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128 results about "Transitional Region" patented technology

Areas of the axial skeleton where structure changes significantly leading to functional change. Transitional areas commonly include the following: occipitocervical region (OA), typically the OA-AA-C2 region is described. cervicothoracic region (CT), typically C7-T1. thoracolumbar region (TL), typically T10-L1. lumbosacral region (LS), typically L5-S1.

Quick-response conical micro-nano optical fiber humidity sensor and preparation method thereof

The invention discloses a quick-response conical micro-nano optical fiber humidity sensor and a preparation method thereof. The humidity sensor comprises a broadband light source, a conical micro-nano optical fiber structure and an optical spectrum analyzer which are sequentially connected, wherein the conical micro-nano optical fiber structure comprises a conical waist region and two conical transitional regions which are positioned at two ends of the conical waist region; the two conical transitional regions are connected with the broadband light source and the optical spectrum analyzer through a standard optical fiber respectively. The method comprises the following steps of: (1) removing a coating layer of a double-clad optical fiber to remain a bare optical fiber containing a fiber core, an inner cladding layer and an outer cladding layer; (2) fusing two ends of the bare optical fiber with the standard optical fiber through an optical fiber welding machine respectively; (3) performing fused biconical taper on the bare optical fiber to obtain the conical micro-nano optical fiber structure; (4) connecting the standard optical fiber of which the two ends are fused with the broadband light source and the optical spectrum analyzer to form the conical micro-nano optical fiber humidity sensor. The quick-response conical micro-nano optical fiber humidity sensor has a simple optical fiber structure, and is high in response speed, wide in measurement range and high in detection sensitivity.
Owner:JINAN UNIVERSITY

Surfacing-free centrifugal combined ultra-high anti-abrasion roll squeezer roller sleeve and manufacturing method thereof

ActiveCN103008050AImprove toughnessWith super high wear-resistant outer layerGrain treatmentsTransitional RegionPulp and paper industry
The invention discloses a surfacing-free centrifugal combined ultra-high anti-abrasion roll squeezer roller sleeve and a manufacturing method thereof. The roller sleeve comprises a roller sleeve body, wherein the roller sleeve body has a double-layer structure with an inner high-flexibility layer and an outer high abrasion resistance layer; and cast textures are arranged on the surface of the high abrasion resistance layer of the roller sleeve body. The roller sleeve has the characteristics that under the action of centrifugal force, the compactness of the roller sleeve is high, and metallurgical bonding of the inner layer and the outer layer is fully realized; a transitional region is smooth; by control over a cast organization subjected to 'less oxidization' thermal treatment, when the ultra-high abrasion resistance of the outer layer and the high flexibility of the core part are guaranteed, the impact resistance of the outer layer is improved; the centrifugally cast textures are basically the same as that of the outer layer; under the action of the centrifugal force, heavy points in steel liquid are subjected to offshoring segregation, so that the abrasion resistance of the textures is slightly higher than that of the outer layer; due to full metallurgical bonding under the action of the centrifugal force, casting defects such as cracks, impurities and air holes areavoided; ineffective forms such as falling and stripping which are caused by welding micro cracks are completely eliminated; the roller sleeve is maintenance free all the time; the production period is short; and large-scale production is realized.
Owner:河北奥木森陶瓷辊套有限公司

Junction terminal structure of transverse high-voltage power semiconductor device

The invention relates to the technical field of semiconductor power devices, in particular to a junction terminal structure of a transverse high-voltage power semiconductor device. According to the junction terminal structure, by increasing the total area of a P-type substrate and an N-type shift region, at the position of a curvature junction terminal, of the device, the device is prevented from being used up in advance in the region of the P-type substrate, and the withstand voltage of the device at the position of the curvature junction terminal is guaranteed. The junction terminal structure of the transverse high-voltage power semiconductor device has the advantages that the influences on the withstand voltage of the whole device from the curvature junction terminal can be obviously reduced, the electric field, in a transitional region, of the device cannot be too high, the withstand voltage of the device is optimized by changing the area of the shift region or the area of the P-type substrate, and the withstand voltage of the device is guaranteed accordingly. The junction terminal structure of the transverse high-voltage power semiconductor device is particularly suitable for junction structures of transverse high-voltage semiconductor devices.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Back electrode structured impurity barrier band detector and manufacturing method therefor

