Method and device for realizing patterning of graphene film by magnetic field assisted ultraviolet oxidation

Abstract

The invention provides a method for realizing patterning of a graphene film by magnetic field assisted ultraviolet oxidation. The method comprises the following steps of step 1, placing a magnetic field generator on a sample holder (8) of ultraviolet oxidation vacuum equipment, adjusting a magnetic field of the ultraviolet oxidation vacuum equipment to a preset magnetic field, wherein the preset magnetic field is a magnetic field in a reaction chamber, and the gradient direction of the magnetic field in the reaction chamber is perpendicular to the sample holder (8); step 2, placing a sample (13) with mask plates (14) placed on the surface on the sample holder (8), and adjusting the distance between the sample holder (8) and light sources (6) to preset distance; and step 3, discharging airin the reaction chamber (1). According to the method, by utilizing the magnetic field assisted ultraviolet light oxidation method, taking water molecules as oxidation sources, and applying a non-uniform magnetic field in the vertical direction to the surface of the sample, paramagnetic OH (X<2>II) free radicals generated by ultraviolet light are controlled do directional movement, and have an enhanced oxidation etching effect.

Description

technical field [0001] The present invention relates to a method for preparing thin film patterns, in particular to a method and device for patterning graphene thin films by magnetic field-assisted ultraviolet oxidation; in particular, to a method for irradiating water molecules with ultraviolet light to decompose them into paramagnetic strong oxidation OH(X 2 Ⅱ) Free radicals, directional etching of graphene in a non-uniform vertical magnetic field, and a method and device for realizing high-quality graphene film patterning. Background technique [0002] In the ultraviolet oxidation process using low-pressure mercury lamps and xenon lamp excimer discharge tubes as light sources, the ultraviolet radiation of 184.9nm and 172nm can decompose oxygen into oxygen atoms and ozone molecules. Oxygen atoms have strong oxidizing properties and can effectively The removal of organic pollutants from most metals, semiconductors, and insulating materials plays an important role in basic ...

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Problems solved by technology

However, due to the strong absorption of water vapor in this band of ultraviolet light and the scattering of other gases, the ultraviolet light is rapidly attenuated after being transmitted in the range of several millimeters or even tens of microns under atmospheric conditions. The effect of this ultraviolet light oxidation on the cleaning or oxidation of the sample surface is extremely weak. , leading to the UV oxidation method using water molecules as the oxidation source has not been promoted in traditional UV oxidation equipment

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