Wide-temperature range thermoelectric generation device with multi-segmented structure and preparation method

A technology of thermoelectric power generation and segment structure, which is applied in the manufacture/processing of thermoelectric devices, thermoelectric devices, and thermoelectric devices that only use the Peltier or Seebeck effect, etc. It can solve the problems of interface thermal resistance and resistance increase, device reliability reduction, and thermal stress Concentration and other issues to achieve maximum energy conversion efficiency, high thermoelectric conversion efficiency, and strong integrity

Active Publication Date: 2018-02-09
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The combination of dissimilar materials adopts direct sintering or welding, and the electrodes are usually bonded by spring compression or conductive paste (Ag paste, etc.). This structure cannot meet the requirements of industrial applications in terms of strength, heat resistance and durability. Require
At the same time, the increase of heterogeneous interfaces in multi-segment structure wide temperature range devices directly leads to the increase of interface thermal resistance and electrical resistance, which affects the improvement of the actual conversion efficiency of the device.
In addition, the complex structure of multi-segment wide-temperature range thermoelectric devices will also cause thermal stress concentration, resulting in a decrease in device reliability.

Method used

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  • Wide-temperature range thermoelectric generation device with multi-segmented structure and preparation method
  • Wide-temperature range thermoelectric generation device with multi-segmented structure and preparation method
  • Wide-temperature range thermoelectric generation device with multi-segmented structure and preparation method

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Embodiment 1

[0077] refer to Image 6 It can be seen that Embodiment 1 according to the present invention will be described in detail. Choose CoSb in the middle temperature zone 3 The base skutterudite thermoelectric material, specifically, the P-type thermoelectric unit element 101A selects CeFe 3.9 mn 0.1 Sb 12 , N-type thermoelectric cell element 101B selects Yb 0.3 co 4 Sb 12 , and select the bismuth telluride thermoelectric material in the low temperature region, specifically, the P-type thermoelectric element 102A selects Bi 1.9 Sb 0.1 Te, N-type thermoelectric cell element 102B chooses Bi 2 Te 2.85 Se 0.05 , thus forming a thermoelectric power generation device 7 with a two-stage structure.

[0078] refer to Figure 5A with Figure 5B It can be seen that the high temperature end temperature is determined to be 850K according to the material properties, and the P-type CoSb 3 The temperature of the interface between the base cobalt ore thermoelectric cell element 101A an...

Embodiment 2

[0083] refer to Figure 9 It can be seen that Embodiment 2 according to the present invention will be described in detail. The Half-Heusler alloy material in the medium and high temperature area is selected, specifically, the P-type thermoelectric element 101A is selected from FeNb 0.8 Ti 0.2 Sb, N-type thermoelectric unit element 101B selects Hf 0.3 Zr 0.7 NiSn, choose CoSb in the middle temperature zone 3 The base skutterudite thermoelectric material, specifically, the P-type thermoelectric unit element 102A selects CeFe 3.9 mn 0.1 Sb 12 , N-type thermoelectric cell element 102B selects Yb 0.3 co 4 Sb 12 , select the bismuth telluride thermoelectric material in the low temperature region, specifically, the P-type thermoelectric element 103A selects Bi 1.9 Sb 0.1 Te 3 , N-type thermoelectric cell element 103B selects Bi 2 Te 2.85 Se 0.05 , thus forming a thermoelectric power generation device 7 with a three-stage structure.

[0084] refer to Figure 8A with ...

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Abstract

The invention relates to a wide-temperature range thermoelectric generation device with a multi-segmented structure and a preparation method thereof. The thermoelectric generation device is formed bycombining at least two types of thermoelectric materials with excellent thermoelectric properties in different temperature zones along the temperature gradient direction; high-temperature terminal electrodes and low-temperature terminal electrodes are used for being connected with P-type single thermoelectric elements and N-type single thermoelectric elements in a diversion manner; and barrier layers and connection layers are arranged between the high-temperature terminal electrodes or the low-temperature terminal electrodes and the corresponding single thermoelectric elements and between thesingle thermoelectric elements of two adjacent temperature segments. According to the wide-temperature range thermoelectric generation device with the multi-segmented structure and the preparation method thereof, maximization of the energy conversion efficiency of the whole temperature zone can be achieved, and the reliability of the thermoelectric generation device is high.

Description

technical field [0001] The invention relates to the technical field of thermoelectric conversion, in particular to a thermoelectric power generation device with a multi-stage structure and a wide temperature range and a preparation method thereof. Background technique [0002] Thermoelectric conversion technology has unique application advantages in the fields of special power supply, industrial waste heat utilization, high-precision temperature control and refrigeration. It is a technology that uses the Seebeck effect and Peltier effect of semiconductor materials to realize direct conversion of heat energy and electric energy. Because of its advantages of high reliability, green and pollution-free, and no mechanical transmission parts, it is expected to be widely used in the fields of industrial waste heat recovery and power generation from exhaust heat from automobiles and trucks. As a clean energy, it plays an important role in dealing with environmental pollution, allevi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/32H01L35/34
CPCH10N19/101H10N10/01
Inventor 唐云山廖锦城柏胜强夏绪贵张骐昊吴汀陈立东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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