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Low-temperature-drift current source circuit insensitive to power source

A technology of current source and low-temperature drift, which is applied in the field of circuits, can solve problems such as increased circuit complexity, increased risk of abnormal startup, and reduced reliability of current bias circuits, so as to reduce influence, sensitivity, and temperature drift The effect of the coefficient

Inactive Publication Date: 2017-11-24
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The current current source circuit is generally a current bias circuit, but at present, when designing a current bias circuit, less consideration is given to power supply sensitivity, low temperature drift coefficient, and circuit reliability. The above considerations often lead to some performance of the current source circuit being affected during use
[0003] In addition, some current bias circuits often need to design a startup circuit in order to provide high-quality current bias. However, due to the existence of the startup circuit, the complexity of the circuit increases, and the risk of abnormal startup also increases. Correspondingly, the current Reduced reliability of the bias circuit

Method used

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  • Low-temperature-drift current source circuit insensitive to power source
  • Low-temperature-drift current source circuit insensitive to power source
  • Low-temperature-drift current source circuit insensitive to power source

Examples

Experimental program
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Effect test

Embodiment 1

[0042] see figure 1 , is a circuit diagram of a low-temperature drift current source circuit that is insensitive to power supply provided in this embodiment.

[0043] The low-temperature drift current source circuit which is insensitive to power supply includes: comprising: a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, a first resistor R1, a second resistor R2 and The third resistor R3.

[0044] The first MOS transistor M1 is an NMOS transistor, the gate of the first MOS transistor M1 is grounded through the second resistor R2, the source of the first MOS transistor M1 is grounded, and the drain of the first MOS transistor M1 is connected to the power supply VCC through the first resistor R1 .

[0045] The second MOS transistor M2 is an NMOS transistor, the gate of the second MOS transistor M2 is connected to the power supply VCC through the first resistor R1, the source of the second MOS transistor M2 is ground...

Embodiment 2

[0069] see image 3 , is a circuit diagram of another low-temperature drift current source circuit that is insensitive to power supply provided in this embodiment.

[0070] The low-temperature drift current source circuit which is insensitive to power supply includes: the seventh MOS transistor M7, the eighth MOS transistor M8, the ninth MOS transistor M9, the tenth MOS transistor M10, the eighth resistor R8, the ninth resistor R9 and Tenth resistor R10.

[0071] The seventh MOS transistor M7 is a PMOS transistor, the gate of the seventh MOS transistor M7 is connected to the power supply VCC through the ninth resistor R9, the source of the seventh MOS transistor M7 is connected to the power supply VCC, and the drain of the seventh MOS transistor M7 is connected to the eighth resistor R8 is grounded.

[0072] The eighth MOS transistor M8 is a PMOS transistor, the gate of the eighth MOS transistor M8 is grounded through the eighth resistor R8, the source of the eighth MOS tran...

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PUM

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Abstract

The invention discloses a low-temperature-drift current source circuit insensitive to a power source. The circuit makes a second MOS pipe always in a normal working state without circuit starting, the voltage influence of the power source on the current going across a second resistor is smaller, correspondingly the influence of power source voltage on the current output by the current source circuit is reduced, and the sensitivity of the current source circuit to the power source is reduced. In addition, in the working process of the current source, threshold voltages of a third MOS pipe and a fourth MOS pipe which are largely influenced by the temperature are mutually offset, accordingly the current going across a third resistor is not influenced by the temperature, the influence of temperature change on the current output by the threshold voltage is thus reduced, and the temperature drift coefficient of the current source circuit is reduced.

Description

technical field [0001] The invention relates to the field of circuits, in particular to a low-temperature drift current source circuit which is insensitive to power supply. Background technique [0002] The current current source circuit is generally a current bias circuit, but at present, when designing a current bias circuit, less consideration is given to power supply sensitivity, low temperature drift coefficient, and circuit reliability, and due to the lack of control in the design process The above considerations often lead to some performance of the current source circuit being affected during use. [0003] In addition, some current bias circuits often need to design a startup circuit in order to provide high-quality current bias. However, due to the existence of the startup circuit, the complexity of the circuit increases, and the risk of abnormal startup also increases. Correspondingly, the current The reliability of the bias circuit is reduced. Contents of the i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 苗林
Owner YANGTZE MEMORY TECH CO LTD
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