Ti-based LTCC microwave dielectric ceramic material and preparation method thereof

A technology of microwave dielectric ceramics and base materials, which is applied in the field of Ti-based LTCC microwave dielectric ceramic materials and its preparation, can solve the problems of high sintering temperature, unsatisfactory cooling effect, incompatibility with LTCC technology, etc., and achieve the resonant frequency temperature coefficient The effect of low temperature sintering

Active Publication Date: 2017-05-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, the sintering temperature of this ceramic material system is still too high to be compatible with LTCC technology
And since many conventional low-melting sintering aids are in (Mg 0.95

Method used

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  • Ti-based LTCC microwave dielectric ceramic material and preparation method thereof
  • Ti-based LTCC microwave dielectric ceramic material and preparation method thereof
  • Ti-based LTCC microwave dielectric ceramic material and preparation method thereof

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Embodiment Construction

[0022] Below in conjunction with accompanying drawing and specific embodiment, the present invention is described in further detail, and process method is as follows: figure 1 shown.

[0023] Step 1, according to the molar ratio MgCO 3 :Co 2 o 3 : TiO 2 =1.9:0.05:1 weighing configuration (Mg 0.95 co 0.05 ) 2 TiO 4 ; According to the molar ratio Li 2 CO 3 : TiO 2 =1:1 weighing configuration Li 2 TiO 3 ; will prepare (Mg 0.95 co 0.05 ) 2 TiO 4 and Li 2 TiO 3 Perform ball milling once to mix the materials evenly, and then dry them separately for later use.

[0024] Step 2, the (Mg 0.95 co 0.05 ) 2 TiO 4 After sieving the dried material, put it into a crucible for compaction, raise the temperature up to 1200°C at a rate of 2°C / min for pre-burning, keep the temperature for 3 hours, and cool down with the furnace to obtain (Mg 0.95 co 0.05 ) 2 TiO 4 Pre-fired material; the Li obtained in step 1 2 TiO 3 After the drying material is sieved, it is put into ...

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Abstract

The invention belongs to an electronic ceramic material and the manufacturing field thereof, and in particular relates to a Ti-based LTCC microwave dielectric ceramic material and a preparation method thereof. The preparation method comprises the following steps: firstly, compounding (Mg0.95Co0.05)2TiO4 and Li2TiO3; then realizing low-temperature sintering at 900-950 DEG C of a whole material system by means of LMZBS glass doped fluxing; and finally, realizing the optimum properties under the low-temperature sintering at 900 DEG C: the dielectric constant: epsilonr=16.6, Q*f=125800GHz and tauf=1.4ppm/DEG C. The Ti-based LTCC microwave dielectric ceramic material provided by the invention has high properties of ultra-low-loss, near-zero temperature coefficient of resonance frequency and low-temperature sintering. The dielectric constant of the material epsilonr is 16.6-17.1, the Q*f value is 88400-125800GHz, and the temperature coefficient of resonance frequency tauf is 1.3-5.1ppm/DEG C. The material can be widely applied to an LTCC microwave substrate, a laminated microwave apparatus and a module.

Description

technical field [0001] The invention belongs to the field of electronic ceramic materials and its manufacture, and in particular relates to a Ti-based LTCC microwave dielectric ceramic material with ultra-low loss and near-zero resonance frequency temperature coefficient characteristics and a preparation method thereof. Background technique [0002] LTCC (Low Temperature Co-fired Ceramics) technology is currently the most important passive integration and active / passive hybrid integration technology, which is widely used in contemporary electronic complete systems. The core of LTCC technology includes three parts, namely LTCC process technology, LTCC design technology and LTCC material technology. Among them, LTCC material technology is the most critical. However, currently commercialized high-performance LTCC materials in the world are mainly monopolized by several large companies in the United States, Japan and Germany. China has not yet achieved key technological breakth...

Claims

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Application Information

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IPC IPC(8): C04B35/462C04B35/634C04B35/626C04B35/64C03C3/066
CPCC03C3/066C04B35/462C04B35/62695C04B35/63416C04B35/64C04B2235/3203C04B2235/3206C04B2235/3275C04B2235/3284C04B2235/3409C04B2235/3418C04B2235/6562C04B2235/6565C04B2235/6567
Inventor 苏桦王海宇唐晓莉张怀武荆玉兰李元勋
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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