87 results about "Copper deposition" patented technology

The invention provides a method for manufacturing copper columns on a packaging substrate and the packaging substrate, and the method comprises the steps: sequentially covering a copper deposition layer and a graphical dry film on the surface of the packaging substrate, and vertically and continuously electroplating n first copper column groups of which the heights form an arithmetic progression on the graphic surfaces of the inner layer and the outer layer of a groove between the dry films; and the packaging carrier plate is rotated by 180 degrees, second copper column sets arranged in the height arithmetic progression are vertically and continuously electroplated on the first copper column sets correspondingly, the corresponding copper columns of the second copper column sets and the first copper column sets form target copper columns, and the heights of the target copper columns are the same. According to the invention, the first copper column group with equal height is arranged on the surface of the packaging carrier plate, and the second copper column group with equal height is arranged after up-down rotation, so that the single vertical continuous electroplating process does not exceed the single maximum copper plating amount, and the target copper column height is increased; meanwhile, increasing the height of the target copper column is beneficial to expanding the application range of the double-sided packaging process; in addition, redundant copper columns are arranged in the large plate before cutting, the residual copper rate of the whole plate is increased, the risk of plate burning and leakage is reduced, and the uniformity of the target copper columns is improved.

The application belongs to the technical field of circuit board preparation, in particular to a PCB circuit board production line, which comprises a cutting machine for cutting and opening fixed holes of an insulating substrate, a copper deposition tank for depositing a conductive layer on the surface of the substrate, a film laminating machine for laminating a film on the substrate and using a solution to produce a circuit pattern on the substrate, an electroplating device for tinning the copper foil of the substrate to prevent damage during etching, a tin stripping machine for cleaning and removing the protective tin on the surface of the substrate, a screen printing device for screen printing text on the PCB, and a rack for loading and transferring the PCB circuit board during processing. The rack can maintain better balance during transfer and will not have the problem of "head heavy and foot light". In addition, the distance between the moving plate and the moving plate and the distance between the moving plate and the fixed plate can be adjusted by the bidirectional screw rod, so that PCB circuit boards of various thicknesses can be loaded and transferred, improving the applicability of the device.

The invention discloses fading-washing-free plating-resistant ink for a chemical copper deposition process as well as a preparation method and application of the fading-washing-free plating-resistant ink. The washing-free anti-plating ink comprises the following components in parts by weight: (A) 40-80 parts of photocurable acrylate resin; (B) 0.1-5 parts of a nitrogen-containing plating-resistant functional monomer; (C) 10-40 parts of an inorganic filler; (D) 0.5 to 1.5 parts of a reactive leveling agent; (E) 0.5 to 1.5 parts of a non-reactive leveling agent; (F) 5-25 parts of a reactive diluent monomer; (G) 0.5-6 parts of a photoinitiator; and (H) 5-15 parts of an organic solvent. The washing-free plating-resistant ink is subjected to screen printing or jet printing to form a film, and a cured film layer does not form copper deposition in a chemical copper deposition solution, and can enter a subsequent electroplating process without washing or stripping treatment after copper deposition.

The embodiment of the invention relates to the technical field of PCB manufacturing, in particular to an AI server PCB manufacturing method and device, and the method comprises the steps: carrying out the copper reduction of a first copper reduction region of a multi-layer PCB and the grinding of a dry film hole sealing region of the multi-layer PCB before the copper deposition plate electric treatment of the multi-layer PCB, thereby eliminating the defects of a plating layer interface, guaranteeing the uniformity of the plate thickness, and improving the production efficiency. The defects of a plating layer interface are reduced, the etching flatness and the binding force are improved, and the electrical performance and the long-term reliability of a product are ensured.

The invention discloses a treatment process for high-copper sulfur concentrate waste sulfuric acid treatment, and relates to the technical field of waste sulfuric acid treatment, the treatment process comprises the following steps: S1, waste sulfuric acid pretreatment; s2, copper deposition reaction; s3, cobalt and nickel precipitation reaction; and S4, carrying out double-way optimization treatment. Through the integral treatment process, the high-quality gypsum can be obtained, heavy metals such as copper, cobalt and nickel are prevented from being mixed into the gypsum in the conventional treatment process, and a foundation for effectively utilizing the gypsum is laid. And heavy metals in the waste sulfuric acid are effectively converted into mineral products, so that the heavy metals such as copper, cobalt and nickel in the waste sulfuric acid are comprehensively utilized, and the solid waste generation amount of waste sulfuric acid treatment is reduced.

