Low-power-consumption full-CMOS reference source circuit based on subthreshold value

Abstract

The invention discloses a low-power-consumption full-CMOS reference source circuit based on a subthreshold value. The low-power-consumption full-CMOS reference source circuit based on the subthreshold value comprises a start circuit unit, a current generating circuit unit and an active load circuit unit. The start circuit unit is used for providing a start current to enable the current to get into a normal work state. The current generating circuit unit is used for generating a current irrelevant to input power voltages. Due to the fact that part of MOS transistors work in a subthreshold state, the work current is low, and the power consumption of the circuit can be reduced. The output active load circuit unit outputs a zero temperature coefficient and low output voltages through the body polarization technology. The circuit has the advantages of being low in power consumption, low in temperature coefficient, wide in work voltage range, small in area and the like.

Description

technical field [0001] The invention relates to a reference source circuit with low power consumption, low temperature coefficient, wide working range and small area, more specifically, a low power consumption full CMOS reference source circuit based on sub-threshold. Background technique [0002] With the development of modern technology, integrated circuits have become the trend of circuit development. The reference source is an important part of the integrated circuit. It is widely used in power management chips, phase-locked loops, digital-to-analog conversion, and memory chips to provide reference voltages for the entire chip. The accuracy and stability of a reference source that does not change with temperature, power supply voltage, or even process is directly related to the performance of the entire chip. [0003] The integrated circuit continues to expand, and the circuit structure is becoming more and more complex. More circuit modules are integrated together, and...

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Problems solved by technology

[0018] But this structure has some shortcomings, in order to ensure the V with negative linear temperature parameter TH It will not be offset in the process of finding the difference, and then the special threshold tube M4 is introduced, which adds additional process manufacturing procedures and increases the cost

At the same time, this circuit is not compatible with the standard CMOS process that only has ordinary threshold voltage MOS tubes, and the portability of the circuit is not high, which limits the scope of use.

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