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Construction method and control strategy of a high-performance hybrid photodetector

A photodetector and hybrid technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as inapplicability and easy decomposition, and achieve the effect of effective photoelectric performance, good energy band matching, and avoiding decomposition.

Active Publication Date: 2020-07-10
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because all-inorganic perovskites are prone to decomposition when exposed to water and oxygen, the traditional method of transferring molybdenum sulfide to perovskite film substrates is not applicable.

Method used

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  • Construction method and control strategy of a high-performance hybrid photodetector
  • Construction method and control strategy of a high-performance hybrid photodetector
  • Construction method and control strategy of a high-performance hybrid photodetector

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Embodiment 1

[0036] Based on CsPbBr in the present invention 3 Nanocrystalline / single layer MoS 2 The preparation method of heterojunction hybrid photodetector mainly includes the following steps:

[0037] (1) Based on pure MoS 2 Preparation of photodetector

[0038] 1) First, provide a substrate, such as SiO 2 (300nm) / Si substrate, the size of the substrate can be 10mm×13mm, placed on a silicon wafer cleaning rack, sonicated for 15 minutes in the order of acetone, alcohol, deionized water, and alcohol, and then dried with nitrogen for use.

[0039] 2) Add 10mg MoO 3 Sprinkle the powder evenly on the quartz boat, then place the cleaned substrate upside down on the quartz boat in parallel, put the boat into the quartz tube, pour 100mg of sulfur powder into the boat with closed ends, and put it into the quartz tube. Place the two quartz boats in the central area of ​​the two temperature zones of the tube furnace (the tube furnace has at least two temperature zones), the quartz boat that puts sulfur...

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Abstract

The invention belongs to the field of nano materials and devices, discloses a construction method of a high-performance hybrid photoelectric detector and a regulation and control strategy thereof, andfurther discloses a high-performance hybrid photoelectric detector based on all-inorganic lead halide perovskite nanocrystals. The high-performance hybrid photoelectric detector comprises a single MoS2 layer and a CsPbX3 (X = Cl, Br, I) perovskite nanocrystal layer, wherein the single MoS2 layer is a 2D material, the CsPbX3 nanocrystal layer is a 0D material, and the single MoS2 layer and the CsPbX3 nanocrystal layer are compounded by constructing Van der Waals heterojunction. According to the invention, through exploration and improvement of key materials used for forming heterojunctions bycooperating with single-layer MoS2 and different process steps adopted by the characteristic factors of the key materials, the performance-adjustable / optimized hybrid photoelectric detector is realized. In essence, due to effective control on the light capture capability of the perovskite nanocrystal layer and exciton separation and charge transfer of photon-generated carriers at the 0D perovskitenanocrystal / 2D single-layer MoS2 heterojunction interface, the light response performance of the hybrid photoelectric detector is directly influenced.

Description

Technical field [0001] The invention belongs to the field of nanomaterials and devices, and more specifically, relates to a method for constructing a high-performance hybrid photodetector and its control strategy, which can construct a high-performance hybrid based on all-inorganic lead halide perovskite nanocrystals This type of photodetector uses semiconductor nanomaterials of different dimensions to achieve heterostructure construction, and can achieve effective modulation and optimization of performance by controlling the properties of perovskite nanocrystals, so that the device can obtain excellent photodetection performance. Background technique [0002] MoS 2 As a representative of transition metal chalcogenides (TMDs) semiconductor materials, it has high electron mobility, extremely high switching ratio, and is a good channel material; a single layer of molybdenum sulfide (ie, S-Mo-S The formally arranged two layers of S atoms and one layer of Mo atoms) are direct band ga...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0336H01L31/113H01L31/18
CPCH01L31/0336H01L31/113H01L31/18Y02P70/50
Inventor 高义华李露颖沈少立康喆章楼文
Owner HUAZHONG UNIV OF SCI & TECH
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