The invention belongs to the field of electronic functional materials and devices, and particularly relates to a lead
scandium tantalate thin film with
high energy storage performance and high electrocaloric performance and a preparation method of the lead
scandium tantalate thin film. The lead
scandium tantalate thin film is composed of a substrate, a ferroelectric thin film layer and a top
electrode, and the
chemical formula of the thin film is PbSc0. 5Ta0. 5O3 (PST). The preparation method is a
sol-
gel method,
scandium nitrate,
lead acetate and ethyoxyl
tantalum are used as precursor raw materials,
ethylene glycol
monomethyl ether is used as a
solvent, concentrated
nitric acid is used for regulating the pH value,
ethanolamine is used as a stabilizer, and the PST film is obtained after aging, glue homogenizing,
drying,
pyrolysis and layer-by-layer annealing. Compared with other preparation methods, the preparation process has the advantages of being simple, low in cost, high in production efficiency and the like. The
energy storage density of the lead scandium tantalate thin film can reach 40.4 J / cm < 3 > in a medium
electric field, and the
energy storage efficiency exceeds 71.8%. The adiabatic temperature change of the lead scandium tantalate thin film in a low
electric field can reach 4.75 K, and the lead scandium tantalate thin film has high temperature stability. The
high energy storage characteristic of the lead scandium tantalate thin film can provide low-loss
capacitance for a pulse power
amplifier, a
base station energy storage unit and the like, the high
electrocaloric effect can provide a
solid-state
refrigeration solution for the
heat management field of electronic devices such as chips and the like, and in addition, a new generation of multifunctional
integrated devices are expected to be developed by utilizing the synergistic effect of energy storage and
heat management of the lead scandium tantalate thin film.