Resist underlayer film-forming composition which contains phenylindole-containing novolac resin

一种抗蚀剂下层、下层的技术，应用在图纹面的照相制版工艺、用于光机械设备的光敏材料、光学等方向，能够解决难以获得抗蚀剂图案膜厚等问题，达到充分蚀刻耐性的效果

Active Publication Date: 2014-12-03
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to obtain a resist pattern film thickness sufficient for substrate processing, and it is necessary to make not only the resist pattern but also the resist underlayer film formed between the resist and the semiconductor substrate to be processed have a Functional process of mask during substrate processing

Method used

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  • Resist underlayer film-forming composition which contains phenylindole-containing novolac resin
  • Resist underlayer film-forming composition which contains phenylindole-containing novolac resin
  • Resist underlayer film-forming composition which contains phenylindole-containing novolac resin

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0121] In the 100mL four-necked flask, add 2-phenylindole (4.00g, 0.021mol, produced by Tokyo Chemical Industry Co., Ltd.), 1-naphthaldehyde (3.23g, 0.021mol, produced by Tokyo Chemical Industry Co., Ltd.), Toluenesulfonic acid monohydrate (0.619 g, 0.0031 mol, manufactured by Kanto Chemical Co., Ltd.), and toluene (14.58 g, manufactured by Kanto Chemical Co., Ltd.) were added, then stirred, and the temperature was raised to 110°C to dissolve and start polymerization. After 50 minutes, it was left to cool to room temperature, and then reprecipitated in methanol (300 g, manufactured by Kanto Chemical Co., Ltd.). The obtained precipitate was filtered and dried in a vacuum dryer at 50° C. for 10 hours to obtain 4.5 g of the target polymer (formula (2-2), hereinafter abbreviated as PId-NA).

[0122] The weight-average molecular weight Mw of PId-NA measured in terms of polystyrene using GPC was 2400, and the polydispersity Mw / Mn was 1.35.

Synthetic example 2

[0124] In the 100mL four-neck flask, add 2-phenylindole (3.50g, 0.018mol, manufactured by Tokyo Chemical Industry Co., Ltd.), 1-formaldehyde pyrene (4.17g, 0.018mol, manufactured by Tokyo Chemical Industry Co., Ltd.), p-toluenesulfonic acid monohydrate (0.541g, 0.0027mol, manufactured by Kanto Chemical Co., Ltd.), and then add 1,4-di Alkane (15.25 g, manufactured by Kanto Chemical Co., Ltd.), was then stirred, and the temperature was raised to 110° C. to dissolve and start polymerization. After 24 hours, it was left to cool to room temperature, and then reprecipitated in methanol (250 g, manufactured by Kanto Chemical Co., Ltd.). The resulting precipitate was filtered and dried in a vacuum drier at 50° C. for 10 hours and further at 120° C. for 24 hours to obtain 3.7 g of the target polymer (formula (2-7), hereinafter abbreviated as PId-Py).

[0125] The weight-average molecular weight Mw of PId-Py measured in terms of polystyrene using GPC was 1600, and the polydispersity M...

Embodiment 1

[0131] 0.06 g of Megaface R-30 (manufactured by Dainippon Inky Chemical Co., Ltd., trade name) as a surfactant was mixed with 20 g of the resin obtained in Synthesis Example 1, and they were dissolved in 80 g of propylene glycol monomethyl ether acetate. to form a solution. Thereafter, it was filtered through a microfilter made of polyethylene with a pore size of 0.10 μm, and further filtered through a microfilter made of polyethylene with a pore size of 0.05 μm to prepare a resist underlayer film for use in a photolithography process using a multilayer film. solution of the composition.

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Abstract

[Problem] To provide a resist underlayer film-forming composition for use in a lithography process for the production of a semiconductor device, said composition having heat resistance. [Solution] A resist underlayer film-forming composition which contains a polymer that has a unit structure represented by formula (1). In the formula, both ring A and ring B represent benzene rings; n1, n2 and n3 are 0; each of R4 and R6 represents a hydrogen atom; and R5 represents a naphthyl group. A method for producing a semiconductor device, which comprises: a step of forming an underlayer film on a semiconductor substrate using the above-described resist underlayer film-forming composition; a step of forming a hard mask on the underlayer film; a step of forming a resist film on the hard mask; a step of forming a resist pattern by irradiation of light or an electron beam and development; a step of etching the hard mask with use of the resist pattern; a step of etching the underlayer film with use of the patterned hard mask; and a step of processing the semiconductor substrate with use of the patterned underlayer film.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film for lithography that is effective in processing a semiconductor substrate, and a method for forming a resist pattern and a method for manufacturing a semiconductor device using the composition for forming a resist underlayer film. Background technique [0002] Conventionally, in the manufacture of semiconductor devices, microfabrication has been performed by photolithography using a photoresist composition. The aforementioned microfabrication is a processing method in which a thin film of a photoresist composition is formed on a substrate to be processed such as a silicon wafer, and active light rays such as ultraviolet rays are irradiated on the thin film through a mask pattern in which a pattern of a semiconductor device is drawn. , develop, and use the obtained photoresist pattern as a protective film to etch a substrate to be processed such as a silicon wafer. Howe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G12/26
CPCG03F7/094G03F7/091C08G12/26C08G12/40G03F7/168G03F7/2037G03F7/2059H01L21/0271H01L21/31133
Inventor 西卷裕和坂本力丸桥本圭祐新城彻也染谷安信柄泽凉
Owner NISSAN CHEM CORP
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