Parallel-resistance feedback differential low-noise amplifier

A low-noise amplifier, feedback technology, used in differential amplifiers, DC-coupled DC amplifiers, negative feedback circuit layouts, etc., can solve adverse leakage, affect high-frequency performance of amplifiers, reduce amplifier output to input isolation, etc. problem, to achieve the effect of reducing leakage, good high-frequency characteristics, and small parasitic capacitance

Inactive Publication Date: 2012-11-21
JIANGSU CAS JUNSHINE TECH
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Problems solved by technology

However, this method has certain defects, because the resistors R1, R2 and capacitors C1, C2 of the feedback branch will not only introduce additional noise, but also introduce parasitic capacitance at the input and output of the amplifier, which affects the high frequency performance of the amplifier. ; At the same t

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  • Parallel-resistance feedback differential low-noise amplifier

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0028] Such as figure 2 As shown: the differential low noise amplifier of the present invention includes a main amplifying circuit, and the main amplifying circuit includes a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3 and a fourth MOS transistor M4, and the first MOS transistor M1, the second MOS transistor M2, the third MOS transistor M3 and the fourth MOS transistor M4 form a differential cascode circuit; the gate terminal of the first MOS transistor M1 is connected to the first differential input terminal RFINP through the first input matching network, The second MOS transistor M2 is connected to the second differential input terminal RFINN through the second input matching network, the source terminal of the first MOS transistor M1 and the source terminal of the second MOS transistor M2 are both connected to the tail cur...

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Abstract

The invention relates to a parallel-resistance feedback differential low-noise amplifier, which comprises a main amplification circuit. The main amplification circuit comprises a first MOS (metal oxide semiconductor) tube, a second MOS tube, a third MOS tube and a fourth MOS tube, a grid end of the first MOS tube is connected with a first differential input end through a first input matching network, the second MOS tube is connected with a second differential input end through a second input matching network, a drain end of the first MOS tube M1 is connected with the grid end of the first MOS tube through a first parallel-resistance feedback branch, and a drain end of the second MOS tube is connected with a grid end of the second MOS tube through a second parallel-resistance feedback branch; the first parallel-resistance feedback branch comprises a first resistor and a first capacitor connected with the first resistor in series; and the second parallel-resistance feedback branch comprises a second resistor and a second capacitor connected with the second resistor in series. The parasitic capacitance of the output end of the amplifier can be reduced, the isolation between the output end and the input end of the amplifier can be improved, good high-frequency characteristics can be achieved, and the circuit stability can be enhanced.

Description

technical field [0001] The present invention relates to a low noise amplifier, especially a resistance parallel feedback differential low noise amplifier, specifically a differential low noise amplifier used in a radio frequency front-end chip of a wireless communication receiver system, which belongs to the category of low noise amplifiers technology field. Background technique [0002] Today, with the rapid development of various wireless communication systems and technologies including mobile communication and wireless local area network, radio frequency integrated circuits (RFIC) have become a research and development hotspot in universities, research institutes and communication-related industries around the world. The development of these wireless communication systems has created a rapidly growing RFIC market. The reason why the radio frequency circuit has received worldwide attention and research is that it is the main bottleneck in the design of the entire wireless...

Claims

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Application Information

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IPC IPC(8): H03F3/45H03F1/34
Inventor 周仁杰甘业兵段炼何晓丰马成炎
Owner JIANGSU CAS JUNSHINE TECH
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