The application discloses a method for realizing TGV high-conductivity copper-clad by using a magnetic filtering vacuum arc metal film, and specifically comprises the following steps: S1, ultrasonic cleaning is performed on a glass through-hole substrate; S2, sub-etching cleaning treatment and activation of a substrate surface are performed on the glass through-hole substrate under a vacuum environment; S3, a Ti film layer is deposited on the glass through-hole substrate after the treatment in S2 by using a magnetic filtering vacuum cathode arc method; and S4, a Cu film layer is deposited on the Ti film layer under a low vacuum environment. By using the method provided by the application, a Ti undercoat layer is first deposited, the problem of poor adhesion between Cu and a glass substrate is solved, then copper-clad deposition is performed, in addition, the glass substrate can be conductive after Ti plating, so that the bias voltage can be increased, the energy of Cu ions entering the hole is larger, the thickness of the film plated on the hole wall is improved, the adhesion is stronger, and the conductivity is improved.

The invention discloses a preparation method of high-strength and high-toughness graphene-doped composite copper foil, which comprises the following steps: S1, treating graphene by adopting a high-energy ball milling method to obtain nano-sized defective graphene; s2, preparing a composite electrolyte containing the defective graphene, and adding the composite electrolyte into an industrial electrolytic cell after ultrasonic dispersion; s3, adding a compound additive into the electrolytic bath, and uniformly mixing through air blowing and ultrasound; s4, direct current is introduced, so that graphene and copper ions are co-deposited on the surface of the cathode roller to prepare a composite copper foil; and S5, carrying out acid pickling, water washing, drying, stripping and rolling on the composite copper foil. According to the invention, through doping of nano-scale defective graphene, on one hand, active sites are provided for copper deposition so as to refine grains, increase grain boundaries and hinder dislocation motion; on the other hand, due to the fact that the size of the defective graphene is matched with the height of copper grains, the strength can be improved through dislocation pinning and back stress strengthening, meanwhile, a multi-slip system is activated, dislocation storage is promoted to improve plasticity, the balance dilemma of the strength and the ductility of the copper foil is broken through finally, the copper foil has the high-strength and high-toughness characteristics, and the design requirement for the high energy density of the lithium ion battery is met.

The invention relates to the technical field of printed circuit boards, and discloses a process method for optimizing a copper lattice to improve the binding force of a plating layer, which comprises the following steps of: glue residue removal treatment: carrying out glue residue removal treatment on a drilled printed circuit board to form a roughened structure on the surface of a hole wall; activating treatment: adsorbing palladium catalytic particles on the coarsened pore wall surface to form a uniformly distributed catalytic center; and chemical copper deposition: immersing the activated plate in a chemical copper solution, controlling the reaction temperature to be 41-45 DEG C, maintaining the concentration of copper ions, alkali and a reducing agent through automatic compensation and liquid mixing, and depositing on the hole wall to form an initial copper layer. The technological method for optimizing the copper lattice to improve the coating binding force aims at solving the problems that in high-density interconnection and high-speed and high-frequency printed circuit board manufacturing, due to the fact that a traditional chemical copper plating technology lacks dynamic regulation and control capacity, the coating binding force is insufficient, the lattice structure is loose, and uniformity is poor.

Interconnect structures in a microelectronic device and methods of forming the same are described. The method comprises processing a substrate comprising a dielectric layer disposed thereon, the dielectric layer having one or more features including an opening, a sidewall, a top surface, a bottom. The method includes forming a cobalt liner layer having a thickness in a range of from 5 Ångstroms to 20 Ångstroms on the sidewall, the top surface, and the bottom using a physical vapor deposition process. The method includes doping an external portion of the cobalt liner layer with carbon, the external portion of the cobalt liner layer having a thickness in a range of from 1 Ångstrom to 5 Ångstroms to form a lined feature. Copper is deposited into the lined feature.

