The utility model discloses an integrated
power module with shunt resistors, which comprises a power substrate, a plurality of IGBTs (Insulated Gate Bipolar Translator), shunt resistors and diodes are welded on the power substrate, one end of one shunt
resistor is correspondingly connected with an emitter of one IGBT and an
anode of one
diode, the other end of the shunt
resistor is grounded, and a
cathode of the
diode is connected with a collector of the IGBT; when
overcurrent occurs in the circuit, a current
signal is transmitted to the shunt
resistor, and when the shunt resistor detects that the current is too large, a gate drive
signal of the IGBT is turned off immediately so as to turn off the IGBT; according to the utility model, the connection mode of a traditional IGBT
external resistor is optimized, and the shunt resistor and the IGBT are directly welded on the same power substrate together, so that the distance between the shunt resistor and the IGBT is closer, the current
signal circulation paths are reduced, the shunt resistor can rapidly detect
overcurrent and close the IGBT, and each component is further protected from being damaged.