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Non-bandgap high-precision reference voltage source

A reference voltage, non-bandgap technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., to achieve the effects of excellent performance, simple structure and wide application range

Inactive Publication Date: 2009-11-04
NAT UNIV OF DEFENSE TECH
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  • Abstract
  • Description
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Problems solved by technology

[0004] The problem to be solved by the present invention is that: Aiming at the technical problems existing in the existing bandgap reference, the present invention provides a high-precision reference voltage source design with simple structure and fully compatible with common CMOS technology

Method used

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Embodiment Construction

[0014] Such as figure 1 As shown, the circuit of the present invention can be divided into three parts: a reference current generation circuit, a reference voltage generation circuit and a start-up circuit. The reference current generation circuit further includes reference current generation circuits (M3, M4, M5, M6, R0) independent of power supply and cascode current mirrors (M1, M2, M3, M4). According to the circuit diagram, we can know that V GS6 =V GS5 +I D6 R 0 . Using the saturation region current formula to solve for V GS6 , V GS5 And brought in, the following relationship can be obtained:

[0015] I = 2 u n c ox k ( w / l ) n ...

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Abstract

The invention discloses a non-bandgap high-precision reference voltage source realized by utilizing a principle that the changes of electron mobility and MOS tube threshold voltage to temperature are in a reverse trend. The reference voltage source consists of three circuits: (1) a start-up circuit which is mainly used for removing circuit deadlock states possibly occurring in the process of electrifying the circuit; (2) a reference-current generating circuit which generates a reference current that does not change with power-supply voltage; and (3) a reference-voltage generating circuit which utilizes the reference current produced by mirror images, adopts a method of mutually regulating positive temperature coefficients of the electron mobility and negative temperature coefficients of the MOS tube threshold voltage, and realizes the reference voltage output with zero-temperature coefficients. The reference voltage source can effectively inhibit output from changing with the changes of temperature and the power-supply voltage, can be completely compatible with the common CMOS process, and has the advantages of simple structure, small chip area, large output range and high precision at the same time, thereby greatly reducing system cost.

Description

technical field [0001] The present invention mainly relates to the field of reference voltage source design for analog integrated circuits, in particular to a non-bandgap high-precision reference voltage source designed using the principle that electron mobility and MOS transistor threshold voltage have a reverse trend to temperature changes . Background technique [0002] The reference voltage source is an important part of today's integrated circuits and is widely used in digital, analog, and digital-analog hybrid circuits. Especially in such as random dynamic memory, A / D, D / A converter, all kinds of digital-analog hybrid IC is indispensable. Therefore, a high-performance reference voltage source with high power supply rejection ratio, low temperature drift, and CMOS process compatibility has become the focus of IC designers. [0003] At present, there are many types of reference voltage sources in integrated circuits, and bandgap references are widely used in the indust...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/30
Inventor 陈怒兴肖海鹏赵振宇陈吉华李少青马卓张民选郭阳方粮白创刘梅黄冲李俊丰
Owner NAT UNIV OF DEFENSE TECH
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