Environment-friendly sulfur group stannide thermoelectric material and preparing method thereof

An environment-friendly, thermoelectric material technology, applied in the field of chalcogentin compound thermoelectric materials and its preparation, to achieve high thermoelectric performance, improve thermoelectric performance, and reduce the effect of lattice thermal conductivity

Inactive Publication Date: 2017-05-17
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the current high-performance tin telluride-based materials contain toxic elements such as Cd / Hg, they have the same environmental friendliness problems as PbTe

Method used

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  • Environment-friendly sulfur group stannide thermoelectric material and preparing method thereof
  • Environment-friendly sulfur group stannide thermoelectric material and preparing method thereof
  • Environment-friendly sulfur group stannide thermoelectric material and preparing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] A high-performance and environment-friendly chalcogenide tin compound thermoelectric material with the chemical formula Sn 1.03-y Mg y Te(Cu 2 Te) x (01.03-y Mg y Te(Cu 2 Te) 0.05 Block material:

[0035] (1) Take different y values, according to the chemical formula Sn 1.03-y Mg y Te(Cu 2 Te) 0.05 Stoichiometric ratio of (0

[0036] (2) Suspend the quartz tube containing the raw material in the pit furnace, slowly raise the temperature to 850°C at a rate of 200K / h, keep it warm for 6h, and then rapidly quench and cool to obtain the first ingot;

[0037] (3) heat-treating the first ingot after high-temperature melting and quenching obtained in step (2), slowly raising the temperature to 677°C at a rate of 200K / h, keeping it warm for 3 days, and then rapidly quench...

Embodiment 2

[0045] An environment-friendly chalcogentin compound thermoelectric material with the chemical formula Sn 1.03-y Mg y Te(Cu 2 Te) x (x=0.03, y=0.05), which is a semiconductor thermoelectric material.

[0046] A method for preparing an environment-friendly chalcogentin compound thermoelectric material, comprising the following steps:

[0047] (1) Vacuum packaging: use the elemental elements Sn, Mg, Cu, Te with a purity greater than 99.99% according to the chemical formula Sn 1.03-y Mg y Te(Cu 2 Te) x The stoichiometric ratio in (x=0.03, y=0.05) is batched, and vacuum-packed in a quartz tube;

[0048] (2) Melting and quenching: Put the quartz tube with raw materials into the well-type furnace, raise the temperature of the quartz tube from room temperature to 850 °C at a rate of 150 °C per hour and keep it warm for 6 hours, and heat slowly to make the raw material in a molten state Fully reacted, followed by quenching to obtain ingots;

[0049] (3) Annealing and quenchin...

Embodiment 3

[0053] An environment-friendly chalcogentin compound thermoelectric material with the chemical formula Sn 1.03-y Mg y Te(Cu 2 Te) x (x=0.05, y=0.12), which is a semiconductor thermoelectric material.

[0054] A method for preparing an environment-friendly chalcogentin compound thermoelectric material, comprising the following steps:

[0055] (1) Vacuum packaging: use the elemental elements Sn, Mg, Cu, Te with a purity greater than 99.99% according to the chemical formula Sn 1.03-y Mg y Te(Cu 2 Te) x The stoichiometric ratio in (x=0.05, y=0.12) is batched, and vacuum-packed in a quartz tube;

[0056] (2) Melting and quenching: Put the quartz tube with raw materials into the well-type furnace, raise the temperature of the quartz tube from room temperature to 900 °C at a rate of 200 °C per hour and keep it warm for 6 hours, and heat slowly to make the raw material in a molten state Fully reacted, followed by quenching to obtain ingots;

[0057] (3) Annealing and quenchin...

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Abstract

The invention relates to a high-performance environment-friendly sulfur group stannide thermoelectric material and a preparing method thereof. The chemical general formula of the thermoelectric material is Sn1.03-yMgyTe(Cu2Te)x(0<x<=0.05, 0<y<=0.12). According to the preparing method, a metal elementary substance with purity larger than 99% is used as a raw material, material matching is carried out according to the stoichiometric ratio of Sn1.03-yMgyTe(Cu2Te)x, after vacuum packaging, high-temperature melting and annealing heat treatment are carried out, the material is ground into powder, and after vacuum hot-press sintering and slow cooling are carried out, a sheet material is obtained and is the novel sulfur group stannide thermoelectric material of the target component. According to the design, in the SnTe material, collaborative optimization of an electrical transport property and a hot transport property is achieved to improve thermoelectric performance of the material. Compared with the prior art, the invention develops a novel high-performance environment-friendly Sn1.03-yMgyTe(Cu2Te)x thermoelectric material, the zT value reaches 1.4 at 900 K, and the material is an environment-friendly high-performance thermoelectric material with potentials for replacing a traditional p-type lead telluride material.

Description

technical field [0001] The invention belongs to the technical field of new energy materials, and in particular relates to a chalcogen tin compound thermoelectric material and a preparation method thereof. Background technique [0002] Economic development has not only increased energy demand, but also aggravated environmental pollution, making research on renewable clean energy attract much attention. Based on the Selbeck effect, thermoelectric energy materials realize the mutual conversion of thermal energy and electrical energy through the carrier transport in the material. Thermoelectric energy conversion devices have the characteristics of no noise, no pollution, and environmental friendliness, and are a type of sustainable and clean energy. It has been used in aerospace power supply, industrial waste heat recovery, and automobile exhaust heat utilization. The wide application of thermoelectric energy materials can not only solve part of the energy demand problem, but ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C13/00B22F3/12C22F1/16
CPCB22F3/12C22C13/00C22F1/16
Inventor 裴艳中李文郑灵浪
Owner TONGJI UNIV
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