CMOS sub-threshold reference circuit with low power consumption and low temperature drift

A reference circuit, low temperature drift technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc. Effect

Inactive Publication Date: 2017-10-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, traditional bandgap reference sources are difficult to meet the requirements of low-power reference sources due to the limitation of BE junction voltage; non-bandgap referenc

Method used

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  • CMOS sub-threshold reference circuit with low power consumption and low temperature drift
  • CMOS sub-threshold reference circuit with low power consumption and low temperature drift
  • CMOS sub-threshold reference circuit with low power consumption and low temperature drift

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Embodiment Construction

[0025] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0026] Such as figure 2 Shown is a schematic circuit diagram of a low-power low-temperature drift CMOS sub-threshold reference circuit in the embodiment. The startup circuit includes a first NMOS transistor MN1, a second NMOS transistor MN2, and a first PMOS transistor MP1. The first NMOS transistor MN1 serves as The start switch tube is used, and the first PMOS transistor MP1 is used as a startup capacitor; the gate of the second NMOS transistor MN2 is connected to the gate of the first PMOS transistor MP1 and the drain of the first NMOS transistor MN1, and its drain is used as the startup circuit The drain and source of the first PMOS transistor MP1 and the gate of the first NMOS transistor MN1 are connected to the power supply voltage VCC, and the sources of the first NMOS transistor MN1 and the second NMOS transistor MN2 are grounded.

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Abstract

The invention relates to a CMOS sub-threshold reference circuit with low power consumption and low temperature drift, and belongs to the technical field of power management. The circuit comprises a starting circuit, a negative temperature generating circuit and a reference voltage output circuit, the starting circuit prevents the whole circuit from remaining in a zero state when a power supply is built, and the starting circuit is switched off after completing; the negative temperature generating circuit generates a muT2 current through a NMOS tube threshold voltage VTH, wherein mu is the drift mobility, and the muT2 current is input into an NMOS tube to generate negative temperature coefficient voltage with positive temperature compensation; the negative temperature coefficient voltage with positive temperature compensation which is output by the negative temperature generating circuit is superimposed on the positive temperature coefficient voltage which is generated by the reference voltage output circuit, and a reference voltage VREF is obtained. According to the CMOS sub-threshold reference circuit, the obtained reference voltage VREF can reach the characteristic which is similar to the zero temperature in the temperature range of 55-110 DEG C; ultralow power consumption of muW magnitude is achieved.

Description

technical field [0001] The invention belongs to the technical field of power supply management, and in particular relates to the design of a low-power consumption low-temperature drift reference generation circuit based on a sub-threshold MOSFET. Background technique [0002] The reference voltage source is an extremely important part of analog integrated circuits and digital-analog hybrid circuits, and is widely used in power converters, power amplifiers, digital-to-analog converters and other circuits. The function of the reference voltage source is to provide a voltage reference independent of temperature and power supply voltage for the circuit. As the power supply voltage continues to drop, it is very critical to design a reference source with low voltage, low power consumption, low temperature coefficient, and high power supply rejection ratio. Mobile electronic devices have higher and higher requirements on power consumption, so that the power supply voltage of the r...

Claims

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Application Information

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IPC IPC(8): G05F3/26
CPCG05F3/26
Inventor 周泽坤汪尧王韵坤马亚东石跃王卓张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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