjusted according to the size of the gap between the primary lens and the secondary lens to realize the uniform or nonuniform thickness. The primary lens can be semispherical or rectangular, or can be a free curved surface with internal top being a plane; and the outer surface of the secondary lens can be a free curved surface, and the inner surface of the secondary lens can be a semispherical shape, a rectangular shape, a trapezoid shape or other shapes with the top part being a plane. The packaging method can be used for controlling the geometric shape of the fluorescent powder layer in the LED package. Due to the adoption of the packaging method, the fluorescent powder glue can be away from the coating, and at the same time, the LED can satisfy the optical requirements such as brightness uniformity, high light emission efficiency, and uniformity of color temperature control and color control.
Owner:HUAZHONG UNIV OF SCI & TECH

Organic electroluminescence device capable of simulating sunlight and preparation method thereof

The invention relates to an organic electroluminescence device capable of simulating sunlight and a preparation method thereof, belonging to the technical field of electroluminescence devices. The device comprises a substrate, an anode, a cathode and an organic function layer arranged between the anode and the cathode, wherein the organic function layer comprises a blue fluorescent layer, a phosphor coating and a spacer layer, wherein the blue fluorescent layer and the phosphor coating are separated by the spacer layer; the blue fluorescent layer is made of a non-doped luminescent material with the light-emitting wavelength of smaller than 500nm; the phosphor coating comprises a red phosphor coating, wherein the red phosphor coating is made of a non-doped luminescent material with the light-emitting wavelength of greater than 585nm; and the spacer layer is formed by at least one of hole-type organic semiconductor materials whose hole mobility is greater than electronic mobility. The organic electroluminescence device has a CCT (Correlated Color Temperature) feature of the sunlight and can be prepared through a non-doped technology, and furthermore, the organic electroluminescence device has the advantages of simple structure and low requirements for the preparation process.
Owner:FIFTH ELECTRONICS RES INST OF MINIST OF IND & INFORMATION TECH +1
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