InAs/GaSb buffer layer, silicon-based antimonide semiconductor material, preparation method of silicon-based antimonide semiconductor material, and component

A silicon-based antimonide and buffer layer technology, which is applied in the structural details of semiconductor lasers and other directions, can solve the problems of limiting the performance improvement of laser devices, many defects in the active area, and poor material quality.

Active Publication Date: 2021-04-20
湖南科莱特光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The lattice mismatch between the substrate and the epitaxial layer will lead to poor material quality and many defects in the active region, which will cause non-radiative recombination and limit the performance improvement of laser devices

Method used

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  • InAs/GaSb buffer layer, silicon-based antimonide semiconductor material, preparation method of silicon-based antimonide semiconductor material, and component
  • InAs/GaSb buffer layer, silicon-based antimonide semiconductor material, preparation method of silicon-based antimonide semiconductor material, and component
  • InAs/GaSb buffer layer, silicon-based antimonide semiconductor material, preparation method of silicon-based antimonide semiconductor material, and component

Examples

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Embodiment 1

[0046] This embodiment provides a method for preparing a GaSb / InAs buffer layer and a silicon-based antimonide semiconductor material, comprising the following steps:

[0047] (1) On a silicon substrate with an inclination angle, the inclination angle is 2.86°, and the step length is about 6nm. GaSb and InAs layers are grown sequentially to control their distribution on the steps. The coverage ratio of the steps is 1:1.

[0048] The growth parameters include: the substrate temperature is 400°C, and the III / V beam current ratio is 1:1.

[0049] (1)GaSb growth, and control the coverage of GaSb on the step with the inclined substrate: first grow 1ML thick GaSb on the substrate, control the migration time of GaSb on the substrate step to 0.5s, and the migration speed to 0.5ML / s. First, the Ga source and the Sb source are turned on, and the coverage of GaSb is observed by RHEED (High Energy Electron Diffraction). After 0.5s, the Ga source and the Sb source are turned off, and th...

Embodiment 2

[0068] This embodiment provides a method for preparing a GaSb / InAs buffer layer and a silicon-based antimonide semiconductor material, comprising the following steps:

[0069] (1) On a silicon substrate with an inclination angle, the inclination angle is 2.86°, and the step length is about 6nm. GaSb and InAs layers are grown sequentially to control their distribution on the steps. The coverage ratio on the steps is 1:1.

[0070] The growth parameters include: the substrate temperature is 450°C, and the III / V beam current ratio is 1:5.

[0071] (1)GaSb growth, and control the coverage of GaSb on the step with the inclined substrate: first grow 1ML thick GaSb on the substrate, control the migration time of GaSb on the substrate step to 0.5s, and the migration speed to 0.5ML / s. First, the Ga source and the Sb source are turned on, and the coverage of GaSb is observed by RHEED (High Energy Electron Diffraction). After 0.5s, the Ga source and the Sb source are turned off, and th...

Embodiment 3

[0087] This embodiment provides a method for preparing a GaSb / InAs buffer layer and a silicon-based antimonide semiconductor material, comprising the following steps:

[0088] (1) On a silicon substrate with an inclination angle, the inclination angle is 2.86°, and the step length is about 6nm. GaSb and InAs layers are grown sequentially to control their distribution on the steps. The coverage ratio on the steps is 1:1.

[0089] The growth parameters include: the substrate temperature is 550°C, and the III / V beam current ratio is 1:10.

[0090] (1)GaSb growth, and control the coverage of GaSb on the step with the inclined substrate: first grow 1ML thick GaSb on the substrate, control the migration time of GaSb on the substrate step to 0.5s, and the migration speed to 0.5ML / s. First, the Ga source and the Sb source are turned on, and the coverage of GaSb is observed by RHEED (High Energy Electron Diffraction). After 0.5s, the Ga source and the Sb source are turned off, and t...

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Abstract

The invention provides an InAs / GaSb buffer layer, a silicon-based antimonide semiconductor material, a preparation method of the silicon-based antimonide semiconductor material, and a component. The InAs / GaSb buffer layer comprises one or more basic buffer units, wherein each basic buffer unit comprises one or more basic unit layers, and each basic unit layer comprises one or more groups of GaSb parts and InAs parts which are alternately arranged. The silicon-based antimonide semiconductor material comprises a silicon substrate and a pure gallium antimony layer, where the InAs / GaSb buffer layer is arranged between the silicon substrate and the pure gallium antimony layer. The preparation method comprises the following steps: growing the GaSb parts and the InAs parts on the silicon substrate to obtain a plurality of the basic unit layers; and then growing the pure gallium antimony layer. Raw materials of the component comprise the InAs / GaSb buffer layer or the silicon-based antimonide semiconductor material. According to the InAs / GaSb buffer layer provided by the invention, lattice mismatch between silicon and GaSb can be reduced, so high-quality antimonide epitaxial growth is realized.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to an InAs / GaSb buffer layer, a silicon-based antimonide semiconductor material, a preparation method and components thereof. Background technique [0002] Driven by its own advantages and market demand, silicon-based optoelectronic technology has developed rapidly and has become the most promising technology field in today's information technology, which may bring about changes in the field of optoelectronics and microelectronics technology. However, as an indirect bandgap semiconductor, the light emission of silicon materials is a typical phonon-assisted low-probability process, and the luminous efficiency is low, making it difficult to obtain silicon-based active devices. Therefore, research on high-efficiency active optoelectronic devices on silicon substrates (combined with III-V materials or other new materials) occupies an important position in silicon-based optoelectro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02
Inventor 杜鹏
Owner 湖南科莱特光电有限公司
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