The invention discloses excellent chemical copper deposition equipment which comprises a tank body, a reaction tank located in the tank body and used for copper deposition reaction and an automatic adding device for automatically adding chemicals, and jet flow mechanisms used for spraying the chemicals are arranged at the upper end and the lower end in the tank body. A mounting device used for swinging and clamping products is arranged between the jet flow mechanisms in the reaction tank, the output end of the automatic adding device is connected with an auxiliary tank, and the auxiliary tank is connected with the jet flow mechanisms by arranging a jet flow system; the device is simple in structure and reasonable in design, the micro-nano bubble technology is adopted, micro-nano bubbles are micro bubbles with the diameter ranging from hundreds of nanometers to ten micrometers, and the micro-nano bubbles have the advantages of being high in gas-liquid mass transfer efficiency and solubility, cannot be clamped in holes compared with the holes with the diameter larger than one hundred micrometers, and are not prone to falling off. Oxygen can be provided, the problem that bubbles are blocked cannot occur, and meanwhile the hole penetrating capacity problem of a high-aspect-ratio product is solved through an efficient jet flow system.

The present application relates to lithium battery copper foil additive detection technical field, disclose a kind of lithium battery copper foil additive on copper deposition effect analysis method and its application.The analysis method includes: multiple times adding pre-configured test liquid to pre-configured simulation liquid, scans corresponding first volt-ampere characteristic curve after each addition The test liquid, according to multiple first volt-ampere characteristic curve determination the type of test liquid;According to the type determination result, select corresponding electrochemical method to measure the effect concentration of test liquid;Output the type of test liquid and corresponding effect concentration;Through multiple ladder sample addition+multiple volt-ampere characteristic curve combination, utilize the difference of electrochemical behavior of different additives to carry out type screening, based on the type determined again call the matching electrochemical model to carry out concentration inversion, can realize efficient, accurate qualitative screening and quantitative analysis, solve the problem of traditional method in qualitative inaccuracy, quantitative difficulty and low efficiency.

The present application relates to the technical field of hydrometallurgy, and discloses a method for preparing hydroxide from reverse copper-manganese solution, which comprises the following steps: controlling the potential of the reverse copper-manganese solution to carry out sulfidation copper deposition, so as to obtain a copper deposition solution; adjusting the pH of the copper deposition solution to 4-6, mixing the copper deposition solution with manganese powder to carry out manganese-zinc replacement, and obtaining zinc-manganese slag and a zinc deposition solution after sufficient reaction; mixing the zinc-manganese slag with sufficient zinc-dissolving alkali solution to carry out reaction, and obtaining manganese slag and the zinc-dissolving solution after solid-liquid separation; adjusting the pH of the zinc-dissolving solution to 7-8, and carrying out solid-liquid separation after sufficient reaction, so as to obtain zinc hydroxide. The method has a short overall process, good separation and purification effect, and can obtain crude manganese hydroxide and zinc hydroxide products.

The invention relates to the technical field of PCB manufacturing, and discloses a double-sided PCB optimized structure based on local pin header connection and a manufacturing method thereof, and the method comprises the steps: carrying out the partition circuit design of a double-sided PCB substrate, and obtaining a circuit layout of the double-sided PCB substrate; drilling the double-sided PCB substrate to obtain a target PCB substrate; the method comprises the following steps of: pressing a brass conductive needle into a needle position hole of an insulating base to manufacture a pin header connecting assembly, inserting the pin header connecting assembly into a mechanical through hole of a target PCB substrate to obtain a preassembly body, and performing wave soldering to obtain a double-sided PCB finished product. The interconnection nodes of the top layer and the bottom layer of the double-sided PCB are divided into a pin header connecting area and a signal transmission area; and only the via holes in the signal transmission area are metalized, so that the number of the via holes needing three high-cost processes of glue residue removal, chemical copper deposition and copper electroplating is reduced, the consumption of copper electroplating materials and the consumption of chemical liquid medicine are reduced, and meanwhile, the production period is shortened.

