Back electrode structured impurity barrier band detector and manufacturing method therefor

Abstract

The invention provides a back electrode structured impurity barrier band detector. The back electrode structured impurity barrier band detector comprises a high-conductivity silicon substrate, a silicon-doped phosphorus absorption layer, a high-purity silicon barrier layer, an electrode transitional region, a positive electrode region, a negative electrode region and a metal substrate, wherein the silicon-doped phosphorus absorption layer is arranged on the high-conductivity silicon substrate; the high-purity silicon barrier layer is arranged on the silicon-doped phosphorus absorption layer; the electrode transitional region is arranged on the high-purity silicon barrier layer; the positive electrode region is arranged on the electrode transitional region; a positive electrode lead is arranged on the positive electrode region; the negative electrode region is arranged at the bottom of the high-conductivity silicon substrate; the negative electrode region is connected with the metal substrate through conductive silver paste; and a negative electrode lead is arranged on the negative electrode region. The back electrode structured impurity barrier band detector has the beneficial effects as follows: the negative electrode and the metal substrate are glued together through the silver paste; gold lines are led from the positive electrode and the metal substrate separately through a lead bonding process to be connected to adjacent pins of the metal substrate respectively; and therefore, deep hole etching to the negative electrode in the conventional preparation method is avoided, and the problem of damage to the device caused by the conventional etching process is solved.

Description

technical field [0001] The invention relates to a preparation process and packaging method of a detector, in particular to a preparation and packaging method of a blocking impurity strip detector with a back electrode structure, which is suitable for making a blocking impurity strip detector with low dark current and high response rate. Background technique [0002] The working band of the silicon-based barrier impurity band detector is 5 μm to 40 μm, which can realize the detection of very long wave to terahertz band. Its working mechanism is as follows: a thin intrinsic barrier layer is grown on the heavily doped absorbing layer to effectively suppress the dark current generated by the impurity energy band. The incident terahertz radiation directly passes through the barrier layer and is absorbed by the absorbing layer, which excites the electrons on the impurity band to transition to the conduction band. After the transition, the electrons are collected by the positive el...

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Problems solved by technology

The negative electrode and the metal substrate are bonded together with silver glue, and the gold wires are respectively drawn out from the positive electrode and the metal substrate through the wire bonding process, and connected to the adjacent pins of the metal substrate respectively, avoiding the need for deep hole engraving in the traditional preparation method Etching the negative electrode solves the problem of damage to the device caused by the traditional etching process, and can reduce the dark current; at the same time, the preparation of the device with the back electrode structure avoids the difficulty in the operation of drawing gold wires from the micropores in the traditional packaging method, and improves the efficiency of the device. negative electrode yield

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