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Silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor

A thyristor and silicon carbide technology, which is applied in the field of silicon carbide MOS gate-controlled thyristors, can solve the problems of low P-type cathode injection efficiency and large forward conduction resistance, so as to increase cathode injection efficiency, reduce on-resistance, and reduce diffusion The effect of current

Active Publication Date: 2019-02-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to propose a silicon carbide MOS gate-controlled thyristor for the problems of low injection efficiency of the P-type cathode and large forward conduction resistance of the current conventional silicon carbide MOS gate-controlled thyristor.

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  • Silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor
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  • Silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor

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Embodiment Construction

[0018] The present invention will be described in detail below in conjunction with the drawings

[0019] Such as figure 2 As shown, the cell structure of the silicon carbide MOS gate-controlled thyristor of the present invention includes an anode structure, a gate structure, a drift region structure and a cathode structure; for a P-type silicon carbide MOS gate-controlled thyristor, its anode structure includes a P+ ohmic contact Area 8 and the N+7 on the right side thereof, as well as the metal layer 9 on the upper surface of the P+ ohmic contact area 8 and the N+ area 7; the gate structure mainly includes the N-well area 5, the P-well area 6, and the upper part of the N-well The oxide layer 10 and the gate metal 14, the N+ region 7 and the P+ ohmic contact region 8 in the anode structure are in the P-well region 6, the P-well region 6 is in the N-well region 5, the gate metal 14 and the oxide layer 10 Covers the N+ region 7, the P well region 6 and the N well region 6; the drif...

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Abstract

The invention relates to the technology of power semiconductors, in particular to a silicon carbide MOS (Metal Oxide Semiconductor) controlled thyristor. The thyristor transforms the cathode region ofa conventional silicon carbide MCT (MOS Controlled Thyristor), and one N-IEB (N type-Injection Enhanced Buffer) layer is added below a P+ field stop layer. Since the N-IEB layer has low dosage concentration, the service life and the migration rate of a minority of current carriers in the region can be improved to increase the diffusion length of the minority of current carriers in a cathode structure so as to increase cathode injection efficiency. In addition, since a built-in electric field is generated due to a concentration difference between an N-type substrate and the N-IEB layer, the direction of the built-in electric field points to the N-IEB layer from the N-type substrate so as to prevent minority holes from diffusing to the N-type substrate from the N-IEB layer, so that minorityhole diffusion current is reduced, and therefore, the cathode injection efficiency is improved.

Description

Technical field [0001] The invention belongs to the technical field of power semiconductors, and particularly relates to a silicon carbide MOS gate-controlled thyristor Background technique [0002] Pulsed power technology has extremely important applications in the fields of national defense scientific research and high-tech, and the application scope is now expanding to industrial and civilian fields. MOS gate controlled thyristor is an important pulse power device used in pulse power technology. [0003] MOS Controlled Thyristor (MCT) is a hybrid power electronic device composed of a power MOSFET and a thyristor. It has a MOSFET structure to control the turn-on and turn-off of the device, and utilizes the turn-on time of the thyristor. The characteristic of injecting a large number of carriers into the drift region. Therefore, MCT has good conduction characteristics of thyristor and high dv / dt resistance. At the same time, it has the advantages of high input impedance of MOSFE...

Claims

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Application Information

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IPC IPC(8): H01L29/745
CPCH01L29/7455
Inventor 陈万军谯彬高吴昊张柯楠夏云刘超
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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