The invention discloses a method for manufacturing an ultrathin high-density carrier plate. The method comprises the following steps of: cutting a copper-clad plate according to the size of a jointed plate; carrying out LDD brownification treatment on the copper-clad plate; performing laser drilling on the copper-clad plate; after the brownification film is removed, plasma degumming treatment and copper deposition treatment are sequentially carried out on the copper-clad plate; forming an inner-layer circuit pattern on the copper-clad plate, then carrying out hole-filling electroplating treatment, and removing a plate surface copper layer at a non-circuit pattern position through etching after film stripping; laminating copper foils with the thickness of 9 microns on the two surfaces of the copper-clad plate through PP (Polypropylene), and then laminating to form a production plate; lDD browning processing is carried out on the production board; laser drilling is conducted on the production board; after the brownification film is removed, plasma degumming treatment and copper deposition treatment are sequentially carried out on the production board; an outer layer circuit pattern is formed on a production board, then hole filling electroplating processing is carried out, a board surface copper layer at a non-circuit pattern position is removed through etching after film stripping, and the ultra-thin high-density carrier board is manufactured. By the adoption of the method, the problem that BT-like plates cannot be machined through a conventional manufacturing process is solved.

The invention relates to a copper-indium bimetallic nanoflower catalyst and a preparation method and application thereof, and belongs to the technical field of electrochemical reduction catalysts. The method comprises the following steps: taking foamed nickel as a substrate, firstly mixing indium sulfate and dilute sulphuric acid to obtain an indium deposition solution, and electrically depositing a layer of metal indium under the indium deposition solution; then copper sulfate and dilute sulfuric acid are mixed to obtain a copper deposition solution, metal copper is further electrically deposited on the foamed nickel loaded with indium metal, the foamed nickel subjected to electro-deposition is cleaned and dried, and the copper-indium bimetallic nanoflower catalyst is obtained. The prepared copper-indium bimetallic nanoflower catalyst is a self-supporting material, shows excellent performance in nitrate radical electroreduction, and is high in ammonia production Faraday efficiency, large in current density and good in ammonia production rate performance. The synthesis method is easy to realize large scale, mild in reaction condition and good in application prospect.

A shockproof structure of a PCB copper deposition hanging basket comprises two guide rods which are oppositely arranged, a connecting rod is arranged between the guide rods, a first supporting part is arranged on one side of each guide rod, a second supporting part is oppositely arranged on the other side of each guide rod, and a containing space used for containing a PCB is formed between each first supporting part and the corresponding second supporting part. The anti-collision structure is applied to the hanging basket, the distance between the first supporting part and the second supporting part is utilized to support the PCB for copper deposition, and the anti-vibration plate is arranged on one side of the first supporting part, so that the contact area between the PCB and the hanging basket is increased, and the copper deposition efficiency is improved. And board edge breakage and warping caused by single-point stress of the PCB are reduced.

The application discloses a kind of advanced packaging structures of GaN integrated circuits, belong to semiconductor device packaging technical field.The structure includes copper substrate, resin insulating layer, GaN chip, second epoxy resin layer, copper circuit board structure and external filling layer;GaN chip is set on resin insulating layer by first epoxy resin layer, it has copper column pin;Copper circuit board structure is integrally formed by columnar copper metal structure being set in etching groove and being connected with copper column pin, and trapezoidal copper metal structure being set on the surface of resin layer, forms top electrical and thermal passage;External filling layer is filled between adjacent circuit structure.Preparation method includes: substrate processing, chip mounting, plastic package, surface roughening, laser etching forms groove, chemical copper deposition and copper plating, polishing, selective etching patterning and filling steps.The application significantly improves the thermal performance, electrical performance and reliability of packaging by double-sided heat dissipation and integrated copper interconnection structure.

