Method and device for realizing patterning of graphene film by magnetic field assisted ultraviolet oxidation
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI JIAO TONG UNIV
- Publication Date
- 2020-03-06
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a method for preparing thin film patterns, in particular to a method and device for patterning graphene thin films by magnetic field-assisted ultraviolet oxidation; in particular, to a method for irradiating water molecules with ultraviolet light to decompose them into paramagnetic strong oxidation OH(X 2 Ⅱ) Free radicals, directional etching of graphene in a non-uniform vertical magnetic field, and a method and device for realizing high-quality graphene film patterning. Background technique
[0002] In the ultraviolet oxidation process using low-pressure mercury lamps and xenon lamp excimer discharge tubes as light sources, the ultraviolet radiation of 184.9nm and 172nm can decompose oxygen into oxygen atoms and ozone molecules. Oxygen atoms have strong oxidizing properties and can effectively The removal of organic pollutants from most metals, semiconductors, and insulating materials plays an important role in basic ...