45 results about "Zero temperature coefficient" patented technology

The utility model provides a band-gap reference circuit, a chip and electronic equipment, and belongs to the technical field of electronics. The band-gap reference circuit comprises a band-gap reference voltage generation module, a positive temperature coefficient current generation module, a negative temperature coefficient current generation module, a zero temperature coefficient current generation module and a current comparison module; the positive temperature coefficient current generation module is connected with the band-gap reference voltage generation module, the negative temperature coefficient current generation module is connected with the positive temperature coefficient current generation module, and the zero temperature coefficient current generation module is respectively connected with the positive temperature coefficient current generation module and the negative temperature coefficient current generation module; the first input end of the current comparison module is connected with the zero temperature coefficient current generation module, the second input end is connected with the positive temperature coefficient current generation module or the negative temperature coefficient current generation module, and the output end is connected with the band-gap reference voltage generation module. According to the invention, self-calibration of temperature compensation is carried out, and the problem of high temperature drift coefficient is reduced.

The invention relates to the technical field of high-voltage integrated circuits, in particular to a high-precision temperature detection module and a high-voltage integrated circuit with the high-precision temperature detection module. The current correction circuit comprises a resistor R3a, a resistor R3b, an MOS tube M3 and a triode Q3; one ends of the R3a and the R3b are connected with an operational amplifier OP of the reference current source circuit, and the other ends of the R3a and the R3b are connected with the MOS tube M3; the MOS tube M3 is respectively connected with a reference current source circuit VCC power supply and the MOS tube M2; and the Q3 is respectively connected with the other ends of the R3a and the R3b and the M3. According to the invention, constant current with zero temperature coefficient is output, so that a temperature detection result is more accurate, effective temperature protection of the HVIC can be realized, an integrated intelligent power driving chip of a high-voltage integrated circuit and an application system of the integrated intelligent power driving chip are prevented from being damaged by high temperature, and the reliability of the intelligent power driving chip HVIC is improved.

A circuit for providing temperature compensation to sense signals in a single-ended DC resistance (DCR) sensing network for a multiphase switching power supply includes a temperature compensation calculator circuit generating a compensation adjust signal indicative of a sensed temperature; a compensating impedance network receiving the positive sense signals for all the phases and generating a correction signal for each phase in response to at least the positive sense signal for each phase and the compensation adjust signal; an average circuit coupled to average the correction signals of all phases, where copies of the average correction signal are applied to modify the positive sense signals; and an amplifier circuit receiving a summed positive sense signal being the sum of the modified positive sense signals for all the phases and a summed negative sense signal to generate an output signal having substantially zero temperature coefficient over the first frequency range.

The improved UVLO circuit comprises a band-gap reference circuit and a selection comparison protection circuit, the band-gap reference circuit is used for outputting band-gap reference voltage with a zero temperature coefficient, and the selection comparison protection circuit comprises a selection circuit, a comparison circuit and a voltage sampling circuit. And the selection comparison protection circuit determines whether the output of the voltage sampling circuit is used as the input of the comparison circuit based on the selection circuit, and carries out under-voltage protection by comparing the output of the comparison circuit with the output of the band-gap reference circuit.

The present invention discloses a negative temperature drift bandgap reference circuit suitable for a large dynamic range logarithmic amplifier. The circuit relates to the field of integrated circuit technology and includes a startup circuit for providing a startup current; and a reference core circuit comprising a plurality of transistors and a plurality of resistors, the transistors being electrically connected to the resistors. The reference core circuit is configured to provide a reference voltage with a negative temperature coefficient, biasing a rectifier, thereby ensuring an extremely low DC bias current temperature coefficient of the rectifier at temperatures between -55°C and 125°C. Compared to conventional zero temperature coefficient bandgap reference circuits, the present invention is more suitable for large dynamic range logarithmic amplifiers, enabling them to exhibit excellent temperature characteristics, including slope and logarithmic consistency error.

The present invention discloses a method for improving the temperature immunity of digital circuits and an electronic device. The method includes: selecting standard cells for transient simulation; tracking the device current trajectory and voltage trajectory and selecting voltage sampling points; calculating the effective drive current and the temperature dependence of the device; determining the zero-temperature delay operating point; establishing a zero-temperature delay operating point database for the standard cell library and determining the zero-temperature delay operating point from the device level to the standard cell level; using the statistical average of the zero-temperature coefficient points of the standard cell library as the initial power supply voltage to complete the logic synthesis process; generating the gate-level netlist of the circuit according to the timing analysis result of the logic synthesis; performing physical design according to the gate-level netlist, converting the gate-level netlist into a layout, and determining the optimal zero-temperature delay operating point for large-scale digital circuits. The present invention can alleviate the thermal effect in digital circuits and reduce the temperature dependence of electrical characteristics, and can be widely applied to the field of integrated circuit technology.