The invention discloses a precision circuit board with high board thickness and high copper thickness and a processing method thereof, and the processing method comprises the steps: providing a processing board, the processing board is provided with two outer copper layers which are oppositely arranged, and the thickness of the two outer copper layers does not exceed 4 microns; respectively arranging a removable resin layer on the two outer copper layers to obtain a first intermediate plate; sequentially performing drilling, copper deposition electroplating, resin hole plugging and grinding treatment on the first intermediate plate to obtain a second intermediate plate with an interlayer conduction structure; after the resin layer is removed, an mSAP technology is used for manufacturing an outer layer circuit, and the outer layer circuit with the line width being 25 micrometers + / -5 micrometers, the line distance being 25 micrometers + / -5 micrometers and the copper thickness being not smaller than 35 micrometers is manufactured. The processing method is simple and reasonable, the obtained precise circuit board has the characteristics of high board thickness, high copper thickness, fine / precise circuit, good interlayer conduction performance and the like, and the market requirements of products such as tire pressure sensors and the like are met.

The utility model discloses a PCB (Printed Circuit Board) chemical copper deposition production line lifting conveying groove which comprises a groove body used for containing a copper deposition medicament; the clamp assembly comprises a mounting frame, a driving motor, a first gear, a second gear, a toothed chain and a clamp, the driving motor is arranged on the outer side wall of the groove body, an output shaft of the driving motor extends into the groove body to be connected with the first gear, the first gear is rotationally connected to the mounting frame, and the second gear is rotationally connected to the mounting frame; the mounting frame is vertically arranged in the groove body, the first gear is connected with the second gear through a toothed chain, a plurality of clamps are arranged on the toothed chain, and the clamps are annularly arranged. The copper deposition tank can solve the problems that the copper deposition tank is too long and occupies a large space.

The embodiment of the invention provides a copper foil, a preparation method thereof and a circuit substrate. The preparation method comprises the following steps: placing a raw foil in an electrolyte for copper deposition electrolysis to obtain a copper foil intermediate; performing surface treatment on the copper foil intermediate to obtain a copper foil; the electrolyte comprises H2SO4, Cu < 2 + >, Cl <-> and an additive; the additive comprises at least two of cellulose ether, a polyether derivative, a collagen compound and a polysaccharide compound. The method is used for achieving the effects of controlling the roughness of the non-treated surface of the copper foil and improving the peeling strength of the copper foil.

The invention belongs to the technical field of non-ferrous metal smelting, and discloses a resource collaborative utilization method of multi-source low-grade non-ferrous metal mining and metallurgy waste difficult to utilize. The zinc smelting leaching slag and the copper deposition slag are put into a copper smelting matte smelting furnace to be smelted, and smelting slag, smelting smoke dust and high-lead zinc copper matte are produced; adding the high-lead-zinc-copper matte into gold mill tailings and / or copper deposition slag for blowing to produce blowing crude copper, blowing smoke dust and blowing slag; converting slag is transferred to a fuming furnace in a hot state, the converting slag, aluminum electrolysis carbon slag and overhaul slag jointly complete the reduction fuming process, and high-nickel crude copper, fuming slag and fuming furnace smoke dust are produced. According to the method, green low-carbon resource circulation of metals such as Pb, Zn, Ni, Au and Ag in the low-grade nonferrous metal mining and metallurgy waste residues difficult to utilize is achieved.

The utility model discloses an alkaline etching liquid regeneration and copper recovery system, and relates to the technical field of electrolytic copper, the alkaline etching liquid regeneration and copper recovery system comprises an electrolytic tank, a material receiving bin and a push rod motor, the top of the material receiving bin is provided with a through groove, two sides of the through groove are fixedly connected with scrapers for scraping copper, two sides of the top of the material receiving bin are fixedly connected with barrier strips, and the barrier strips are fixedly connected with the push rod motor. And a side through groove is formed in one side of the electrolytic tank, the material collecting bin is slidably connected with the inner wall of the side through groove in a penetrating mode, the bottom of a push rod of the push rod motor is fixedly connected with a second supporting frame, and the bottom of the second supporting frame is fixedly connected with a second electrode plate. The problems that copper accumulation attached to the surface of a cathode plate can reduce the precipitation efficiency of copper in waste liquid, the cathode plate needs to be taken out for copper scraping, then the cathode plate is reinstalled and fixed in an electrolytic tank, the process of taking out and putting back is tedious, and the electrolytic efficiency is greatly reduced are solved.

