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Electrocaloric effect refrigeration composite thick film material

A technology of electric card effect and thick film, which is applied in the field of electric card effect refrigeration composite thick film materials and antiferroelectric thick film refrigeration, and can solve problems such as dead layers

Active Publication Date: 2015-04-22
INNER MONGOLIA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the antiferroelectric thick film prepared by the solution-gel method is prone to "dead layer" phenomenon, so it is urgent to develop a method to solve the "dead layer" phenomenon in order to improve the cooling effect of antiferroelectric thick film

Method used

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  • Electrocaloric effect refrigeration composite thick film material
  • Electrocaloric effect refrigeration composite thick film material
  • Electrocaloric effect refrigeration composite thick film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] 1. Choose LaNiO as the bottom electrode 3 / Si electrode;

[0050] 2. Pb 0.97 La 0.02 (Zr0.57 sn 0.38 Ti 0.05 )O 3 Preparation of antiferroelectric composite thick film

[0051] 1) SrTiO 3 Precursor Solution Preparation

[0052] Strontium acetate and tetra-n-butyl titanate are used as raw materials, ethylene glycol methyl ether and acetylacetone are used as solvent and chelating agent respectively, and glacial acetic acid is used as catalyst. Strontium acetate [Sr(OOCCH 3 ) 3 ·H 2 O] dissolved in ethylene glycol methyl ether, add acetic acid and acetylacetone, stir at room temperature for 20 minutes, add tetra-n-butyl titanate [Ti(OC 4 h 9 ) 4 )], the molar ratio is: strontium acetate: tetra-n-butyl titanate = 1:1, ethylene glycol methyl ether: glacial acetic acid: tetra-n-butyl titanate: acetylacetone = 1:1:1:0.5, room temperature Stir for 30 minutes to get stable SrTiO 3 Precursor solution, the molar concentration is controlled at 0.02mol / L, and it is us...

Embodiment 2

[0064] 1. Choose LaNiO as the bottom electrode 3 / Si electrode;

[0065] 2. Pb 0.91 La 0.06 (Zr 0。95 Ti 0.05 )O 3 Preparation of antiferroelectric composite thick film

[0066] 1) SrTiO 3 Precursor Solution Preparation

[0067] Strontium acetate and tetra-n-butyl titanate are used as raw materials, ethylene glycol methyl ether and acetylacetone are used as solvent and chelating agent respectively, and glacial acetic acid is used as catalyst. Strontium acetate [Sr(OOCCH 3 ) 3 ·H 2 O] dissolved in ethylene glycol methyl ether, add acetic acid and acetylacetone, stir at room temperature for 30 minutes, add tetra-n-butyl titanate [Ti(OC 4 h 9 ) 4 )], the molar ratio is: strontium acetate: tetra-n-butyl titanate = 1: 1, ethylene glycol methyl ether: glacial acetic acid: tetra-n-butyl titanate: acetylacetone = 0.9:0.5:1:0.6, room temperature Stir for 40 minutes to get stable SrTiO 3 Precursor solution, the molar concentration is controlled at 0.2mol / L, and it is used ...

Embodiment 3

[0079] 1. Choose LaNiO as the bottom electrode 3 / Si electrode;

[0080] 2. Pb(Zr 0。98 Ti 0.02 )O 3 Preparation of antiferroelectric composite thick film

[0081] 1) SrTiO 3 Precursor Solution Preparation

[0082] Strontium acetate and tetra-n-butyl titanate are used as raw materials, ethylene glycol methyl ether and acetylacetone are used as solvent and chelating agent respectively, and glacial acetic acid is used as catalyst. Strontium acetate [Sr(OOCCH 3 ) 3 ·H 2 O] was dissolved in ethylene glycol methyl ether, added acetic acid and acetylacetone, stirred at room temperature for 40 minutes, added tetra-n-butyl titanate [Ti(OC 4 h 9 ) 4 )], the molar ratio is: strontium acetate: tetra-n-butyl titanate = 1: 1, ethylene glycol methyl ether: glacial acetic acid: tetra-n-butyl titanate: acetylacetone = 0.8:0.3:1:0.3, room temperature Stir for 60 minutes to get stable SrTiO 3 Precursor solution, the molar concentration is controlled at 0.05mol / L, and it is used afte...

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Abstract

The invention relates to an electrocaloric effect refrigeration composite thick film material. The composite thick film material comprises a SrTiO3 buffer layer and a (Pb1-3z / 2Laz)(Zr1-x-ySnxTiy)O3 anti-ferroelectric thick film layer, wherein 0<=x<=0.45, 0<=y<=0.10, 0<=z<=0.06, and the SrTiO3 buffer layer is located between a substrate and the (Pb1-3z / 2Laz)(Zr1-x-ySnxTiy)O3 anti-ferroelectric thick film layer. The composite thick film material has a high dielectric constant and high refrigeration efficiency and energy conversion efficiency and is suitable for development of micro-refrigerators with high refrigeration efficiency and energy conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of miniature refrigerators, in particular to an antiferroelectric thick-film refrigeration technology, in particular to a composite thick-film material for electrocard effect refrigeration. Background technique [0002] With the rapid development of micro-electromechanical systems and information technology, micro-electromechanical system devices such as micro-actuators and micro-displacers are in the process of further miniaturization and integration. The contradiction between energy density is becoming more and more prominent, and there is an urgent need for a micro-cooling system to locally cool the device. Traditional cooling methods, such as CPU fans, heat exchangers, etc., are relatively independent of the components to be cooled. There is a certain thermal resistance between the two during cooling operation, which is not conducive to the integration and efficient cooling of micro-electromechanical sys...

Claims

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Application Information

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IPC IPC(8): H01L35/14H01L35/34
Inventor 郝喜红赵烨张利文李晓伟安胜利
Owner INNER MONGOLIA UNIV OF SCI & TECH
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