Electrostatic atomization chemical vapor deposition gallium oxide film system

A technology of chemical vapor deposition and electrostatic atomization, which is applied in the field of material growth of chemical vapor deposition, and can solve the problems of epitaxial growth of various crystalline gallium oxide films, etc.

Pending Publication Date: 2020-12-22
TIANJIN POLYTECHNIC UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the current semiconductor material film deposition method is used for the epitaxial growth of various crystalline galli

Method used

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  • Electrostatic atomization chemical vapor deposition gallium oxide film system

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Embodiment 1

[0020] Example 1: Epitaxial α-phase gallium oxide on a glass substrate

[0021] 1. Substrate cleaning

[0022] Specifically, substrate cleaning includes the following steps:

[0023] Put the glass substrate into an ultrasonic cleaner containing cleaning solution, and ultrasonically clean it for 1 min.

[0024] Take out the glass substrate and use nitrogen gas to blow dry the residual cleaning solution on the surface of the glass substrate.

[0025] 2. Select a suitable quartz base according to the size of the substrate, place the glass substrate horizontally on the glass base, and then place it on the bottom of the reaction chamber.

[0026] 3. Growth of α-phase gallium oxide epitaxial layer

[0027] Specifically, the growth of the α-phase gallium oxide epitaxial layer includes the following steps:

[0028] Use nitrogen to evacuate the residual gas in the reaction chamber.

[0029] Reaction chamber temperature setting and preheating, the reaction chamber temperature is se...

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Abstract

The invention discloses an electrostatic atomization chemical vapor deposition gallium oxide film system, which belongs to the field of chemical vapor deposition material growth, and mainly solves theproblems of droplet particle size and motion control in the process of atomized vapor deposition of a gallium oxide film. The electrostatic atomization chemical vapor deposition method comprises thefollowing steps of carrying out electrostatic atomization on a gallium salt solution as a gallium source, and carrying out chemical reaction in a reaction cavity, using a loading support part in a reaction cavity as a growth area, transporting a gallium salt aqueous solution by carrier gas after electrostatic atomization, mixing with reaction gas and then transporting to the reaction cavity, and conducting a reaction in the growth area. The whole reaction cavity is of a vertical structure, a heating device is arranged on the periphery of the reaction cavity to provide required heat for reaction, a waste gas purification treatment device is arranged at the output position of the tail end of the reaction cavity, and reacted tail gas is treated by the waste gas purification treatment device.

Description

technical field [0001] The invention belongs to the field of chemical vapor deposition material growth, and relates to a chemical vapor deposition material growth method, in particular to a chemical vapor deposition gallium oxide thin film method. Background technique [0002] In recent years, research on gallium oxide materials has developed rapidly and has attracted more and more attention. As a new third-generation semiconductor material, the band gap of gallium oxide is 4.5-4.9eV, which is much higher than that of other third-generation semiconductor materials. The corresponding breakdown voltage of gallium oxide material is as high as the theoretical value of 8MV / cm. Gallium oxide material also has The on-resistance is small, the Baliga quality factor is high, the absorption cut-off edge is shorter, the growth cost is lower, and the physical and chemical properties are stable. It has broad application prospects in the application of high-voltage, high-power devices and...

Claims

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Application Information

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IPC IPC(8): C30B25/08C30B25/16C30B28/14C30B29/16
CPCC30B25/08C30B25/16C30B28/14C30B29/16
Inventor 宁平凡李雄杰牛萍娟韩丽丽杨邻峰韩抒真
Owner TIANJIN POLYTECHNIC UNIV
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