The utility model discloses a PCB copper deposition wire upper and lower plate auxiliary device, and relates to the PCB production field, the PCB copper deposition wire upper and lower plate auxiliary device comprises a bottom plate and a support plate, two sides of the top of the support plate are provided with slide grooves, the slide grooves are internally provided with slide rods, the outer walls of the slide rods are sleeved with slide seats, the middle position of the bottom of the support plate is provided with a groove, and the bottom of the support plate is provided with a through hole. A motor is installed in the groove, the output end of the motor is connected with a rotating plate, and a pulling plate is rotationally connected between the rotating plate and the sliding base. Through the arrangement of the motor, the rotating plate, the pulling plates, the sliding seat and the clamping plate, when a PCB placed on the supporting plate needs to be clamped and limited, a worker can start the motor, the motor works to drive the rotating plate to rotate clockwise, then the two pulling plates are pulled to rotate, the pulling plates pull the sliding seat to move, and the sliding seat drives the clamping plate to move; the two clamping plates can move at the same time so that the PCB can be clamped and limited, the PCB is prevented from shaking or shifting in the upward moving process, and then the stability of the PCB is improved.

According to the present invention there is provided use of a lead electrode in a method for removing one or more impurities from a copper refinery electrolyte. Preferably, the method is a single-stage electrolyte purification / liberation (EPP) method. More preferably, the one or more impurities comprise arsenic. Also provided is a lead cathode, per se, for use in such a method. Preferably, the method comprises the steps of: providing an electrolyte having a concentration of arsenic that is sufficiently elevated as to affect the purity of the final copper cathode product; providing a cell adapted for performing a single- stage electrolyte purification / liberation (EPP) method; providing to the EPP cell a cathode comprised of about 90 to about 100 wt.% lead; performing the EPP method for a predetermined period, thereby to effect a copper / arsenic reduction step; and obtaining the resultant cupric arsenide deposit in a sludge layer at the bottom of the EPP cell.

This invention discloses an aqueous copper-ion battery electrolyte, its preparation method, and the copper-ion battery itself. The electrolyte comprises a copper salt, a solvent, and a copper halide salt additive. The copper salt is copper sulfate, and the solvent is deionized water. The concentration of the copper salt in the electrolyte is 0.5–1.5 mol / L. The copper halide salt additive is selected from one or more of copper fluoride, copper chloride, and copper bromide, and the total concentration of the copper halide salt additive in the electrolyte is 0.005–0.2 mol / L. When the electrolyte of this invention is used in an aqueous copper-ion battery, the halide ions in the copper halide salt additive can preferentially adsorb onto the surface of the metallic copper anode, inducing uniform copper deposition and inhibiting the formation of by-products. This significantly improves the coulombic efficiency and cycle stability of the aqueous copper-ion battery. Furthermore, the electrolyte preparation process is simple, low-cost, and environmentally friendly, making it suitable for large-scale energy storage scenarios.

A real-time monitoring system and method for inhibiting the evolution of arsine in a copper electrowinning arsenic removal process. The system comprises a PLC control module (1), a primary mother solution real-time monitoring module (2), an arsenic removal circulating solution real-time monitoring module (3), a arsenic removal post-solution real-time monitoring module (4) and a precise regulation and control module (5). By means of using copper-arsenic electrodeposition and concentration competition difference and using a arsenic removal circulating solution copper-arsenic concentration difference and limit value as constraint indicators, the PLC control module (1) controls the monitoring modules to acquire in real time the copper-arsenic concentrations in a primary mother solution, in a arsenic removal circulating solution and in a arsenic removal post-solution, calculates and analyzes a requirement for the copper-arsenic ion concentration in the arsenic removal circulating solution, and precisely regulates and controls the amount of a high-concentration copper-arsenic solution added to the primary mother solution so as to ensure that, after the arsenic removal circulating solution is periodically returned, the copper-arsenic ion concentration in the arsenic removal circulating solution is always in the optimal electrowinning arsenic removal range, improving arsenic deposition and reducing copper deposition, inhibiting the evolution of highly toxic gas arsine, precisely regulating and controlling arsenic removal post-solution diversion, and meeting enterprise safety production requirements while achieving efficient arsenic removal.