The invention provides a temperature compensation method of a three-terminal adjustable shunt reference voltage source. The method comprises the following steps: obtaining a zero temperature coefficient point measured value of a reference voltage of the three-terminal adjustable shunt reference voltage source in a set temperature interval; according to the drift direction of the measured value of the zero temperature coefficient point, the base emitter voltage variation of two input tubes of a differential amplifier in the three-end adjustable shunt reference voltage source is adjusted, so that the drift distance of the measured value of the zero temperature coefficient point is reduced, and temperature compensation is achieved. By means of the temperature compensation method of the three-end adjustable shunt reference voltage source, the problem that in the prior art, the reference voltage of a voltage reference chip exceeds the error range along with temperature change is solved.

The invention discloses a composite material with a near-zero temperature coefficient. The composite material comprises composite particles with three layers of core shells, the composite particle comprises a metal organic framework serving as an inner core, a conductive carbon transition layer serving as a middle layer and a gradient doped tin oxide layer serving as a shell, and the resistance temperature coefficient symbols of materials of the inner core and the shell are opposite within the range of 0-80 DEG C. According to the composite material with the near-zero temperature coefficient, a three-layer core-shell structure of a metal organic framework core / a conductive carbon transition layer / a gradient doped SnO2 shell is adopted, mutual offset of temperature coefficients can be achieved in the material, and therefore drifting of baseline resistance generated along with fluctuation of the environment temperature is reduced.

The present application relates to a clock signal generating device and an integrated circuit. The device includes: an oscillation module configured to provide a plurality of clock signals in response to an enable signal. The oscillation module includes: a first oscillation unit including a resistor device having a negative temperature characteristic and configured to generate a first clock signal having a first phase, and a second oscillation unit including a resistor device having a positive temperature characteristic and configured to generate a second clock signal having a second phase. The first oscillation unit generates a third clock signal under the influence of the second clock signal, and the second oscillation unit generates a fourth clock signal under the influence of the first clock signal. The first to fourth clock signals have the same temperature characteristic; a clock output module coupled to the oscillation module and configured to generate a corresponding clock signal group based on the plurality of clock signals. The solution of the present application can generate a frequency with zero temperature coefficient, has good temperature stability, and at the same time the frequency is adjustable and the temperature characteristic is adjustable.

The utility model relates to a zero temperature coefficient generation circuit capable of inhibiting process drift, and aims to improve the process anti-interference performance and the temperature stability of reference current. The circuit comprises a reference circuit, an operational amplifier, a first MOS tube, a second MOS tube, a first resistor and a second resistor. Stable reference voltage is provided through the reference circuit, and the operational amplifier adjusts the grid voltage of the first MOS tube so as to control the precision of current. Meanwhile, the second resistor and the first resistor are of the same type, so that the resistance change influence caused by process drift is offset, and the output current is further stabilized. The circuit can be integrated in an analog-digital hybrid chip, the cost is saved, and the overall circuit performance is improved.

This invention discloses an air conditioning device that determines the initial and equilibrium temperatures of a power module; controls the compressor's operating state to ensure the IGBT output current has a relative zero temperature coefficient; determines the total power module losses at the equilibrium temperature based on the IGBT's relative zero temperature coefficient parameters; acquires the thermal resistance of the inverter driver and refrigerant radiator, and determines the theoretical temperature based on the thermal resistance and total losses; determines the theoretical temperature rise based on the theoretical and initial temperatures, and determines the measured temperature rise based on the equilibrium and initial temperatures; determines the deviation value based on the theoretical and measured temperature rises; acquires the standard deviation value, and compares the deviation value with the standard deviation value to determine whether the refrigerant radiator is qualified. The air conditioning device can intelligently assess the reliability of the refrigerant radiator and its installation.

The invention relates to a relaxation oscillator irrelevant to oscillation frequency and temperature. The relaxation oscillator comprises a reference module, a bias current source module and an oscillator core circuit module, the reference module is used for outputting zero temperature coefficient current; the bias current source module is used for finely adjusting the zero temperature coefficient current and outputting the zero temperature coefficient current after fine adjustment; and the oscillator core circuit module is used for charging and discharging the capacitor C by taking the fine-tuned zero temperature coefficient current as a charging and discharging current. According to the invention, the change rate of the current at-40 DEG C to 125 DEG C along with the temperature can be controlled below + / -0.6%.