The invention provides a back electrode structured impurity barrier band detector. The back electrode structured impurity barrier band detector comprises a high-conductivity silicon substrate, a silicon-doped phosphorus absorption layer, a high-purity silicon barrier layer, an electrode transitional region, a positive electrode region, a negative electrode region and a metal substrate, wherein the silicon-doped phosphorus absorption layer is arranged on the high-conductivity silicon substrate; the high-purity silicon barrier layer is arranged on the silicon-doped phosphorus absorption layer; the electrode transitional region is arranged on the high-purity silicon barrier layer; the positive electrode region is arranged on the electrode transitional region; a positive electrode lead is arranged on the positive electrode region; the negative electrode region is arranged at the bottom of the high-conductivity silicon substrate; the negative electrode region is connected with the metal substrate through conductive silver paste; and a negative electrode lead is arranged on the negative electrode region. The back electrode structured impurity barrier band detector has the beneficial effects as follows: the negative electrode and the metal substrate are glued together through the silver paste; gold lines are led from the positive electrode and the metal substrate separately through a lead bonding process to be connected to adjacent pins of the metal substrate respectively; and therefore, deep hole etching to the negative electrode in the conventional preparation method is avoided, and the problem of damage to the device caused by the conventional etching process is solved.
Owner:NO 50 RES INST OF CHINA ELECTRONICS TECH GRP

Method for clinching thick metal workpieces, use of a clinching tool, and steel structural element produced accordingly

The invention relates to a method for the production of a load-bearing structural steel connection, wherein a clinching connection (13) is formed by means of a male die (20) and a female die (30) using local deformation, the connection connecting a first metal workpiece (6.1, 6.2) to a second metal workpiece (6.3, 6.4). For this purpose, the first metal workpiece (6.1, 6.2) and the second metal workpiece (6.3, 6.4) are first placed on top of each other on a processing surface of the female die and aligned. Subsequently the die of the male die is applied and lowered into the two metal workpieces (6.1, 6.2; 6.3, 6.4) placed on top of each other until the clinching connection (13) has been formed by plastic deformation. The first metal workpiece (6.1, 6.2) has a first workpiece thickness (tl), and the second metal workpiece (6.3, 6.4) has a second workpiece thickness (t2) that together result in a total workpiece thickness (tt), which is greater than 8 mm. The die is configured in a rotationally symmetrical manner with regard to the rotational axis (24) thereof and has a conically shaped transitional region (21, 22) tapering at an angle (W, W1, W2) in the lowering direction of the die.
Owner:FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV

Junction terminal structure of transverse high-voltage power semiconductor device

The invention relates to the technical field of semiconductor power devices, in particular to a junction terminal structure of a transverse high-voltage power semiconductor device. According to the junction terminal structure, by reducing the total area of a P-type substrate and an N-type shift region, at the position of a curvature junction terminal, of the device, the device is prevented from being used up in advance in the region of the P-type substrate, and the withstand voltage of the device at the position of the curvature junction terminal is guaranteed. The junction terminal structure of the transverse high-voltage power semiconductor device has the advantages that the influences on the withstand voltage of the whole device from the curvature junction terminal can be obviously reduced, the electric field, in a transitional region, of the device cannot be too high, the withstand voltage of the device is optimized by changing the area of the shift region or the area of the P-type substrate, and the withstand voltage of the device is guaranteed accordingly. The junction terminal structure of the transverse high-voltage power semiconductor device is particularly suitable for junction structures of transverse high-voltage semiconductor devices.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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