The invention provides a low-crosstalk interdigital capacitive sensing system for track identification. The system comprises a capacitive sensor based on a wave interdigital electrode, a multi-channel acquisition circuit, a main control unit and an upper computer configured with a track identification algorithm module which are connected in sequence, the capacitive sensor based on the wave interdigital electrode sequentially comprises a wave interdigital electrode layer, a first shielding structure, a wiring layer and a second shielding structure from top to bottom, and the first shielding structure and the second shielding structure both adopt lattice-shaped shielding layers matched with the wave interdigital electrode layer. Copper deposition via holes are formed among the wave interdigital electrode layer, the first shielding structure, the wiring layer and the second shielding structure, and a wire led out of the wave interdigital electrode layer is in wire communication with the wiring layer through the copper deposition via holes. The method is used for solving the problems of insufficient sensitivity and obvious parasitic capacitance and array crosstalk in a capacitive approach and track sensing system.

The utility model relates to a circuit board copper deposition wire degumming device which comprises a degumming box. Connecting bodies which are symmetrically arranged are mounted at the bottom of the hoisting equipment arranged above the glue removing box, transverse rods which are transversely arranged are fixedly connected to the bottoms of the connecting bodies, and fixing clamps which are symmetrically arranged are mounted at the bottoms of the transverse rods; a rapping mechanism is fixedly connected to the center of the lower portion of the hoisting equipment, and a transmission plate fixedly connected with the transverse rods on the two sides is arranged below the rapping mechanism; compared with the prior art, the vibrating device has the advantages that the motor is started to drive the rotating shaft to rotate, the rotating sleeve drives the connecting plates on the two sides to rotate, the connecting plates drive the vibrating plate to rotate through the rotating rod, the protective plate on one side of the vibrating plate makes contact with the transmission plate, and the purpose of vibrating the transmission plate is achieved; the acting force is transmitted to the circuit board through the transverse rod and the fixing clamp, vibration of the circuit board is achieved, stable contact between the glue removing liquid and the inner hole wall of the circuit board is achieved, glue removing is achieved, and the subsequent etching quality is guaranteed.

The invention discloses a circuit board electroless plating copper polishing device which comprises a workbench, a stand column, a carrier and a polishing mechanism, a lifting cavity is formed in the middle of the workbench, the carrier is installed in the lifting cavity, a transmission frame is arranged at the bottom of the carrier and is in threaded transmission with an adjusting lead screw, a negative pressure cavity is formed in the carrier, and the negative pressure cavity is in threaded transmission with the adjusting lead screw. The negative pressure cavity is connected with a negative pressure tank at the bottom of the workbench through an air pipe, the side wall of the negative pressure tank is connected with a vacuum pump through an air pipe, the vacuum pump is installed on an installation plate at the bottom of the workbench, a plurality of evenly-distributed adsorption holes communicated with the negative pressure cavity are formed in the upper surface of the carrier, and the electroless plating copper circuit board is placed on the carrier. The two positioning wheels are arranged on the two sides of the grinding frame for grinding and positioning, and the height of the carrier is adjusted through the lifting motor to adjust the grinding size; and meanwhile, the polishing wheel of a special structure is arranged, so that flexible polishing is achieved, gradual polishing of large-size and high-hardness positions is achieved, and the stability of the polishing process is improved.

The invention relates to the technical field of chemical preparation, in particular to a preparation method of a reducing agent material dimethylamino borane for pretreatment of horizontal chemical copper deposition in a PCB (printed circuit board) process. The preparation method comprises the following steps: firstly adding an organic solvent I in an inert gas atmosphere, cooling to 0 DEG C or below, sequentially adding dimethylamine hydrochloride and sodium borohydride for reaction, and adding a mixed solvent for continuous reaction after the reaction is performed for a period of time; and separating and purifying the reaction product to obtain the product dimethylamino borane. The dimethylamino borane is prepared under the reaction condition of minus 10 DEG C to 0 DEG C, dimethylamine hydrochloride is firstly added into an organic solvent (such as tetrahydrofuran), then sodium borohydride is controlled to be added in batches, and nitrogen protection is carried out in a drying stage, so that by-products can be avoided, and the yield of the dimethylamino borane is effectively increased.