Resist underlayer film forming composition containing copolymer resin having heterocyclic ring

一种抗蚀剂下层、组合物的技术，应用在含有具有杂环的共聚树脂的抗蚀剂下层膜形成用组合物领域，能够解决难以获得抗蚀剂图案膜厚等问题

Active Publication Date: 2014-09-24
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to obtain a resist pattern film thickness sufficient for substrate processing, and it is necessary to make not only the resist pattern but also the resist underlayer film formed between the resist and the semiconductor substrate to be processed have a Functional process of mask during substrate processing

Method used

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  • Resist underlayer film forming composition containing copolymer resin having heterocyclic ring
  • Resist underlayer film forming composition containing copolymer resin having heterocyclic ring
  • Resist underlayer film forming composition containing copolymer resin having heterocyclic ring

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0170] 8.0 g of phenothiazine (manufactured by Tokyo Chemical Industry Co., Ltd.), 6.3 g of 1-naphthaldehyde (manufactured by Tokyo Chemical Industry Co., Ltd.), p-toluenesulfonic acid monohydrate (manufactured by Tokyo Chemical Industry Co., Ltd.) were added to a 100 ml pear-shaped bottle. system) 0.81g, 1,4-di Alkane (manufactured by Kanto Chemical Industry Co., Ltd.) 35.2 g. Then, the inside of the flask was replaced with nitrogen, and then heated and stirred under reflux for about 28 hours. After the reaction, use 1,4-di Diluted with 10 g of alkane (manufactured by Kanto Chemical Industry Co., Ltd.). The diluted solution was added dropwise to a mixed solution of methanol / 28% ammonia water (500 g / 5 g) to cause reprecipitation. The obtained precipitate was suction-filtered, the filter residue was washed with methanol, and then dried under reduced pressure at 85° C. overnight to obtain 5.8 g of novolak resin. The obtained polymer corresponds to formula (2-1). The weigh...

Synthetic example 2

[0172] 12.0 g of phenothiazine (manufactured by Tokyo Chemical Industry Co., Ltd.), 6.4 g of benzaldehyde (manufactured by Tokyo Chemical Industry Co., Ltd.), and p-toluenesulfonic acid monohydrate (manufactured by Tokyo Chemical Industry Co., Ltd.) were added to a 100 ml pear-shaped bottle 1.2g, 1,4-di Alkanes (manufactured by Kanto Chemical Industry Co., Ltd.) 112.8 g. Then, the inside of the flask was replaced with nitrogen, and then heated and stirred under reflux for about 26 hours. After completion of the reaction, it was diluted with 22 g of tetrahydrofuran (manufactured by Kanto Chemical). The diluted solution was added dropwise to 750 g of methanol to cause reprecipitation. The obtained precipitate was suction-filtered, the filter residue was washed with methanol, and then dried under reduced pressure at 85° C. overnight to obtain 2.2 g of novolak resin. The obtained polymer corresponds to formula (2-2). The weight average molecular weight Mw measured by polystyr...

Synthetic example 3

[0174] 10.0 g of phenothiazine (manufactured by Tokyo Chemical Industry Co., Ltd.), 9.1 g of 9-fluorenone (manufactured by Tokyo Chemical Industry Co., Ltd.), and p-toluenesulfonic acid monohydrate (manufactured by Tokyo Chemical Industry Co., Ltd.) were added to a 100 ml pear-shaped bottle. manufactured) 1.0 g, toluene (manufactured by Kanto Chemical Industry) 46.8 g. Then, the inside of the flask was replaced with nitrogen, and then heated and stirred under reflux for about 29 hours. After completion of the reaction, it was diluted with 10.4 g of tetrahydrofuran (manufactured by Kanto Chemical). The diluted solution was added dropwise to 800 ml of methanol for reprecipitation. The obtained precipitate was suction-filtered, the filter residue was washed with methanol, and then dried under reduced pressure at 85° C. overnight to obtain 12.4 g of novolac resin. The obtained polymer corresponds to formula (2-3). The weight average molecular weight Mw measured by polystyrene c...

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Abstract

[Problem] To provide a resist underlayer film forming composition for forming a resist underlayer film that has dry etching resistance and heat resistance at the same time. [Solution] A resist underlayer film forming composition which contains a polymer that has a unit structure represented by formula (1). In formula (1), it is preferable that R3 is a hydrogen atom, and both n1 and n2 are 0. A method for manufacturing a semiconductor device, which comprises: a step wherein an underlayer film is formed on a semiconductor substrate with use of a resist underlayer film forming composition of the present invention; a step wherein a hard mask is formed on the underlayer film; a step wherein a resist film is formed on the hard mask; a step wherein a resist pattern is formed by irradiation of light or electron beams and development; a step wherein the hard mask is etched with use of the resist pattern; a step wherein the underlayer film is etched with use of the patterned hard mask; and a step wherein the semiconductor substrate is processed with use of the patterned underlayer film.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film for lithography that is effective in processing a semiconductor substrate, and a method for forming a resist pattern and a method for manufacturing a semiconductor device using the composition for forming a resist underlayer film. Background technique [0002] Conventionally, in the manufacture of semiconductor devices, microfabrication has been performed by photolithography using a photoresist composition. The aforementioned microfabrication is a processing method in which a thin film of a photoresist composition is formed on a substrate to be processed such as a silicon wafer, and active light rays such as ultraviolet rays are irradiated on the thin film through a mask pattern in which a pattern of a semiconductor device is drawn. , develop, and use the obtained photoresist pattern as a protective film to etch a substrate to be processed such as a silicon wafer. Howe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G12/26C08L61/30G03F7/26G03F7/40H01L21/027
CPCC08L61/26G03F7/11C09D179/04C08G16/0275C09D161/26H01L21/3088C08L79/04G03F7/094C08G73/0627C08G12/26C08G73/06
Inventor 染谷安信桥本圭祐新城彻也西卷裕和柄泽凉坂本力丸
Owner NISSAN CHEM CORP
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