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Protected thermoelectric element, thermoelectric device comprising same and forming method thereof

A thermoelectric element and protected technology, which is applied in the manufacture/processing of thermoelectric device components and thermoelectric devices, etc., can solve problems such as large differences in thermal expansion coefficients, reduced coating packaging effects, and imperfect connections

Active Publication Date: 2015-03-25
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in many cases, the reaction product of the metal layer used in this method and the matrix skutterudite material has poor compatibility with the matrix skutterudite material, or the reaction product cannot form a good bond with the oxide layer. The connection, or the connection between the metal layer and the oxide layer is not perfect, or the thermal expansion coefficient between the two coatings is very different, these problems will reduce the encapsulation effect of the coating

Method used

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  • Protected thermoelectric element, thermoelectric device comprising same and forming method thereof
  • Protected thermoelectric element, thermoelectric device comprising same and forming method thereof
  • Protected thermoelectric element, thermoelectric device comprising same and forming method thereof

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preparation example Construction

[0041] To this end, the present invention relates to a thermoelectric element with a multilayer structure protective layer and a method for preparing the same. The basic composition of thermoelectric elements with protective coating is skutterudite / (connecting transition layer structure / barrier layer structure) n (n=1~10). The skutterudite material can be based on CoSb 3 Base or Y x Fe y co (4-y) Sb 12 The skutterudite compound is the basic composition. On this basis, various skutterudite compounds are prepared by doping, filling, doping and filling or compounding. The materials connecting the transition layer structure include Mg, Al, Si, Ti, Various simple substances of V, Cr, Mn, Ni, Zn, Y, Zr, Nb, Mo, Pd, Sb, Ta, W or binary or multi-component alloys composed of two or more of the aforementioned components, Or their intermetallic compounds, and titanium alloys, NiCr alloys, and NiAl alloys containing other components, or one or more alloys formed by these elemental, ...

Embodiment 1

[0093] n-CoSb 3 The nominal composition of the matrix-filled skutterudite material is Yb 0.3 co 4 Sb 12 , process the sintered block material into 3×5×12mm 3 cuboid sample. Firstly, an Al-Cr alloy layer of about 5 μm is formed on the surrounding surface of the material by electron beam evaporation. The process parameters of electron beam evaporation are: arc voltage 4-8kV, working current 80-120mA, evaporation rate is about 38nm / min. On the Al-Cr layer, a layer of TiAlN coating with a thickness of about 3 μm was prepared by magnetron sputtering, the flow rate of nitrogen gas was 9ml / min, the flow rate of argon gas was 20ml / min, the deposition temperature was 240°C, and the sputtering power was 50W. The coated and encapsulated materials are placed in air at 550°C, kept warm for 1 hour, then taken out directly, and placed in air at room temperature to cool down to room temperature. This process acts as an accelerated thermal shock cycle. After 100 accelerated thermal sho...

Embodiment 2

[0095] p-CoSb 3 The nominal composition of the matrix-filled skutterudite material is CeFe 4 Sb 12 , process the sintered block material into 3×5×12mm 3 cuboid sample. First, a Ti layer of about 2 μm is formed on the surrounding surface of the material by magnetron sputtering. The diameter of the Ti target is 80mm, the thickness is 5mm, the sputtering gas is high-purity argon (the purity of Ar is 99.999%), and the flow rate of argon is 15mL / min. During coating, the back vacuum of the system is 10Pa, and the working air pressure is 0.2Pa. The sample temperature is normal temperature (20° C.), the sputtering power is 60 W, and the film deposition rate is about 20 nm / min. Then, a nickel-chromium-aluminum-yttrium (NiCrAlY) layer of about 3 μm is formed on the Ti layer by magnetron sputtering, the sputtering power is 2.1-2.4 kW, the argon gas pressure is 0.2 Pa, and the substrate temperature is 250° C. Finally, a layer of chromium silicide with a thickness of 2 μm was evapora...

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Abstract

The invention relates to a protected thermoelectric element, a thermoelectric device comprising the protected thermoelectric element and a forming method of the protected thermoelectric element. The protected thermoelectric element comprises a thermoelectric element body containing a thermoelectric material and a composite protective layer arranged on the thermoelectric element body, wherein the composite protective layer comprises one or more composite units, and each composite unit is composed of a connection transition layer structure and a barrier layer structure; each connection transition layer structure comprises one or more of a metal layer, a metal alloy layer and an intermetallic compound layer; each barrier layer structure comprises one or more of an oxide layer, a nitride layer, a carbide layer, a silicide layer, a silicate layer, an alloy layer and an oxide glass layer. The invention further provides the thermoelectric device comprising the protected thermoelectric element and the forming method of the protected thermoelectric element. The durability and the use reliability of the thermoelectric element and the corresponding device are improved, and the conversion efficiency of the thermoelectric device on a long-time service condition is improved compared with a thermoelectric device not provided with a coating.

Description

technical field [0001] The invention relates to a thermoelectric material, in particular to a multilayer protective coating of the thermoelectric material, a thermoelectric element containing the thermoelectric material, a corresponding device and a preparation method thereof. Background technique [0002] Thermoelectric power generation is a power generation technology that uses the Seebeck effect of semiconductor thermoelectric materials to directly convert thermal energy into electrical energy. The thermoelectric power generation system has the advantages of compact structure, reliable performance and good mobility. Since there are no running parts, it has no noise, no wear, no leakage during operation, and is an environmentally friendly green energy technology, suitable for recycling with low energy density, in the fields of automobile exhaust waste heat and industrial waste heat recovery and space applications, etc. All have broad application prospects. [0003] CoSb ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/02H01L35/34H10N10/80H10N10/01
Inventor 夏绪贵陈立东李小亚黄向阳唐云山廖锦城顾明何琳
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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