Preparation method of NiCuZn ferrite thick film material used for Ka wave band circulator

A circulator and ferrite technology, applied in the field of electronic materials, can solve the problems of high microwave magnetic loss, low density, high porosity of thick film, etc.

Active Publication Date: 2016-01-13
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thick film prepared by casting process usually has hig

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of NiCuZn ferrite thick film material used for Ka wave band circulator
  • Preparation method of NiCuZn ferrite thick film material used for Ka wave band circulator
  • Preparation method of NiCuZn ferrite thick film material used for Ka wave band circulator

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0018] The main component of the NiCuZn ferrite thick film material of the present invention is calculated by oxide mole percentage, and the dopant component is calculated by mass percentage. The preparation method of NiCuZn ferrite thick film of the present invention comprises the following steps:

[0019] 1. Main ingredient formula

[0020] Using 48.0~49.0mol% Fe 2 o 3 , 19-21.0mol% ZnO, 4.0-5.0mol% CuO, 26.0-27.0mol% NiO;

[0021] 2. One ball milling

[0022] Mix the above powders evenly in a planetary ball mill for 1 to 3 hours;

[0023] 3. Pre-burning

[0024] Dry the ball abrasive obtained in step 2, and pre-fire it in a muffle furnace at 800-1000°C for 1-3 hours;

[0025] 4. Doping

[0026] Add the following additives to the powder obtained in step 3: 0.05-0.1wt% CaO, 0.05-0.1wt% Bi 2 o 3 ;

[0027] 5. Ball mill slurry

[0028] Add 40-50 wt% organic binder (such as L-S composite binder) and 40-50 wt% absolute ethanol to the powder obtained in step 4, and ball...

Embodiment 1

[0038] 1. Formula

[0039] The main ingredient formula is 49.0mol% Fe 2 o 3 , 20.0mol% ZnO, 5.0mol% CuO, 26.0mol% NiO;

[0040] 2. One ball milling

[0041] Mill the above powder in a planetary ball mill for 1 to 3 hours;

[0042] 3. Pre-burning

[0043] Dry the ball abrasive obtained in step 2, and pre-fire it in a muffle furnace at 900°C for 2.5 hours;

[0044] 4. Doping

[0045] Add additives to the powder obtained in step 3: 0.1wt% CaO, 0.1wt% Bi 2 o 3 ;

[0046] 5. Ball mill slurry

[0047] Add 40-50wt% organic binder and 40-50wt% absolute ethanol to the powder obtained in step 4, and ball mill in a planetary ball mill for 4-8 hours;

[0048] 6. Tape casting

[0049] Cast the slurry obtained in step 5 on a semi-automatic casting machine to cast a 50-60 μm raw film tape;

[0050] 7. Lamination

[0051] Laminate 20-22 layers of film on the raw film belt obtained in step 6 at 80°C and 6Mpa to make a green part with a thickness of 100-140 μm;

[0052] 8. Sinteri...

Embodiment 2

[0055] The difference between this embodiment and embodiment 1 is that the sintering temperature in step 8 is 1060°C.

[0056] The performance index of embodiment 1,2 is as table 1.

[0057] Table 1 embodiment 1~2 test result

[0058]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Saturation magnetizationaaaaaaaaaa
Curie temperatureaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

A preparation method of a NiCuZn ferrite thick film material used for a Ka wave band circulator belongs to the technical field of electronic materials. The preparation method includes the following steps: 1) preparation of main materials: employing the following raw materials: 48.0-49.0 mol% of Fe2O3, 19-21.0 mol% of ZnO, 4.0-5.0 mol% of CuO and 26.0-27.0 mol% of NiO; 2) primary ball milling; 3) pre-burning: pre-burning the materials at 800-1000 DEG C and maintaining the temperature for 1-3 h; 4) doping: adding the following additives: 0.05-0.1 wt% of CaO and 0.05-0.1 wt% of Bi2O3; 5) slurry material ball milling: adding 40-50 wt% of an organic adhesive and 40-50 wt% of anhydrous ethanol to the powder material and performing ball milling for 4-8 h; 6) tape casting: performing tape casting to the slurry material to obtain raw film belts being 50-60 [mu]m; 7) lamination: laminating the raw film belts by 20-22 layers and pressing the laminated raw film belts under 5-7 MPa to obtain a green film body being 100-140 [mu]m in thickness; and 8) sintering: performing temperature-maintained sintering to the green film body at 1020-1080 DEG C for 1-3 h. The ferrite material is high in saturated magnetization intensity (4[pi]Ms), is good in temperature stability, is high in resistivity and is low in microwave loss.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, in particular to the technical field of material preparation of NiCuZn ferrite thick film with narrow line width and high saturation magnetization. Background technique [0002] With the development of phased array radar "slimming" technology, the microwave ferrite devices used in it continue to develop in the direction of small size, light weight and chip type. Ferrite circulator is a key component in phased array radar, which plays an important role in signal unidirectional transmission and reverse isolation. Microstrip circulators are usually required to have wide frequency band, low insertion loss, high isolation, miniaturization, etc. characteristic. The Ka-band (26.5-40GHz) ferrite microstrip circulator complies with the development requirements of the device, and the current demand is increasing greatly. In order to meet the performance requirements of the circulator, ferrit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C04B35/26
Inventor 蒋晓娜陈丹余忠孙科兰中文燕周民
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products