Unlock instant, AI-driven research and patent intelligence for your innovation.

All-bridge type piezoresistance type pressure sensor digital type signal conditioning chip

A signal conditioning chip and pressure sensor technology, applied in the field of digital signal conditioning chips, can solve the problems of increasing the cost of chips, achieve low cost, high conditioning precision, and overcome low precision

Active Publication Date: 2008-08-06
WUHAN FINEMEMS
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These factors all increase the cost of the chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • All-bridge type piezoresistance type pressure sensor digital type signal conditioning chip
  • All-bridge type piezoresistance type pressure sensor digital type signal conditioning chip
  • All-bridge type piezoresistance type pressure sensor digital type signal conditioning chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Embodiments of the present invention are further described below in conjunction with the accompanying drawings:

[0020] Working principle of the present invention:

[0021] For the principle of zero temperature drift compensation, see image 3 , under zero pressure, test the high and low temperature data of the sensor, and obtain the temperature function expression of the sensor zero output:

[0022] V o = k 0 T + b · 0

[0023] V c1 The expression is: V c1 =K 0 T+B 0 . There are two registers corresponding to it: RSV 1 、RSV 2 . RSV 1 Store parameter K 0 , whose value is the k calculated by testing 0 , RSV 2 store parameter B 0 , whose value is b calculated by testing 0 .

[0024] K 0 The range is: 0.01:0.1

[0025] B 0 The range is: -15:+15

[0026] Sensitivity temperature compens...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a digital signal conditioning chip of a full-bridge and piezoresistive pressure sensor, which mainly comprises a bandgap reference voltage module, an adjustable gain calculation amplifier module and a digital control unit module. The invention is characterized in that a positive temperature coefficient voltage is generated in the bandgap reference voltage module to provide an energizing voltage for the full-bridge and piezoresistive pressure sensor, the digital control unit module is equipped with a memory and an inner clock circuit, the gain in the adjustable gain switch capacity calculation amplifier is confirmed by the digital control unit module according to the parameter of positive temperature coefficient, zero temperature coefficient and zero output value. The digital signal conditioning chip of a full-bridge and piezoresistive pressure sensor has the advantages that the conditioning chip realizes effect compensation of sensitivity, zero drift compensation and adjustment of zero output, and is high in conditioning accuracy and low in cost.

Description

technical field [0001] The invention relates to a piezoresistive pressure sensor, in particular to a digital signal conditioning chip of a full-bridge piezoresistive pressure sensor. technical background [0002] The piezoresistive pressure sensor processed by MEMS technology is widely used in industrial control, automotive electronics and other fields because of its small size and low price. However, the pressure sensor processed by silicon material has obvious temperature effect. This makes MEMS pressure sensors must be temperature compensated in practical applications. [0003] There are many compensation methods for piezoresistive pressure sensors. The traditional compensation method is realized by connecting resistors in series and in parallel. See figure 1 , the figure is a sensor excited by a constant current source, at this time the sensitivity of the sensor becomes larger as the temperature rises. The parallel resistance Rs plays the role of compensating the sens...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01L1/18
Inventor 陈君杰刘胜唐益谦
Owner WUHAN FINEMEMS
PatSnap Eureka logo

PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.

X (Twitter)LinkedInYouTubeSubstack

© 2026 PatSnap. All rights reserved. 

Terms of Service

 | 

Privacy policy

 | 

Modern Slavery Act Transparency Statement