Construction method of high-performance hybrid photoelectric detector and regulation and control strategy thereof

A photodetector and hybrid technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as inapplicability and easy decomposition, and achieve the effect of effective photoelectric performance, good energy band matching, and avoiding decomposition.

Active Publication Date: 2019-04-16
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

However, because all-inorganic perovskites are prone to decomposition when exposed to water and oxygen...

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  • Construction method of high-performance hybrid photoelectric detector and regulation and control strategy thereof
  • Construction method of high-performance hybrid photoelectric detector and regulation and control strategy thereof
  • Construction method of high-performance hybrid photoelectric detector and regulation and control strategy thereof

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Embodiment 1

[0036] In the present invention based on CsPbBr 3 Nanocrystalline / monolayer MoS 2 A method for preparing a heterojunction hybrid photodetector mainly includes the following steps:

[0037] (1) Based on pure MoS 2 Fabrication of photodetectors

[0038] 1) First, provide a substrate, such as SiO 2 (300nm) / Si substrate, the size of the substrate can be 10mm×13mm, placed on the silicon wafer cleaning rack, ultrasonicated for 15 minutes in the order of acetone, alcohol, deionized water, and alcohol, and then dried with nitrogen gas for later use.

[0039] 2) 10mg MoO 3 Sprinkle the powder evenly on the quartz boat, then place the cleaned substrate upside down and parallel on the quartz boat, put the boat into the quartz tube, pour 100mg of sulfur powder into the small boat with both ends closed, put it into the quartz tube, Two quartz boats are respectively placed in the central region of the two temperature zones of the tube furnace (the tube furnace has at least two temperat...

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Abstract

The invention belongs to the field of nano materials and devices, discloses a construction method of a high-performance hybrid photoelectric detector and a regulation and control strategy thereof, andfurther discloses a high-performance hybrid photoelectric detector based on all-inorganic lead halide perovskite nanocrystals. The high-performance hybrid photoelectric detector comprises a single MoS2 layer and a CsPbX3 (X = Cl, Br, I) perovskite nanocrystal layer, wherein the single MoS2 layer is a 2D material, the CsPbX3 nanocrystal layer is a 0D material, and the single MoS2 layer and the CsPbX3 nanocrystal layer are compounded by constructing Van der Waals heterojunction. According to the invention, through exploration and improvement of key materials used for forming heterojunctions bycooperating with single-layer MoS2 and different process steps adopted by the characteristic factors of the key materials, the performance-adjustable/optimized hybrid photoelectric detector is realized. In essence, due to effective control on the light capture capability of the perovskite nanocrystal layer and exciton separation and charge transfer of photon-generated carriers at the 0D perovskitenanocrystal/2D single-layer MoS2 heterojunction interface, the light response performance of the hybrid photoelectric detector is directly influenced.

Description

technical field [0001] The invention belongs to the field of nanomaterials and devices, and more specifically relates to a method for constructing a high-performance hybrid photodetector and its control strategy, which can construct a high-performance hybrid photodetector based on all-inorganic lead halide perovskite nanocrystals. Type photodetector, the device uses semiconductor nanomaterials of different dimensions to realize the construction of heterojunctions, and by controlling the characteristics of perovskite nanocrystals, it can realize effective modulation and optimization of performance, so that the device can obtain excellent photodetection performance. Background technique [0002] MoS 2 As a representative of transition metal dichalcogenides (TMDs) semiconductor materials, it has high electron mobility and high switch ratio, and is a good channel material; single-layer molybdenum sulfide (that is, according to S-Mo-S Form two layers of S atoms and one layer of ...

Claims

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Application Information

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IPC IPC(8): H01L31/0336H01L31/113H01L31/18
CPCH01L31/0336H01L31/113H01L31/18Y02P70/50
Inventor 高义华李露颖沈少立康喆章楼文
Owner HUAZHONG UNIV OF SCI & TECH
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