The invention discloses a control voltage generation method and circuit for a voltage-controlled oscillation circuit. The control voltage generation method comprises the following steps: obtaining a first differential current between a zero temperature coefficient current and a first positive temperature coefficient current; compensating the first differential current by a compensation current to provide a control current; and providing a control voltage according to the control current and the corresponding target conversion gain, the compensation current being zero in the second temperature interval and being zero in the third temperature interval when the control voltage is not changed, and the compensation current being zero in the second temperature interval when the control voltage is not changed. The change rate of the oscillation frequency in the first temperature interval and the third temperature interval along with the temperature is larger than the change rate in the second temperature interval. According to the control voltage generation method and circuit provided by the invention, the oscillation frequency of the voltage-controlled oscillation circuit does not change along with the temperature change through the self-adaptive temperature compensation of the control voltage, and the reliability of the voltage-controlled oscillation circuit is improved.

The invention relates to a bias current with mixed temperature distribution. Aspects of the present disclosure include a scalable proportional to absolute temperature (PTAT) hybrid circuit comprising: a bias mirror circuit configured to provide a zero temperature coefficient (ZTC) current; a PTAT control circuit configured to generate a PTAT current having a slope having a non-zero value based on the ZTC current, the PTAT current being varied by at least scaling the PTAT current or changing the slope of the PTAT current to generate a varied PTAT current; and providing a changed PTAT current; and a mixing circuit configured to receive the ZTC current and the changed PTAT current, and output a larger current of the ZTC current and the changed PTAT current as a mixed current.

This invention provides a soft-start circuit, relating to the field of electronic and electrical technology. It includes a constant current source module that outputs a zero-temperature coefficient nA-level constant current; a constant current charging module that linearly charges a soft-start capacitor with a constant current, generating a linearly rising soft-start reference voltage; a feedback control module that clamps the output sampling voltage to the reference voltage through a negative feedback loop, ensuring a smooth rise in output voltage; a low-power logic control module that shuts down the constant current charging and feedback control modules after soft-start; and a gate drive module that drives the power devices to conduct. The advantages include using a zero-temperature coefficient nA-level current combined with negative feedback clamping to solve the problems of temperature drift, unstable charging slope, and low control accuracy in traditional RC structures; shutting down related modules after soft-start, combined with a low-current design to reduce static power consumption; and the ability to integrate the circuit on a standard process chip without external components, reducing system size and cost.

The invention discloses a high-precision voltage stabilizing source circuit with a zero temperature coefficient, and relates to the field of voltage stabilizing source circuits, the high-precision voltage stabilizing source circuit comprises a voltage stabilizing unit, a first current source unit and a second current source unit which are adaptively connected, the first current source unit is used for generating a first current I1 with a positive temperature coefficient, and the second current source unit is used for generating a second current I2 with a negative temperature coefficient. The second current source unit is used for generating a second current I2 with a negative temperature coefficient; and based on the first current I1, the second current I2 and element parameters of the voltage stabilizing unit, the voltage stabilizing unit generates a reference voltage VREF with a zero temperature coefficient. The voltage stabilizing source circuit has a zero temperature coefficient and high output precision.

The invention relates to a low-noise reference circuit based on a Zener diode, which is composed of a PTAT current generating circuit, a CTAT current generating circuit and a temperature coefficient eliminating circuit, the Zener diode adopts built-in bias current, in the circuit, positive temperature characteristics and negative temperature characteristics of different components are fully utilized to offset each other, and in the circuit, the positive temperature characteristic and the negative temperature characteristic of the CTAT current generating circuit are utilized to offset each other; and secondly, a negative feedback circuit is designed to correct the working state of the Zener diode in real time, and it is ensured that the Zener diode works in a linear state and operates stably. And low-temperature drift, high-linearity and high-precision output of the circuit is realized.

The invention discloses a front-end detection circuit of a high-precision temperature sensor. The front-end detection circuit comprises a biasing and starting module, a temperature sensing core module, an output module and a high-order temperature compensation module. The starting module activates the core temperature sensing circuit when the power supply is powered on. The temperature sensing core module takes a BJT as a temperature sensing element and generates positive and negative temperature coefficient voltage. The output module generates a zero temperature coefficient reference voltage and a positive temperature coefficient voltage. And the high-order temperature compensation module realizes temperature compensation by generating currents with different temperature characteristics, so that the measurement precision is improved.

