Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Flexible direct-current generator based on organic semiconductor film

An organic semiconductor, DC generator technology, applied in the direction of triboelectric generators, etc., can solve the problems of low output current and power, hinder development and production application, and unfavorable miniaturization integration, and achieve stable device operation, simple structure and high voltage. Effect

Active Publication Date: 2020-03-27
ZHEJIANG UNIV
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the low output current and power of the friction generator, the output current is in the form of AC, there are still many factors such as strict requirements on material properties, the stability of the device structure, and other factors. It is conducive to miniaturization and integration, but also hinders its further development and production application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible direct-current generator based on organic semiconductor film
  • Flexible direct-current generator based on organic semiconductor film
  • Flexible direct-current generator based on organic semiconductor film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1) Take two flexible polyethylene terephthalate (PET) substrates of appropriate size, put the substrates in acetone solution and ethanol solution to clean the substrate surface in order to remove impurities attached to the surface , and use N 2 blow dry;

[0029] 2) Select one side as the front side on a PET flexible substrate, make an electrode on the surface, the material is a 50nm silver electrode, and prepare a polyvinylcarbazole (PVK) organic semiconductor film on the electrode surface by spin coating;

[0030] 3) Select one side as the front side on another PET flexible substrate, make electrodes on the surface, the material is 50nm silver electrode, and prepare poly[9,9-dioctylfluorene] (PFO) organic semiconductor on the electrode surface by spin coating method film;

[0031] 4) Press the front side of the flexible substrate spin-coated with PFO organic semiconductor thin film on the front side of the flexible substrate spin-coated with PVK organic semiconductor ...

Embodiment 2

[0034] 1) Take two indium tin oxide (ITO) flexible substrates of appropriate size, put the substrates into acetone solution and ethanol solution to clean the surface of the substrates, remove impurities attached to the surface, and clean them with N 2 blow dry;

[0035] 2) Select one side as the front side on an ITO flexible substrate, make an electrode on the surface, the material is a 50nm silver electrode, and then prepare a polyvinylcarbazole (PVK) organic semiconductor film on the electrode surface by spin coating;

[0036] 3) Select one side as the front side on another PET flexible substrate, make electrodes on the surface, the material is 50nm silver electrode, and prepare poly[9-(1-octylnonyl)-9H-carbazole] by spin coating method on the electrode surface (PCZ) organic semiconductor thin film;

[0037] 4) Press the front side of the flexible substrate spin-coated with PCZ organic semiconductor thin film on the front side of the flexible substrate spin-coated with PVK ...

Embodiment 3

[0040] 1) Take two indium tin oxide (ITO) flexible substrates of appropriate size, put the substrates into acetone solution and ethanol solution to clean the surface of the substrates, remove impurities attached to the surface, and clean them with N 2 blow dry;

[0041] 2) Select one side as the front side on an ITO flexible substrate, make an electrode on the surface, the material is a 50nm gold electrode, and prepare poly[2-methoxy-5-(2-ethylhexyl oxide) on the electrode surface by spin coating Base) -1,4-phenylacetylene] (MEH-PPV) organic semiconductor film;

[0042] 3) Select one side as the front side on another ITO flexible substrate, make electrodes on the surface, the material is a 50nm gold electrode, and prepare poly[9-(1-octylnonyl)-9H-carbazole] by spin coating on the electrode surface (PCZ) organic semiconductor thin film;

[0043] 4) Press the front side of the flexible substrate spin-coated with PCZ organic semiconductor film on the front side of the flexible ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of novel green renewable energy source acquisition. The invention discloses a flexible direct-current generator based on an organic semiconductor film. Theflexible direct-current generator is mainly composed of two kinds of organic semiconductor films on a flexible substrate. The Fermi energy levels of the two films are different, so when mutual contact occurs, space charges are charged to form a depletion layer, balance between diffusion current and drift current in a junction region is broken during relative sliding, the depletion layer is broken, junction region charges are discharged, and the charges are separated in an accelerated mode under the action of a built-in electric field, so that electron holes are well collected, accumulated andoutput current and voltage at an electrode, and continuous direct-current output is generated. The organic semiconductor film is an efficient hole or electron transport layer and can effectively transport hot carriers, so that mechanical energy is converted into high-voltage and high-density electric energy to be output, and power is directly supplied to various electronic devices and products.

Description

technical field [0001] The invention relates to a flexible DC generator based on an organic semiconductor thin film and a preparation method thereof, and belongs to the technical field of novel green renewable energy acquisition. Background technique [0002] In the 21st century, with the rapid development of intelligent electronic technology, all kinds of electronic products continue to develop in the direction of miniaturization, portability and integration with the pace of the times, constantly changing our daily life and working methods. While smart electronic products accompany our social life day and night, the energy problems of a large number of smart electronic devices are coming to us. All kinds of electronic equipment and electronic products require continuous energy supply. Traditional battery and other power supply devices have a certain service life and need to be replaced frequently, and even have certain safety hazards. In this regard, the need to find more ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02N1/04
CPCH02N1/04
Inventor 林时胜陆阳华余旭涛
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com