Zero-temperature coefficient reference voltage generating circuit for three-dimensional storage

A voltage generation circuit, zero temperature coefficient technology, used in instruments, regulating electrical variables, control/regulating systems, etc., can solve problems such as increased area consumption, increased structural complexity, etc., to reduce requirements, not immune to power supply voltage. effect, low power consumption

Active Publication Date: 2014-09-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional bandgap reference circuits such as figure 1 As shown, it includes two triodes and an operat

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Zero-temperature coefficient reference voltage generating circuit for three-dimensional storage
  • Zero-temperature coefficient reference voltage generating circuit for three-dimensional storage
  • Zero-temperature coefficient reference voltage generating circuit for three-dimensional storage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0052] The present invention provides a reference voltage generation circuit with zero temperature coefficient, unaffected by changes in power supply voltage, and low power consumption. Its structural block diagram is as follows: figure 2 with image 3 As shown, it includes a start-up circuit, a current generation circuit and a voltage generation circuit connected in sequence, wherein the start-up circuit is used to ensure that the zero temperature coefficient reference voltage generation circuit can work normally after power-on; the current generation circuit is used to generate a negative temperature coefficient The current with negative temperature coefficient has nothing to do with the power supply voltage; the volta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a zero-temperature coefficient reference voltage generation circuit for a three-dimensional storage. The zero-temperature coefficient reference voltage generation circuit comprises a starting circuit, a current generating circuit and a voltage generating circuit, wherein the starting circuit, the current generating circuit and the voltage generating circuit are connected in sequence, the starting circuit is used for guaranteeing that the zero-temperature coefficient reference voltage generation circuit can work normally after being powered on, the current generating circuit is used for generating a current of negative temperature coefficients, the current with the negative temperature coefficient is unrelated to a supply voltage, and the voltage generating circuit is used for generating a reference voltage of zero temperature coefficients according to the current of the negative temperature coefficients. The zero-temperature coefficient reference voltage generation circuit for the three-dimensional storage has the advantages of being simple in structure, easy in achievement mode, low in power consumption and free of influence by the supply voltage and having the zero temperature coefficients.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional memory, in particular to a three-dimensional memory-oriented zero temperature coefficient reference voltage generating circuit with simple structure, simple implementation, low power consumption and no influence of power supply voltage. Background technique [0002] In memory circuits, especially in the application of three-dimensional memory, in order to improve the consistency, reliability and accuracy of the read operation of the memory circuit, a stable reference voltage that is not affected by power supply voltage and temperature changes is required for the read operation the reference voltage. [0003] In order to reduce the influence of temperature, the prior art provides a stable reference circuit that is not affected by temperature changes, such as a bandgap reference circuit (Bandgap Reference Circuit), to generate the above reference voltage. In simple terms, the bandgap refe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G05F3/26
Inventor 李婷霍宗亮刘明王瑜曹华敏刘璟
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products