Silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor

A thyristor and silicon carbide technology, which is applied in the field of silicon carbide MOS gate-controlled thyristors, can solve the problems of low P-type cathode injection efficiency and large forward conduction resistance, so as to increase cathode injection efficiency, reduce on-resistance, and reduce diffusion The effect of current

Active Publication Date: 2019-02-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to propose a silicon carbide MOS gate-controlled thyristor for the problems of low injection eff

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor
  • Silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor
  • Silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention will be described in detail below in conjunction with the drawings

[0019] Such as figure 2 As shown, the cell structure of the silicon carbide MOS gate-controlled thyristor of the present invention includes an anode structure, a gate structure, a drift region structure and a cathode structure; for a P-type silicon carbide MOS gate-controlled thyristor, its anode structure includes a P+ ohmic contact Area 8 and the N+7 on the right side thereof, as well as the metal layer 9 on the upper surface of the P+ ohmic contact area 8 and the N+ area 7; the gate structure mainly includes the N-well area 5, the P-well area 6, and the upper part of the N-well The oxide layer 10 and the gate metal 14, the N+ region 7 and the P+ ohmic contact region 8 in the anode structure are in the P-well region 6, the P-well region 6 is in the N-well region 5, the gate metal 14 and the oxide layer 10 Covers the N+ region 7, the P well region 6 and the N well region 6; the drif...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Doping concentrationaaaaaaaaaa
Login to view more

Abstract

The invention relates to the technology of power semiconductors, in particular to a silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor. The thyristor transforms the cathode region ofa conventional silicon carbide MCT (MOS Controlled Thyristor), and one N-IEB (N type-Injection Enhanced Buffer) layer is added below a P+ field stop layer. Since the N-IEB layer has low dosage concentration, the service life and the migration rate of a minority of current carriers in the region can be improved to increase the diffusion length of the minority of current carriers in a cathode structure so as to increase cathode injection efficiency. In addition, since a built-in electric field is generated due to a concentration difference between an N-type substrate and the N-IEB layer, the direction of the built-in electric field points to the N-IEB layer from the N-type substrate so as to prevent minority holes from diffusing to the N-type substrate from the N-IEB layer, so that minorityhole diffusion current is reduced, and therefore, the cathode injection efficiency is improved.

Description

Technical field [0001] The invention belongs to the technical field of power semiconductors, and particularly relates to a silicon carbide MOS gate-controlled thyristor Background technique [0002] Pulsed power technology has extremely important applications in the fields of national defense scientific research and high-tech, and the application scope is now expanding to industrial and civilian fields. MOS gate controlled thyristor is an important pulse power device used in pulse power technology. [0003] MOS Controlled Thyristor (MCT) is a hybrid power electronic device composed of a power MOSFET and a thyristor. It has a MOSFET structure to control the turn-on and turn-off of the device, and utilizes the turn-on time of the thyristor. The characteristic of injecting a large number of carriers into the drift region. Therefore, MCT has good conduction characteristics of thyristor and high dv / dt resistance. At the same time, it has the advantages of high input impedance of MOSFE...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/745
CPCH01L29/7455
Inventor 陈万军谯彬高吴昊张柯楠夏云刘超
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap