Graphene buried heat radiation layer and vertical channel GaN MISFET cellular structure and preparation method

Abstract

The invention discloses a graphene buried heat radiation layer and vertical channel GaN MISFET cellular structure and a preparation method; the cellular structure comprises a substrate, an AIN isolation layer, a graphene buried heat radiation layer, an AIN nucleating layer, a GaN buffer layer, a n type heavy doping GaN layer, a n type GaN layer, a P type GaN electronic stop layer, a non-doping GaN layer and an AlGaN barrier layer arranged from bottom to top; a cellular structure grating groove hole extends from the cellular structure top to the n type GaN layer; the gating groove hole side wall and bottom are respectively provided with a gate medium layer. An existing normally off GaN MISFET device cannot simultaneously have even and stable large threshold-voltage, low device conductive resistance and high switching rate; aiming at the normally off type GaN base III-V family material power device, the normally off GaN MISFET cellular structure with the vertical grid structure and the preparation method are provided so as to solve said problems, thus realizing GaN MISFET device stable large threshold-voltage normally off operations, and effectively reducing the device starting conduction resistance.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a graphene buried heat dissipation layer and a vertical channel GaNMISFET cell structure and a preparation method. Background technique [0002] As the core components of power converters such as DC / AC, AC / DC, DC / DC, and AC / AC, power switching devices have important application requirements in modern electronic equipment. They are important for realizing integrated control of related systems and ensuring system safety and reliability. The key core device for performance, stability and efficiency. GaN is a typical representative of the third-generation wide bandgap semiconductor material. Compared with the traditional semiconductor material Si, GaN has a wide bandgap, a large breakdown electric field, a high electron saturation drift velocity, a small dielectric constant, and good chemical stability. Features. GaN material heterostructure (typically such as AlGaN...

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Problems solved by technology

[0007] In view of the problems existing in the prior art, the object of the present invention is to provide a graphene buried heat dissipation layer and a vertical channel GaN MISFET cell structure to solve the problem that the existing normally-off GaN MISFET devices cannot simultaneously have uniform and stable Technical issues of large threshold voltage, low device on-resistance and high switching rate

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