Preparation method of film for regulating and controlling electrocaloric performance through substrate

A technology of substrate and thin film is applied in the field of preparation of thin films for regulating electric card performance through substrates, and achieves the effects of high purity, convenient and quick preparation technology, and high electric field breakdown strength

Pending Publication Date: 2020-05-08
GUANGXI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the wide range of applications of ferroelectric thin films, different applications put forward different requirements for them. It is difficult for existing

Method used

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  • Preparation method of film for regulating and controlling electrocaloric performance through substrate
  • Preparation method of film for regulating and controlling electrocaloric performance through substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) The raw material Ni(CH 3 COO) 2 , La(NO 3 ) 3 Dissolve in a mixed solution of glacial acetic acid, water and formamide at room temperature, and then place the solution for 20 hours to obtain LaNiO with a concentration of 0.3M. 3 Precursor solution

[0027] (2) The LaNiO obtained in step (1) 3 The precursor solution was spin-coated on Pt(111) / TiO using a homogenizer at 4000rpm for 30s x / SiO 2 / Si(100) substrate to obtain the first wet film;

[0028] (3) The first wet film prepared in step (2) was first dried at 180°C for 3 minutes, then pyrolyzed at 450°C for 10 minutes, and finally annealed at 700°C in air atmosphere for 5 minutes. Get a layer of LaNiO 3 film;

[0029] (4) Repeat step (2) and step (3) 6 times to obtain LaNiO with 6 layers 3 LaNiO 3 / Pt(111) / TiO x / SiO 2 / Si(100) composite substrate;

[0030] (5) Pb(CH 3 COO) 3 , Ba(CH 3 COO) 2 And C 6 H 9 O 6 La·xH 2 O was dissolved in the first mixed liquid of glacial acetic acid and deionized water at 120℃, and then Zr(O...

Embodiment 2

[0035] (1) The raw material Ni(CH 3 COO) 2 , La(NO 3 ) 3 Dissolve in a mixed solution of glacial acetic acid, water and formamide at room temperature, and then let the solution stand for 25h, and finally get LaNiO with a concentration of 0.3M 3 Precursor solution

[0036] (2) The LaNiO obtained in step (1) 3 The precursor solution was spin-coated on the n-type GaN substrate using a homogenizer at 5000 rpm for 40 seconds to obtain the first wet film;

[0037] (3) The first wet film produced in step (2) was first dried at 200°C for 4 minutes, then pyrolyzed at 500°C for 12 minutes, and finally annealed at 750°C in air atmosphere for 8 minutes. Get a layer of LaNiO 3 film;

[0038] (4) Repeat step (2) and step (3) 6 times to obtain LaNiO with 6 layers 3 LaNiO 3 / n-type GaN composite substrate;

[0039] (5) Pb(CH 3 COO) 3 , Ba(CH 3 COO) 2 And C 6 H 9 O 6 La·xH 2 O was dissolved in the first mixed liquid of glacial acetic acid and deionized water at 120℃, and then Zr(OC 3 H 7 ) 4 Dissolve ...

Embodiment 3

[0044] (1) The raw material Ni(CH 3 COO) 2 , La(NO 3 ) 3 Dissolve in a mixed solution of glacial acetic acid, water and formamide at room temperature, and then place the solution for 30 hours to obtain LaNiO with a concentration of 0.3M. 3 Precursor solution

[0045] (2) The LaNiO obtained in step (1) 3 The precursor solution was spin-coated on the p-type GaN substrate using a homogenizer at 6000 rpm for 60 seconds to obtain the first wet film;

[0046] (3) The first wet film prepared in step (2) was first dried at 250°C for 5 minutes, then pyrolyzed at 600°C for 15 minutes, and finally annealed at 800°C in air atmosphere for 10 minutes. Get a layer of LaNiO 3 film;

[0047] (4) Repeat step (2) and step (3) 6 times to obtain LaNiO with 6 layers 3 LaNiO 3 / p-type GaN composite substrate;

[0048] (5) Pb(CH 3 COO) 3 , Ba(CH 3 COO) 2 And C 6 H 9 O 6 La·xH 2 O was dissolved in the first mixed liquid of glacial acetic acid and deionized water at 120℃, and then Zr(OC 3 H 7 ) 4 Dissolve in g...

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Abstract

The invention relates to the technical field of ferroelectric film preparation, in particular to a preparation method of a film for regulating and controlling electrocaloric performance through a substrate, and belongs to the technical field of chemical engineering. The method comprises the following steps: spin-coating a LaNiO3 precursor solution on the substrate to prepare a first wet film, andperforming drying, pyrolyzing and annealing to prepare a layer of LaNiO3 film; repeating the previous steps to prepare a composite substrate with multiple layers of LaNiO3/substrates; spin-coating thePb0.78Ba0.2La0.02ZrO3 precursor solution on a composite substrate to prepare a second wet film, and performing drying, pyrolyzing and annealing the second wet film to prepare a layer of Pb0.78Ba0.2La0.02ZrO3 film; and repeating the previous steps to prepare the multi-layer Pb0.78Ba0.2La0.02ZrO3 thin film. The invention further discloses a preparation method of the Pb0.78Ba0.2La0.02ZrO3 thin film.According to the method, the film with the advantages of high purity, good compactness, small average grain size, high electric field breakdown strength, high electrocaloric effect and the like can be obtained.

Description

Technical field [0001] The invention relates to the technical field of ferroelectric thin film preparation, in particular to a method for preparing a thin film for regulating and controlling electric card performance through a substrate, and belongs to the technical field of chemical engineering. Background technique [0002] With the development of electronics, information and control technology towards miniaturization and high integration, and the demand for rapid refrigeration in the high-tech field, the development of high-efficiency solid-state refrigeration technology has been put on the agenda. As a branch of piezoelectric materials, ferroelectric materials are excellent candidates due to their electrical characteristics under an applied electric field. At present, the research on the electric card effect of ferroelectric materials mainly focuses on the research field of ceramics and thin films based on Si-based semiconductors. For example, the research on Pb x Sr 1-x TiO ...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02483H01L21/02565H01L21/02628H01L21/02664
Inventor 彭彪林姜锦涛
Owner GUANGXI UNIV
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