The invention relates to a device structure for reducing the zero temperature coefficient voltage of a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) transfer characteristic curve and a preparation method of the device structure. The device structure sequentially comprises a substrate (1), an N-drift region (2), a current expansion layer (3) and a jfet region (4), a pwell region (5) is formed on the N-drift region (2) through ion implantation; n ion implantation is carried out on the pwell region (5) to form an nplus region (6), and Al ion implantation is carried out on the pwell region (5) to form a pplus region (7). According to the invention, the zero temperature coefficient voltage is effectively reduced through the structural design, which is of great significance to SiC MOSFETs.

This invention discloses a frequency converter driver testing device that determines the initial temperature and equilibrium temperature of a power module; determines the total power module loss at the equilibrium temperature based on the IGBT's relative zero temperature coefficient parameters, current, and voltage; obtains the frequency converter driver's thermal resistance and determines the theoretical temperature based on the thermal resistance and total loss; determines the theoretical temperature rise based on the theoretical temperature and initial temperature, and determines the measured temperature rise based on the equilibrium temperature and initial temperature; determines the deviation value based on the theoretical temperature rise and measured temperature rise; obtains the standard deviation value, and compares the deviation value with the standard deviation value to determine whether the heat sink and power module assembly is qualified. The testing device determines the deviation value by comparing the theoretical temperature change estimated from the power module loss under a specific state and the thermal resistance with the actual temperature change of the power module, and compares this deviation value with a pre-determined standard deviation value to determine whether the heat sink and power module assembly is qualified. This allows for intelligent assessment of the reliability of the power module and heat sink installation.

A method for generating a constant current. The method can include receiving an input voltage at a voltage input connected to a resistor pair, the resistor pair including a first resistor and a second resistor, the first resistor having a positive temperature coefficient and the second resistor having a negative temperature coefficient. The first and second resistors can be configured such that the variability of resistance over temperature of the first resistor and the variability of resistance over temperature of the second resistor cancel to produce a zero temperature coefficient for the resistor pair. The method can further include applying the input voltage to the resistor pair to generate a current with a zero temperature coefficient.

The invention discloses a method and equipment for controlling back bias output zero temperature coefficient current, relates to the technical field of integrated circuits, and is used for solving the problem that the current temperature coefficient of a target transistor cannot be flexibly regulated and controlled in the prior art. Comprising the following steps: configuring a band-gap reference circuit; simulating a target transistor in the band-gap reference circuit, and determining the size and bias voltage of the transistor meeting a preset condition; performing voltage division processing on the band-gap reference circuit to determine a target back gate voltage; and applying the target back gate voltage to the back gate end of the target transistor, iteratively updating the transistor size and the target back gate voltage, and outputting a current meeting the zero temperature coefficient requirement. According to the technical scheme provided by the invention, better temperature performance can be realized, and the complexity of circuit design is reduced; flexible back bias voltage is provided, and more choices are provided for circuit design.

The application discloses a reference current temperature compensation circuit and a reference current temperature compensation control method, and the reference current temperature compensation circuit comprises a PTAT current generation circuit, a temperature compensation module and a CTAT current output module; the PTAT current generation circuit is used for generating a PTAT current; the temperature compensation module is used for generating a temperature coefficient current; and the CTAT current output module is used for outputting to a set output end through current mirror mirroring. The reference current temperature compensation circuit and the reference current temperature compensation control method can complete the temperature compensation of the current by using a few devices without affecting the reference voltage in the band gap reference circuit, obtain a reference current with zero temperature coefficient, or directly generate a reference current with zero temperature coefficient by using a PTAT current, thereby saving the area of the chip and reducing the production cost to a certain extent. In addition, the current has high stability and is less affected by a power supply voltage, and can well adapt to market needs.

The application discloses a band gap reference voltage circuit, and relates to the field of circuit design, which comprises a positive and negative temperature coefficient voltage generating circuit, a temperature coefficient compensation circuit and a voltage dividing circuit. The positive and negative temperature coefficient voltage generating circuit generates positive temperature coefficient voltage and negative temperature coefficient voltage. The temperature coefficient compensation circuit generates zero temperature coefficient voltage based on the positive temperature coefficient voltage and the negative temperature coefficient voltage. The voltage at the first end of the voltage dividing circuit is the zero temperature coefficient voltage. The second end of the voltage dividing circuit is grounded. The reference voltage is less than the zero temperature coefficient voltage by adjusting the voltage division between the first end and the voltage dividing end and between the second end and the voltage dividing end in the voltage dividing circuit, so that the loss of a digital circuit working with the reference voltage provided by the band gap reference voltage circuit is reduced.

