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NEMS piezoresistive pressure sensor chip and its making process

A pressure sensor and piezoresistive technology, which is applied in the field of MEMS devices, can solve the problems of poor uniformity of pressure-sensitive film thickness, poor piezoresistive consistency, and difficult leakage current, so as to improve yield, reduce leakage current, and reduce zero point output effect

Inactive Publication Date: 2003-07-30
PEKING UNIV
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  • Application Information

AI Technical Summary

Problems solved by technology

However, although the piezoresistive sensor has already formed a product, the MEMS piezoresistive chip as its core has limited the application of the MEMS piezoresistive pressure sensor due to problems such as poor piezoresistive consistency, difficulty in controlling leakage current, and poor uniformity of pressure-sensing film thickness. A large number of applications

Method used

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  • NEMS piezoresistive pressure sensor chip and its making process
  • NEMS piezoresistive pressure sensor chip and its making process
  • NEMS piezoresistive pressure sensor chip and its making process

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Embodiment Construction

[0023] A 4-inch 400-micron-thick N-type double-sided polished single crystal silicon wafer is used, with a resistivity of 2-4Ωcm.

[0024] 1. After the silicon wafer is cleaned, perform original oxidation of 300-350nm;

[0025] 2. The high-precision piezoresistor is prepared by ion implantation technology, and the implantation conditions are: 90-120KeV, 1.0×10 14 cm -2 -2.0×10 14 cm -2 , and then carry out boron drive-in, the condition is 1000-1500 ℃, 80-120 minutes;

[0026] 3. Diffusion of concentrated phosphorus forms n + Isolation, body concentration > 1.0×10 after annealing 19 cm -3 ;

[0027] 4. Concentrated boron diffuses to form p + Connection, body concentration > 5.0×10 after annealing 18 cm -3 ;

[0028] 5. KOH corrodes the back cavity, and the thickness of the film is controlled by the mark on the front of the pressure-sensitive film;

[0029] 6. Engraving lead holes, sputtering aluminum, alloy, 400-420°C, 30 minutes;

[0030] 7. Bonding, dicing, fina...

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Abstract

The MEMS piezoresistive pressure sensor chip is one cup-shaped structure including one squared pressure-sensing film, peripheral support and four piezoresistors, which are in the maximum strain area of the pressure-sensing film constitute point bridge to sense pressure change. The piezoresistors are made by ion implantation technology and there is a circle of n+isolating area around each piezoresistor and aligning mark in the edge of the pressure-sensing film to monitor the thickness of the pressure-sensing film. Compared with conventional diffusion technology, the ion implantation technologyhas higher piezoresistor precision, lower zero input and lower zero temperature drift. The increased n+isolating area raises the long-term stability of chip, and the aligning mark makes the etching of the sensing film more controllable.

Description

Technical field: [0001] The invention relates to a MEMS (micro-electro-mechanical system) device, in particular to a MEMS piezoresistive pressure sensor chip. Background technique: [0002] Micro electromechanical systems (Micro electro mechanical Systems-American idiomatic words), also known as micromachines (Micromachine-Japanese idiomatic words) and microsystems (Microsystems-European idiomatic words), refer to micro-mechanical processing technology including microsensors, Micro-electromechanical devices and devices composed of micro-mechanical basic parts such as micro-actuators and micro-energy sources, and high-performance electronic integrated circuits. Micro-electromechanical systems with micro-mechanics as the research object involve a variety of disciplines, mainly including basic content such as micro-mechanics, microelectronics, automatic control, physics, chemistry, biology, and material science. It is a multi-disciplinary, high-tech marginal discipline. . To ...

Claims

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Application Information

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IPC IPC(8): G01L9/06
Inventor 张威张大成刘蓓李婷王阳元
Owner PEKING UNIV
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