Graphene buried heat radiation layer and vertical channel GaN MISFET cellular structure and preparation method
A heat-dissipating layer, graphene technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve the problems of high switching rate, low device on-resistance, etc. Polar on-resistance, the effect of reducing the length
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[0032] Hereinafter, the present invention will be described more comprehensively with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. However, the present invention can be embodied in many different forms, and should not be construed as being limited to the exemplary embodiments described herein. Rather, these embodiments are provided so that the present invention will be comprehensive and complete, and will fully convey the scope of the present invention to those of ordinary skill in the art.
[0033] Such as Figure 4-5 As shown, the present invention provides a graphene buried heat dissipation layer and a longitudinal channel GaN MISFET cell structure, which includes a substrate 11, an AlN isolation layer 12, a graphene buried heat dissipation layer 13, and an AlN composition from bottom to top. Core layer 14, GaN buffer layer 15, n-type heavily doped GaN layer 16, n-type GaN layer 17, p-type GaN electron blocking lay...
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