An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a reference circuit that generates a first reference with a first non-zero temperature coefficient and a second reference with a second temperature coefficient having a different magnitude than the first non-zero temperature coefficient. A detector circuit on the integrated circuit, having temperature and process variation compensation, converts a difference between the first and second references into a digital signal indicating temperature on the integrated circuit.

The invention provides an intermediate dielectric microwave ceramic material with a near-zero temperature coefficient and a preparation method thereof, and relates to the field of ceramic materials. The material comprises the following components in percentage by weight: 97 to 98.5 percent of main crystal phase, 0.1 to 1.0 percent of Mg-Ca-Si-O glass phase and 0.5 to 2.5 percent of modified additive (selected from BaCO3, SrCO3 and the like), the core chemical formula of the main crystal phase is (MxCaLnz) TiO3, and during preparation, Mg / Zn salt, Ca salt, rare earth and TiO2 are mixed and calcined for 1-4 h at the temperature of 1050-1250 DEG C, and the main crystal phase is obtained; melting the Mg-Ca-Si-O mixture, and performing water quenching to obtain a glass phase; the three components are mixed in proportion, molded under 10MPa, and sintered at 1280-1400 DEG C for 2-5 hours. The room temperature dielectric constant of the material is 25-33, Qf is larger than or equal to 25000GHz, tau f (-40-110 DEG C)-10-30ppm / DEG C is adjustable, the cost is low, the sintering applicability is high, the requirements of microwave devices are met, the overall preparation steps are simple, key parameters (temperature, time, pressure and the like) are definite, the repeatability is good, and the industrial stable production requirements can be met.

Aspects of the present disclosure include a scalable proportional to absolute temperature (PTAT) hybrid circuit, comprising a bias mirror circuit configured to provide a zero temperature coefficient (ZTC) current, a PTAT control circuit configured to generate, based on the ZTC current, a PTAT current with a slope having a non-zero value, alter the PTAT current by at least scaling the PTAT current or changing the slope of the PTAT current to generate an altered PTAT current, and provide the altered PTAT current, a hybrid circuit configured to receive the ZTC current and the altered PTAT current, and output a larger current of the ZTC current and the altered PTAT current as a hybrid current.

The application discloses a high-precision voltage stabilizing source circuit with zero temperature coefficient, and relates to the field of voltage stabilizing source circuits.The method comprises a voltage stabilizing unit, a first current source unit and a second current source unit which are adaptively connected.The first current source unit is used for generating a first current I1 with a positive temperature coefficient, and the second current source unit is used for generating a second current I2 with a negative temperature coefficient.Based on the first current I1, the second current I2 and element parameters of the voltage stabilizing unit, the voltage stabilizing unit generates a reference voltage VREF with zero temperature coefficient.The voltage stabilizing source circuit has zero temperature coefficient and higher output precision.

The invention discloses a zero-temperature-drift resistance circuit and a trimming method, relates to the technical field of integrated circuits, and aims to solve the problem that a resistance circuit in the prior art cannot realize low resistance, zero temperature drift, high precision and reduction of occupied area at the same time. The circuit comprises a main resistor network, a first trimming resistor network and a second trimming resistor network, the main resistor network is connected in parallel with the first trimming resistor network and then is connected in series with the second trimming resistor network; the trimming precision of the first trimming resistor network is smaller than that of the second trimming resistor network; trimming resistor units in the main resistor network and the first trimming resistor network are zero temperature coefficient resistor units; therefore, the main resistor network, the first trimming resistor network and the second trimming resistor network can be utilized to perform step-by-step trimming, and a resistance value adaptive to the target resistor is obtained and then output. And low resistance, zero temperature excursion and high precision are realized while the occupied area of the chip is reduced.

The invention relates to a high-precision segmented compensation band-gap reference circuit, which comprises a first-order reference core module used for enabling the voltage difference between the base electrode and the emitter electrode of a triode to act on a resistor R3, acquiring current flowing through the resistor R3, inputting the current into a self-bias current circuit, and outputting a reference voltage source VREF according to compensation current output by a temperature compensation module; the self-bias current circuit is used for generating self-bias reference current, taking the self-bias reference current as zero temperature coefficient current, taking the current flowing through the resistor R3 as positive temperature coefficient current, combining the positive temperature coefficient current and the zero temperature coefficient current in proportion, and inputting the positive temperature coefficient current and the zero temperature coefficient current into the temperature compensation module; and the temperature compensation module is used for outputting compensation current according to the combined current. According to the invention, the sensitivity of the reference voltage to process deviation and power supply fluctuation is obviously reduced.