Positive resist composition, manufacture method and application of the same

A positive photoresist and composition technology, which is applied to the positive photoresist composition and its preparation and application fields, can solve the problems of poor resolution, inability to generate pattern shapes, etc., and achieve high sensitivity, line edge roughness, etc. Low and high resolution effects

Inactive Publication Date: 2006-08-23
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0008] However, even though these methods can reduce the generation of standing waves, they are accompanied by poor resolution and cannot produce good pattern shapes

Method used

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  • Positive resist composition, manufacture method and application of the same
  • Positive resist composition, manufacture method and application of the same
  • Positive resist composition, manufacture method and application of the same

Examples

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Embodiment

[0145] The following shows synthesis examples, comparative synthesis examples, implementation examples and comparative examples. Although the present invention can be described more specifically, the present invention is not limited thereto.

[0146] [Synthesis example 1]

[0147] 101.1 g of 4-ethoxyethoxystyrene and 38.9 g of 4-tert-butoxycarbonylstyrene were placed in a 1 L flask, and 520 g of toluene was added as a solvent. The reaction vessel was cooled to -70°C under nitrogen, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 9.59 g of AIBN[2,2'-azobisisobutyronitrile] was added as a polymerization initiator, and after raising the temperature to 62°C, it was reacted for 20 hours. In this reaction solution, a mixture of 1200 mL of methanol and 50 mL of water was mixed dropwise, stirred for 15 minutes, and left to stand for 2 hours, then the lower layer [polymer layer] was separated. The obtained polymer l...

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Abstract

The present invention provides a positive resist composition wherein at least a polymer included in a base resin has a repeating unit with an acid labile group having absorption at the 248 nm wavelength light and the repeating unit is included with a ratio of 1 - 10 % of all repeating units of polymers included in the base resin. There can be provided a positive resist composition with equal or higher sensitivity and resolution than those of conventional positive resist compositions, and in particular, by which a pattern profile on a substrate with high reflectivity is excellent and generation of a standing wave and line edge roughness are reduced.

Description

technical field [0001] The present invention relates to a positive photoresist composition, for example, a chemically amplified positive photoresist composition suitable as a micropatterning material in the manufacture of VLSI, characterized by a high contrast alkali dissolution before and after exposure Speed, high sensitivity, high resolution, in addition, especially when used on highly reflective substrates, its pattern shape is good, which can reduce the occurrence of standing waves and reduce line edge roughness. Background technique [0002] In recent years, with the increasing density and speed of large-scale integrated circuits, the demand for finer pattern rules has also increased. It is generally believed that deep ultraviolet lithography technology is the next generation of ultra-fine processing technology. Deep ultraviolet lithography technology has a way to process 0.5 micron or less. [0003] In recent years, chemically amplified positive photoresist composit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039G03F7/16G03F7/20G03F7/32H01L21/027
CPCG03F7/0392C08F220/00
Inventor 武田隆信福田英次前田和规渡边聪
Owner SHIN ETSU CHEM CO LTD
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