Preparation of AlN growth face composite substrate and nitride semiconductor device

Abstract

The invention discloses a preparation method for an AlN growth face composite substrate and a nitride semiconductor device, relates to a nitride semiconductor material, and provides a preparation method f an AlN growth face composite substrate for growing the nitride semiconductor material and a nitride semiconductor device. An AlN epitaxial layer grows on a substrate to obtain the AlN growth face composite substrate. The nitride semiconductor device is provided with the AlN growth face composite substrate, a transition layer and a nitride semiconductor device structural material layer. The transition layer grows on the AlN growth face composite substrate and consists of a nitride material AlxInyGa(1-x-y)N(x is more than 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1.) containing Al. The nitride semiconductor device structural material layer grows on the transition layer, comprises an n-shaped layer, luminescent and absorbing functional structural layers and a p-shaped layer, and contains the component of the AlxInyGa(1-x-y)N(x is more than 0 or equal to and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1.).

Description

technical field [0001] The invention relates to a nitride semiconductor material, in particular to a preparation method of an AlN growth plane composite substrate and a nitride semiconductor device prepared on the AlN growth plane composite substrate. Background technique [0002] Group III nitride semiconductor materials are the third generation developed rapidly after the first-generation element semiconductors silicon (Si) and germanium (Ge), the second-generation compound semiconductors gallium arsenide (GaAs), indium phosphide (InP), etc. A typical representative of semiconductor materials. Compared with other material systems, GaN has the advantages of wide direct bandgap, high critical breakdown voltage, high saturation drift velocity, high thermal conductivity, and high chemical and thermal stability. Group III nitride semiconductors include GaN, InN, AlN and their alloys. The band gap is continuously adjustable in the range of 0.7-6.28eV. It is an excellent materia...

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Problems solved by technology

[0003] At present, the key factor restricting the development of Group III nitride materials and devices is the lack of lattice-matched and reasonably priced epitaxial substrates. For example, there is a relatively large lattice mismatch between commonly used sapphire substrates and Group III nitrides. As a result, the crystal quality of the nitride epitaxial layer is not high, and the dislocation density is as high as 10 10 / cm 2 , which limits the performance of nitride devices; the lattice mismatch between silicon carbide substrate materials and group III nitrides is small, but the price is extremely expensive, which limits the wide application of devices

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